Kouji Sueoka

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Silicon single crystal, silicon wafer, and epitaxial wafer.
- Patent number 6,641,888
- Issue date Nov 4, 2003
- Sumitomo Mitsubishi Silicon Corporation
- Eiichi Asayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing silicon epitaxial wafer
- Patent number 6,599,816
- Issue date Jul 29, 2003
- Sumitomo Metal Industries, Ltd.
- Kouji Sueoka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Manufacturing method of high resistivity silicon single crystal
- Publication number 20050000410
- Publication date Jan 6, 2005
- Nobumitsu Takase
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20020142171
- Publication date Oct 3, 2002
- SUMITOMO METAL INDUSTRIES, LTD.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, silicon wafer, and epitaxial wafer
- Publication number 20020142170
- Publication date Oct 3, 2002
- SUMITOMO METAL INDUSTRIES, LTD.
- Eiichi Asayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing silicon epitaxial wafer
- Publication number 20010021574
- Publication date Sep 13, 2001
- Sumitomo Metal Industries, Ltd.
- Kouji Sueoka
- C30 - CRYSTAL GROWTH