Claims
- 1. A silicon single crystal suitable for production of an epitaxial wafer wherein the single crystal is grown with nitrogen doping at a concentration of 1×1012 atoms/cm3 or more and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3.
- 2. A silicon wafer, which is produced by slicing a silicon single crystal as described in claim 1.
- 3. An epitaxial wafer, which is produced without extrinsic gettering treatment, and in which an epitaxial layer is grown on a surface of a silicon wafer as described in claim 2.
- 4. An epitaxial wafer according to claim 3, which has an oxygen concentration of 12×1017 atoms/cm3 or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.
- 5. A silicon single crystal suitable for production of an epitaxial wafer wherein the single crystal is grown with nitrogen doping at a concentration of 1×1012 atoms/cm3 or more and boron doping at a concentration of 1×1017 atoms/cm3 or more.
- 6. A silicon wafer, which is produced by slicing a silicon single crystal as described in claim 5.
- 7. An epitaxial wafer, which is produced without extrinsic gettering treatment, in which an epitaxial layer is grown on a surface of a silicon wafer as described in claim 6.
- 8. An epitaxial wafer according to claim 7, which has an oxygen concentration of 12×1017 atoms/cm3 or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.
- 9. A silicon single crystal suitable for production of an epitaxial wafer wherein the single crystal is grown with nitrogen doping at a concentration of 1×1012 atoms/cm3 or more, carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and boron doping at a concentration of 1×1017 atoms/cm3 or more.
- 10. A silicon wafer, which is produced by slicing a silicon single crystal as described in claim 9.
- 11. An epitaxial wafer, which is produced without extrinsic gettering treatment, in which an epitaxial layer is grown on a surface of a silicon wafer as described in claim 10.
- 12. An epitaxial wafer, which is produced without extrinsic gettering treatment according to claim 7, which has an oxygen concentration of 12×1017 atoms/cm3 or more when the wafer is subjected to a device process carried out at 1100° C. or higher after epitaxial growth.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-083424 |
Mar 1999 |
JP |
|
Parent Case Info
This application is a division of prior application Ser. No. 09/362.216 filed Jul. 28, 1999 now abandoned, which is hereby incorporated by reference.
US Referenced Citations (10)
Number |
Name |
Date |
Kind |
4591409 |
Ziem et al. |
May 1986 |
A |
4637855 |
Witter et al. |
Jan 1987 |
A |
5841532 |
Yoshida et al. |
Nov 1998 |
A |
5935320 |
Graef et al. |
Aug 1999 |
A |
6059875 |
Kirkland et al. |
May 2000 |
A |
6077343 |
Iida et al. |
Jun 2000 |
A |
6090645 |
Hamada |
Jul 2000 |
A |
6117231 |
Fusegawa et al. |
Sep 2000 |
A |
6162708 |
Tamatsuka et al. |
Dec 2000 |
A |
6191009 |
Tamatsuka et al. |
Feb 2001 |
B1 |
Foreign Referenced Citations (17)
Number |
Date |
Country |
60-251190 |
Dec 1985 |
JP |
61-17495 |
Jan 1986 |
JP |
63-198334 |
Aug 1988 |
JP |
63-227026 |
Sep 1988 |
JP |
403003244 |
Jan 1991 |
JP |
3-50186 |
Mar 1991 |
JP |
405251358 |
Sep 1993 |
JP |
5-294780 |
Nov 1993 |
JP |
406104199 |
Apr 1994 |
JP |
406194199 |
Apr 1994 |
JP |
6-271399 |
Sep 1994 |
JP |
08-091993 |
Apr 1996 |
JP |
8-250506 |
Sep 1996 |
JP |
10-098047 |
Apr 1998 |
JP |
10-229093 |
Aug 1998 |
JP |
411130592 |
May 1999 |
JP |
11-189493 |
Jul 1999 |
JP |