Kuo-Chi Tu

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Embedded ferroelectric memory cell
- Patent number 12,322,429
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating semiconductor device comprising ferroelectric...
- Patent number 12,238,934
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structures pertaining to improved ferroelectric random-a...
- Patent number 12,171,104
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 12,167,611
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
FeRAM decoupling capacitor
- Patent number 12,114,509
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,082,421
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for efficiently waking up ferroelectric memory
- Patent number 12,057,154
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for enlarging the memory window and improving data retentio...
- Patent number 12,040,019
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fu-Chen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM bottom electrode
- Patent number 12,041,861
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
Information Patent Grant
Interconnect landing method for RRAM technology
- Patent number 11,889,705
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded ferroelectric memory cell
- Patent number 11,869,564
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,856,788
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching random access memory with asymmetric source and...
- Patent number 11,856,797
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin-Chieh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,849,588
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Fu-Chen Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 11,832,529
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
Information Patent Grant
Memory cell having a top electrode interconnect arranged laterally...
- Patent number 11,800,720
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
FeRAM MFM structure with selective electrode etch
- Patent number 11,785,777
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and method for manufacturing the same
- Patent number 11,751,401
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D RRAM cell structure for reducing forming and set voltages
- Patent number 11,751,406
- Issue date Sep 5, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Hsien Hsieh
- G11 - INFORMATION STORAGE
Information Patent Grant
RRAM cell structure with laterally offset BEVA/TEVA
- Patent number 11,723,292
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Yang Chang
Information Patent Grant
Method and structures pertaining to improved ferroelectric random-a...
- Patent number 11,723,213
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,706,930
- Issue date Jul 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for enlarging the memory window and improving data retentio...
- Patent number 11,682,456
- Issue date Jun 20, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wakeup-free ferroelectric memory device
- Patent number 11,594,632
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mickey Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method of forming the same
- Patent number 11,557,609
- Issue date Jan 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded ferroelectric memory cell
- Patent number 11,437,084
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic compatible RRAM structure and process
- Patent number 11,387,411
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,316,096
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM decoupling capacitor
- Patent number 11,296,099
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE INCLUDING MULTIPLICATE SOURCE LINES AND METHODS OF FO...
- Publication number 20250120097
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Sheng-Hung Shih
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR AND METHOD F...
- Publication number 20250072003
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE AND MANUFACTURING MET...
- Publication number 20250063956
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20250048647
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE
- Publication number 20240389350
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...
- Publication number 20240389340
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan-Chen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF VIA AND BOTTOM ELECTRODE FOR MEMORY CELL
- Publication number 20240379533
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC TUNNEL JUNCTION STRUCTURE WITH L-SHAPED SPACERS
- Publication number 20240381658
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERAM DECOUPLING CAPACITOR
- Publication number 20240373645
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240365561
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EFFICIENTLY WAKING UP FERROELECTRIC MEMORY
- Publication number 20240363155
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-A...
- Publication number 20240357833
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM BOTTOM ELECTRODE
- Publication number 20240324478
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Chen Chang
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240114698
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240074206
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fu-Chen CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
EMBEDDED FERROELECTRIC MEMORY CELL
- Publication number 20240071455
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH BLOCKING LAYER
- Publication number 20240040800
- Publication date Feb 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ISOLATION
- Publication number 20230389331
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230389324
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230371396
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
Information Patent Application
FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH
- Publication number 20230371263
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsiang Chang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230363176
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-A...
- Publication number 20230337440
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE
- Publication number 20230329001
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230309318
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ENLARGING THE MEMORY WINDOW AND IMPROVING DATA RETENTIO...
- Publication number 20230274780
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fu-Chen CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE WITH LEAKAGE BARRIER LAYERS
- Publication number 20230262991
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH A BARRIER LAYER
- Publication number 20230217842
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Chen Chang
Information Patent Application
WAKEUP-FREE FERROELECTRIC MEMORY DEVICE
- Publication number 20230197847
- Publication date Jun 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mickey Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-TYPE BEOL MEMORY CELL
- Publication number 20230157030
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Embedded ferroelectric memory cell

Method of fabricating semiconductor device comprising ferroelectric...

Method and structures pertaining to improved ferroelectric random-a...

FeRAM MFM structure with selective electrode etch

FeRAM decoupling capacitor

Semiconductor device and method for manufacturing the same

Method for efficiently waking up ferroelectric memory

Methods for enlarging the memory window and improving data retentio...

RRAM bottom electrode

Interconnect landing method for RRAM technology

Embedded ferroelectric memory cell

Semiconductor device and method of fabricating the same

Resistive switching random access memory with asymmetric source and...

Semiconductor device and method of forming the same

Memory device

Memory cell having a top electrode interconnect arranged laterally...

FeRAM MFM structure with selective electrode etch

Integrated circuit and method for manufacturing the same

3D RRAM cell structure for reducing forming and set voltages

RRAM cell structure with laterally offset BEVA/TEVA

Method and structures pertaining to improved ferroelectric random-a...

Semiconductor device and method for manufacturing the same

Methods for enlarging the memory window and improving data retentio...

Method for forming RRAM with a barrier layer

Wakeup-free ferroelectric memory device

Integrated circuit structure and method of forming the same

Embedded ferroelectric memory cell

Logic compatible RRAM structure and process

Memory device

FeRAM decoupling capacitor

Patents Applicationslast 30 patents

MEMORY DEVICE INCLUDING MULTIPLICATE SOURCE LINES AND METHODS OF FO...

SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR AND METHOD F...

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE AND MANUFACTURING MET...

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE

FERROELECTRIC TUNNEL JUNCTION WITH IMPROVED FERROELECTRIC RESPONSE...

INTEGRATION OF VIA AND BOTTOM ELECTRODE FOR MEMORY CELL

FERROELECTRIC TUNNEL JUNCTION STRUCTURE WITH L-SHAPED SPACERS

FERAM DECOUPLING CAPACITOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR EFFICIENTLY WAKING UP FERROELECTRIC MEMORY

METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-A...

RRAM BOTTOM ELECTRODE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

EMBEDDED FERROELECTRIC MEMORY CELL

FERROELECTRIC MEMORY DEVICE WITH BLOCKING LAYER

MEMORY CELL ISOLATION

FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME

MEMORY DEVICE

FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCH

INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-A...

MFM DEVICE WITH AN ENHANCED BOTTOM ELECTRODE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHODS FOR ENLARGING THE MEMORY WINDOW AND IMPROVING DATA RETENTIO...

FERROELECTRIC MEMORY DEVICE WITH LEAKAGE BARRIER LAYERS

RRAM WITH A BARRIER LAYER

WAKEUP-FREE FERROELECTRIC MEMORY DEVICE

TRENCH-TYPE BEOL MEMORY CELL