Kwanyong Lim

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Niskayuna, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Titanium silicide formation in a narrow source-drain contact
- Patent number 10,854,510
- Issue date Dec 1, 2020
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing risk of punch-through in FinFET semiconductor structure
- Patent number 9,847,333
- Issue date Dec 19, 2017
- GLOBALFOUNDRIES Inc.
- Kwanyong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium silicide formation in a narrow source-drain contact
- Patent number 9,779,987
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TITANIUM SILICIDE FORMATION IN A NARROW SOURCE-DRAIN CONTACT
- Publication number 20170372949
- Publication date Dec 28, 2017
- GLOBALFOUNDRIES INC.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING RISK OF PUNCH-THROUGH IN FINFET SEMICONDUCTOR STRUCTURE
- Publication number 20160268260
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CONTACTS FOR COMMONLY FABRICATED SEMICONDUCTOR DEVICES USING...
- Publication number 20160049401
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TITANIUM SILICIDE FORMATION IN A NARROW SOURCE-DRAIN CONTACT
- Publication number 20150380304
- Publication date Dec 31, 2015
- GLOBALFOUNDRIES INC.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS