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Kwong-Jr Tsai
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Chung-Hsung, TW
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last 30 patents
Information
Patent Grant
Method for fabricating a low resistance Poly-Si/metal gate
Patent number
6,277,719
Issue date
Aug 21, 2001
Vanguard International Semiconductor Corporation
Jin-Dong Chern
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to manufacture metal gate of integrated circuits
Patent number
6,107,171
Issue date
Aug 22, 2000
Vanguard International Semiconductor Corporation
Kwong-Jr Tsai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma-enhanced chemical vapor deposited SIO.sub.2 /SI.sub.3 N.sub....
Patent number
6,017,614
Issue date
Jan 25, 2000
Vanguard International Semiconductor Corporation
Kwong-Jr Tsai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Plasma treatment method for PECVD silicon nitride films for improve...
Patent number
5,962,344
Issue date
Oct 5, 1999
Vanguard International Semiconductor Corporation
Yeur-Luen Tu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a passivation layer for integrated circuits
Patent number
5,943,599
Issue date
Aug 24, 1999
Vanguard International Semiconductor Corporation
Liang-Gi Yao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating capacitor-under-bit line (CUB) dynamic rando...
Patent number
5,893,734
Issue date
Apr 13, 1999
Vanguard International Semiconductor Corporation
Erik S. Jeng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for making a plasma-enhanced chemical vapor deposited SiO.su...
Patent number
5,851,603
Issue date
Dec 22, 1998
Vanguard International Semiconductor Corporation
Kwong-Jr Tsai
H01 - BASIC ELECTRIC ELEMENTS