Laertis Economikos

Person

Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor comprising an air gap positioned adjacent a gate electrode
- Patent number 11,456,382
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of trench silicide source or drain contacts without gate...
- Patent number 11,443,982
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for a self-aligned gate cut on a semi...
- Patent number 10,998,422
- Issue date May 4, 2021
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut structures
- Patent number 10,937,786
- Issue date Mar 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical resistor adjacent inactive gate over trench isolation
- Patent number 10,923,469
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating gate separation structure for transistor devices
- Patent number 10,879,073
- Issue date Dec 29, 2020
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure with metal cap on cobalt layer and methods of forming...
- Patent number 10,790,363
- Issue date Sep 29, 2020
- GLOBALFOUNDRIES Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having insulating layers between gate and source/drain contacts
- Patent number 10,741,451
- Issue date Aug 11, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wraparound contact surrounding source/drain regions of integrated c...
- Patent number 10,741,656
- Issue date Aug 11, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated gate contact and cross-coupling contact formation
- Patent number 10,727,136
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut isolation formed as layer against sidewall of dummy gate m...
- Patent number 10,707,206
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Late gate cut using selective dielectric deposition
- Patent number 10,699,957
- Issue date Jun 30, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing finfet devices using narrow and wide gate c...
- Patent number 10,586,860
- Issue date Mar 10, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated single diffusion break
- Patent number 10,580,685
- Issue date Mar 3, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide spacer in a contact over active gate finFET and method of pro...
- Patent number 10,573,753
- Issue date Feb 25, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut method after source/drain metallization
- Patent number 10,566,201
- Issue date Feb 18, 2020
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for a self-aligned gate cut on a semi...
- Patent number 10,553,698
- Issue date Feb 4, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with self-aligned metal plugs and methods
- Patent number 10,553,486
- Issue date Feb 4, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal resistors integrated into poly-open-chemical-mechanical-polis...
- Patent number 10,546,853
- Issue date Jan 28, 2020
- GLOBALFOUNDRIES Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming replacement air gap
- Patent number 10,535,771
- Issue date Jan 14, 2020
- GLOBALFOUNDRIES Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performing concurrent diffusion break, gate and source/drain contac...
- Patent number 10,522,410
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using source/drain contact cap during gate cut
- Patent number 10,522,538
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor within single diffusion break, and related method
- Patent number 10,510,749
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures
- Patent number 10,510,613
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut in replacement metal gate process
- Patent number 10,504,798
- Issue date Dec 10, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor fins with different thickness gate dielectric
- Patent number 10,475,791
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor (FinFET) and method of production thereof
- Patent number 10,418,285
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intergrated circuit structure including single diffusion break abut...
- Patent number 10,388,652
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Yongiun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate contact structure positioned above an active region with air g...
- Patent number 10,388,747
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut in replacement metal gate process
- Patent number 10,373,873
- Issue date Aug 6, 2019
- GLOBALFOUNDRIES Inc.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMATION OF TRENCH SILICIDE SOURCE OR DRAIN CONTACTS WITHOUT GATE...
- Publication number 20220375788
- Publication date Nov 24, 2022
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION
- Publication number 20200227404
- Publication date Jul 16, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR A SELF-ALIGNED GATE CUT ON A SEMI...
- Publication number 20200185509
- Publication date Jun 11, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATE GATE CUT USING SELECTIVE DIELECTRIC DEPOSITION
- Publication number 20200168509
- Publication date May 28, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT ISOLATION FORMED AS LAYER AGAINST SIDEWALL OF DUMMY GATE M...
- Publication number 20200161296
- Publication date May 21, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED GATE CONTACT AND CROSS-COUPLING CONTACT FORMATION
- Publication number 20200152518
- Publication date May 14, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF TRENCH SILICIDE SOURCE OR DRAIN CONTACTS WITHOUT GATE...
- Publication number 20200152509
- Publication date May 14, 2020
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATING GATE SEPARATION STRUCTURE FOR TRANSISTOR DEVICES
- Publication number 20200135473
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HAVING INSULATING LAYERS BETWEEN GATE AND SOURCE/DRAIN CONTACTS
- Publication number 20200111713
- Publication date Apr 9, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT STRUCTURES
- Publication number 20200091143
- Publication date Mar 19, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE SPACER IN A CONTACT OVER ACTIVE GATE FINFET AND METHOD OF PRO...
- Publication number 20200083363
- Publication date Mar 12, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND CONTACT SURROUNDING SOURCE/DRAIN REGIONS OF INTEGRATED C...
- Publication number 20200075738
- Publication date Mar 5, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING AN AIR GAP POSITIONED ADJACENT A GATE ELECTRODE
- Publication number 20200066899
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM TO CONTROL GATE HEIGHT AND CAP THICK...
- Publication number 20200052106
- Publication date Feb 13, 2020
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC STRUCTURE WITH METAL CAP ON COBALT LAYER AND METHODS OF FORMING...
- Publication number 20200044034
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SINGLE DIFFUSION BREAK
- Publication number 20200035543
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES INC.
- Hui ZANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED METAL PLUGS AND METHODS
- Publication number 20200035555
- Publication date Jan 30, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING SOURCE/DRAIN CONTACT CAP DURING GATE CUT
- Publication number 20200020687
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL RESISTORS INTEGRATED INTO POLY-OPEN-CHEMICAL-MECHANICAL-POLIS...
- Publication number 20190393212
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING REPLACEMENT AIR GAP
- Publication number 20190393335
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED GATE-SOURCE/DRAIN METALLIZATION...
- Publication number 20190378722
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FINS WITH DIFFERENT THICKNESS GATE DIELECTRIC
- Publication number 20190371796
- Publication date Dec 5, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS HAVING DOUBLE SPACERS AT TOPS OF GATE CONDUCTORS
- Publication number 20190363174
- Publication date Nov 28, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...
- Publication number 20190341475
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AND TRIMMING GATE CUT STRUCTURE
- Publication number 20190341468
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMING CONCURRENT DIFFUSION BREAK, GATE AND SOURCE/DRAIN CONTAC...
- Publication number 20190326177
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR A SELF-ALIGNED GATE CUT ON A SEMI...
- Publication number 20190319112
- Publication date Oct 17, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS FORMED WITH SELF-ALIGNED CUTS
- Publication number 20190295898
- Publication date Sep 26, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT IN REPLACEMENT METAL GATE PROCESS
- Publication number 20190252268
- Publication date Aug 15, 2019
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES
- Publication number 20190229019
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS

Laertis Economikos

Person

Patents Grantslast 30 patents

Transistor comprising an air gap positioned adjacent a gate electrode

Formation of trench silicide source or drain contacts without gate...

Methods, apparatus and system for a self-aligned gate cut on a semi...

Gate cut structures

Vertical resistor adjacent inactive gate over trench isolation

Insulating gate separation structure for transistor devices

IC structure with metal cap on cobalt layer and methods of forming...

FinFET having insulating layers between gate and source/drain contacts

Wraparound contact surrounding source/drain regions of integrated c...

Integrated gate contact and cross-coupling contact formation

Gate cut isolation formed as layer against sidewall of dummy gate m...

Late gate cut using selective dielectric deposition

Method of manufacturing finfet devices using narrow and wide gate c...

Integrated single diffusion break

Oxide spacer in a contact over active gate finFET and method of pro...

Gate cut method after source/drain metallization

Methods, apparatus and system for a self-aligned gate cut on a semi...

Field effect transistors with self-aligned metal plugs and methods

Metal resistors integrated into poly-open-chemical-mechanical-polis...

Method for forming replacement air gap

Performing concurrent diffusion break, gate and source/drain contac...

Using source/drain contact cap during gate cut

Resistor within single diffusion break, and related method

Contact structures

Gate cut in replacement metal gate process

Transistor fins with different thickness gate dielectric

Fin field-effect transistor (FinFET) and method of production thereof

Intergrated circuit structure including single diffusion break abut...

Gate contact structure positioned above an active region with air g...

Gate cut in replacement metal gate process

Patents Applicationslast 30 patents

FORMATION OF TRENCH SILICIDE SOURCE OR DRAIN CONTACTS WITHOUT GATE...

VERTICAL RESISTOR ADJACENT INACTIVE GATE OVER TRENCH ISOLATION

METHODS, APPARATUS AND SYSTEM FOR A SELF-ALIGNED GATE CUT ON A SEMI...

LATE GATE CUT USING SELECTIVE DIELECTRIC DEPOSITION

GATE CUT ISOLATION FORMED AS LAYER AGAINST SIDEWALL OF DUMMY GATE M...

INTEGRATED GATE CONTACT AND CROSS-COUPLING CONTACT FORMATION

FORMATION OF TRENCH SILICIDE SOURCE OR DRAIN CONTACTS WITHOUT GATE...

INSULATING GATE SEPARATION STRUCTURE FOR TRANSISTOR DEVICES

FINFET HAVING INSULATING LAYERS BETWEEN GATE AND SOURCE/DRAIN CONTACTS

GATE CUT STRUCTURES

OXIDE SPACER IN A CONTACT OVER ACTIVE GATE FINFET AND METHOD OF PRO...

WRAPAROUND CONTACT SURROUNDING SOURCE/DRAIN REGIONS OF INTEGRATED C...

TRANSISTOR COMPRISING AN AIR GAP POSITIONED ADJACENT A GATE ELECTRODE

METHODS, APPARATUS, AND SYSTEM TO CONTROL GATE HEIGHT AND CAP THICK...

IC STRUCTURE WITH METAL CAP ON COBALT LAYER AND METHODS OF FORMING...

INTEGRATED SINGLE DIFFUSION BREAK

FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED METAL PLUGS AND METHODS

USING SOURCE/DRAIN CONTACT CAP DURING GATE CUT

METAL RESISTORS INTEGRATED INTO POLY-OPEN-CHEMICAL-MECHANICAL-POLIS...

METHOD FOR FORMING REPLACEMENT AIR GAP

SEMICONDUCTOR DEVICE WITH IMPROVED GATE-SOURCE/DRAIN METALLIZATION...

TRANSISTOR FINS WITH DIFFERENT THICKNESS GATE DIELECTRIC

TRANSISTORS HAVING DOUBLE SPACERS AT TOPS OF GATE CONDUCTORS

A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...

METHOD FOR FORMING AND TRIMMING GATE CUT STRUCTURE

PERFORMING CONCURRENT DIFFUSION BREAK, GATE AND SOURCE/DRAIN CONTAC...

METHODS, APPARATUS AND SYSTEM FOR A SELF-ALIGNED GATE CUT ON A SEMI...

CONTACTS FORMED WITH SELF-ALIGNED CUTS

GATE CUT IN REPLACEMENT METAL GATE PROCESS

CONTACT STRUCTURES