Larry A. Nesbit

Person

Williston, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal-oxide-semiconductor device structures with tailored dopant de...
- Patent number 7,994,575
- Issue date Aug 9, 2011
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a metal-oxide-semiconductor device structure
- Patent number 7,951,660
- Issue date May 31, 2011
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon nanotube conductor for trench capacitors
- Patent number 7,932,549
- Issue date Apr 26, 2011
- International Business Machines Corporation
- Steven J. Holmes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods and structures for promoting stable synthesis of carbon nan...
- Patent number 7,851,064
- Issue date Dec 14, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical carbon nanotube field effect transistors and arrays
- Patent number 7,829,883
- Issue date Nov 9, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of fabricating vertical carbon nanotube field effect transi...
- Patent number 7,820,502
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical nanotube semiconductor device structures and methods of fo...
- Patent number 7,691,720
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-lithographic imaging techniques and processes
- Patent number 7,585,614
- Issue date Sep 8, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation fill by liquid phase deposition of SiO2
- Patent number 7,525,156
- Issue date Apr 28, 2009
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating oxygen-implanted silicon on insulation type...
- Patent number 7,504,314
- Issue date Mar 17, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shrinking contact apertures through LPD oxide
- Patent number 7,393,779
- Issue date Jul 1, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structures for promoting stable synthesis of carbon nan...
- Patent number 7,374,793
- Issue date May 20, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors incorporating semiconducting nano...
- Patent number 7,329,567
- Issue date Feb 12, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation fill by liquid phase deposition of SiO2
- Patent number 7,273,794
- Issue date Sep 25, 2007
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming alternating phase shift masks having improved ph...
- Patent number 7,264,415
- Issue date Sep 4, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Process for oxide cap formation in semiconductor manufacturing
- Patent number 7,256,114
- Issue date Aug 14, 2007
- International Business Machines Corporation
- Steven J. Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-gate FETs (Field Effect Transistors)
- Patent number 7,250,347
- Issue date Jul 31, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Line mask defined active areas for 8F2 DRAM cells with folded bit l...
- Patent number 7,244,980
- Issue date Jul 17, 2007
- Infineon Technologies AG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistors incorporating semiconducting nano...
- Patent number 7,211,844
- Issue date May 1, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including dual damascene interconnections
- Patent number 7,187,085
- Issue date Mar 6, 2007
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inclusion of low-k dielectric material between bit lines
- Patent number 7,125,790
- Issue date Oct 24, 2006
- Infineon Technologies AG
- Kia Seng Low
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective synthesis of semiconducting carbon nanotubes
- Patent number 7,038,299
- Issue date May 2, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating phase mask built by additive film deposition
- Patent number 6,998,204
- Issue date Feb 14, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of forming FinFET gates without long etches
- Patent number 6,989,308
- Issue date Jan 24, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced cap layer erosion for borderless contacts
- Patent number 6,890,815
- Issue date May 10, 2005
- Infineon Technologies AG
- Johnathan Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for supporting a bond pad in a multilevel interconnect struc...
- Patent number 6,890,828
- Issue date May 10, 2005
- International Business Machines Corporation
- David Vaclav Horak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gas dielectric with support structure
- Patent number 6,875,685
- Issue date Apr 5, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and methods for process integration in vertical DRAM cell...
- Patent number 6,790,739
- Issue date Sep 14, 2004
- International Business Machines Corporation
- Rajeev Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming bitline contacts for a vertical DRA...
- Patent number 6,767,781
- Issue date Jul 27, 2004
- International Business Machines Corporation
- Larry A. Nesbit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing dual damascene interconnections and structure...
- Patent number 6,759,332
- Issue date Jul 6, 2004
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CARBON NANOTUBE CONDUCTOR FOR TRENCH CAPACITORS
- Publication number 20090014767
- Publication date Jan 15, 2009
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
VERTICAL NANOTUBE SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FO...
- Publication number 20080227264
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
- Publication number 20080197448
- Publication date Aug 21, 2008
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURES FOR PROMOTING STABLE SYNTHESIS OF CARBON NAN...
- Publication number 20080160312
- Publication date Jul 3, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS OF FABRICATING VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSI...
- Publication number 20080044954
- Publication date Feb 21, 2008
- International Business Machines Corporation
- Toshiharu Furukawa
- G11 - INFORMATION STORAGE
Information Patent Application
Design Structures Incorporating Shallow Trench Isolation Filled by...
- Publication number 20080040696
- Publication date Feb 14, 2008
- International Business Machines Corporation
- Mark Charles Hakey
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
- Publication number 20070228510
- Publication date Oct 4, 2007
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shrinking Contact Apertures Through LPD Oxide
- Publication number 20070099416
- Publication date May 3, 2007
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING OXYGEN-IMPLANTED SILICON ON INSULATION TYPE...
- Publication number 20060226480
- Publication date Oct 12, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-GATE FETs (FIELD EFFECT TRANSISTORS)
- Publication number 20060172496
- Publication date Aug 3, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR OXIDE CAP FORMATION IN SEMICONDUCTOR MANUFACTURING
- Publication number 20060166432
- Publication date Jul 27, 2006
- International Business Machines Corporation
- Steven John Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB-LITHOGRAPHIC IMAGING TECHNIQUES AND PROCESSES
- Publication number 20060060562
- Publication date Mar 23, 2006
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical field effect transistors incorporating semiconducting nano...
- Publication number 20050266627
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods for fabricating a metal-oxide-semiconductor device structur...
- Publication number 20050242378
- Publication date Nov 3, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming alternating phase shift masks having improved ph...
- Publication number 20050202322
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Method of forming FinFET gates without long etches
- Publication number 20050202607
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of fabricating vertical carbon nanotube field effect transi...
- Publication number 20050179029
- Publication date Aug 18, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- G11 - INFORMATION STORAGE
Information Patent Application
Line mask defined active areas for 8F2 dram cells with folded bit l...
- Publication number 20050176197
- Publication date Aug 11, 2005
- Infineon Technologies North America Corp.
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical nanotube semiconductor device structures and methods of fo...
- Publication number 20050167655
- Publication date Aug 4, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical field effect transistors incorporating semiconducting nano...
- Publication number 20050167740
- Publication date Aug 4, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Vertical Carbon Nanotube Field Effect Transistor
- Publication number 20050145838
- Publication date Jul 7, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods and structures for promoting stable synthesis of carbon nan...
- Publication number 20050129948
- Publication date Jun 16, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Shallow trench isolation fill by liquid phase deposition of SiO2
- Publication number 20050130387
- Publication date Jun 16, 2005
- International Business Machines Corporation
- Mark Charles Hakey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective synthesis of semiconducting carbon nanotubes
- Publication number 20050130341
- Publication date Jun 16, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Application
ALTERNATING PHASE MASK BUILT BY ADDITIVE FILM DEPOSITION
- Publication number 20050106472
- Publication date May 19, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Methods for fabricating a metal-oxide-semiconductor device structur...
- Publication number 20050098804
- Publication date May 12, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GAS DIELECTRIC WITH SUPPORT STRUCTURE
- Publication number 20050087875
- Publication date Apr 28, 2005
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inclusion of low-k dielectric material between bit lines
- Publication number 20050085096
- Publication date Apr 21, 2005
- Infineon Technologies North America Corp.
- Kia Seng Low
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS
- Publication number 20050051839
- Publication date Mar 10, 2005
- Johnathan Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for supporting a bond pad in a multilevel interconnect struc...
- Publication number 20040245637
- Publication date Dec 9, 2004
- International Business Machines Corporation
- David Vaclav Horak
- H01 - BASIC ELECTRIC ELEMENTS

Larry A. Nesbit

Person

Patents Grantslast 30 patents

Metal-oxide-semiconductor device structures with tailored dopant de...

Methods for fabricating a metal-oxide-semiconductor device structure

Carbon nanotube conductor for trench capacitors

Methods and structures for promoting stable synthesis of carbon nan...

Vertical carbon nanotube field effect transistors and arrays

Methods of fabricating vertical carbon nanotube field effect transi...

Vertical nanotube semiconductor device structures and methods of fo...

Sub-lithographic imaging techniques and processes

Shallow trench isolation fill by liquid phase deposition of SiO2

Method for fabricating oxygen-implanted silicon on insulation type...

Shrinking contact apertures through LPD oxide

Methods and structures for promoting stable synthesis of carbon nan...

Vertical field effect transistors incorporating semiconducting nano...

Shallow trench isolation fill by liquid phase deposition of SiO2

Methods of forming alternating phase shift masks having improved ph...

Process for oxide cap formation in semiconductor manufacturing

Double-gate FETs (Field Effect Transistors)

Line mask defined active areas for 8F2 DRAM cells with folded bit l...

Vertical field effect transistors incorporating semiconducting nano...

Semiconductor device including dual damascene interconnections

Inclusion of low-k dielectric material between bit lines

Selective synthesis of semiconducting carbon nanotubes

Alternating phase mask built by additive film deposition

Method of forming FinFET gates without long etches

Reduced cap layer erosion for borderless contacts

Method for supporting a bond pad in a multilevel interconnect struc...

Method of forming gas dielectric with support structure

Structure and methods for process integration in vertical DRAM cell...

Structure and method of forming bitline contacts for a vertical DRA...

Method for producing dual damascene interconnections and structure...

Patents Applicationslast 30 patents

CARBON NANOTUBE CONDUCTOR FOR TRENCH CAPACITORS

VERTICAL NANOTUBE SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FO...

SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2

METHODS AND STRUCTURES FOR PROMOTING STABLE SYNTHESIS OF CARBON NAN...

METHODS OF FABRICATING VERTICAL CARBON NANOTUBE FIELD EFFECT TRANSI...

Design Structures Incorporating Shallow Trench Isolation Filled by...

SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2

Shrinking Contact Apertures Through LPD Oxide

METHOD FOR FABRICATING OXYGEN-IMPLANTED SILICON ON INSULATION TYPE...

DOUBLE-GATE FETs (FIELD EFFECT TRANSISTORS)

PROCESS FOR OXIDE CAP FORMATION IN SEMICONDUCTOR MANUFACTURING

SUB-LITHOGRAPHIC IMAGING TECHNIQUES AND PROCESSES

Vertical field effect transistors incorporating semiconducting nano...

Methods for fabricating a metal-oxide-semiconductor device structur...

Methods of forming alternating phase shift masks having improved ph...

Method of forming FinFET gates without long etches

Methods of fabricating vertical carbon nanotube field effect transi...

Line mask defined active areas for 8F2 dram cells with folded bit l...

Vertical nanotube semiconductor device structures and methods of fo...

Vertical field effect transistors incorporating semiconducting nano...

Vertical Carbon Nanotube Field Effect Transistor

Methods and structures for promoting stable synthesis of carbon nan...

Shallow trench isolation fill by liquid phase deposition of SiO2

Selective synthesis of semiconducting carbon nanotubes

ALTERNATING PHASE MASK BUILT BY ADDITIVE FILM DEPOSITION

Methods for fabricating a metal-oxide-semiconductor device structur...

METHOD OF FORMING GAS DIELECTRIC WITH SUPPORT STRUCTURE

Inclusion of low-k dielectric material between bit lines

REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS

Method for supporting a bond pad in a multilevel interconnect struc...