Lawrence F. Wagner Jr.

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Fishkill, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Integrated circuits with reduced substrate capacitance
- Patent number 6,562,666
- Issue date May 13, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI FET design to reduce transient bipolar current
- Patent number 5,770,881
- Issue date Jun 23, 1998
- International Business Machines Coproration
- Mario M. A. Pelella
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical-gate CMOS compatible lateral bipolar transistor
- Patent number 5,446,312
- Issue date Aug 29, 1995
- International Business Machines Corporation
- Chang-Ming Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a novel vertical-gate CMOS compatible lateral bip...
- Patent number 5,371,022
- Issue date Dec 6, 1994
- International Business Machines Corporation
- Chang-Ming Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Novel vertical-gate CMOS compatible lateral bipolar transistor
- Patent number 5,341,023
- Issue date Aug 23, 1994
- International Business Machines Corporation
- Chang-Ming Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate controlled Schottky barrier diode
- Patent number 5,258,640
- Issue date Nov 2, 1993
- International Business Machines Corporation
- Chang-Ming Hsieh
- H01 - BASIC ELECTRIC ELEMENTS