Lee McCarthy

Person

Chapel Hill, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage III-nitride semiconductor devices
- Patent number 9,293,561
- Issue date Mar 22, 2016
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N device structures having a non-insulating substrate
- Patent number 9,257,547
- Issue date Feb 9, 2016
- Transphorm Inc.
- Nicholas Fichtenbaum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrolysis transistor
- Patent number 9,096,939
- Issue date Aug 4, 2015
- Transphorm, Inc.
- Umesh Mishra
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
High voltage III-nitride semiconductor devices
- Patent number 8,742,459
- Issue date Jun 3, 2014
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method using low temperature wafer bonding to fabricate transistors...
- Patent number 8,558,285
- Issue date Oct 15, 2013
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a direct wafer bonded optoelectronic device
- Patent number 8,334,151
- Issue date Dec 18, 2012
- The Regents of the University of California
- Akihiko Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectroni...
- Patent number 7,719,020
- Issue date May 18, 2010
- The Regents of the University of California
- Akihiko Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectr...
- Patent number 7,344,958
- Issue date Mar 18, 2008
- The Regents of the University of California
- Akihiko Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based FETs and HEMTs with reduced trapping and me...
- Patent number 6,586,781
- Issue date Jul 1, 2003
- Cree Lighting Company
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE III-NITRIDE SEMICONDUCTOR DEVICES
- Publication number 20140342512
- Publication date Nov 20, 2014
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compact electric appliance for providing gas for combustion
- Publication number 20130140189
- Publication date Jun 6, 2013
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
III-N DEVICE STRUCTURES HAVING A NON-INSULATING SUBSTRATE
- Publication number 20130062621
- Publication date Mar 14, 2013
- TRANSPHORM INC.
- Nicholas Fichtenbaum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS...
- Publication number 20110169050
- Publication date Jul 14, 2011
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage III-Nitride Semiconductor Devices
- Publication number 20100289067
- Publication date Nov 18, 2010
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
(Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONI...
- Publication number 20100187555
- Publication date Jul 29, 2010
- The Regents of the University of California
- Akihiko Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compact electric appliance for providing gas for combustion
- Publication number 20090145771
- Publication date Jun 11, 2009
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Compact electric appliance providing hydrogen injection for improve...
- Publication number 20090134041
- Publication date May 28, 2009
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LA...
- Publication number 20090085065
- Publication date Apr 2, 2009
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrolysis transistor
- Publication number 20080296173
- Publication date Dec 4, 2008
- Transphorm, Inc.
- Umesh Mishra
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS...
- Publication number 20080296617
- Publication date Dec 4, 2008
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE III-N FIELD EFFECT TRANSISTORS USING ION IMPLAN...
- Publication number 20080258150
- Publication date Oct 23, 2008
- The Regents of the University of California
- Lee S. McCarthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
(Al, Ga, In)N and ZnO direct wafer bonded structure for optoelectro...
- Publication number 20070001186
- Publication date Jan 4, 2007
- Akihiko Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for wafer bonding (Al, In, Ga)N and Zn(S, Se) for optoelectr...
- Publication number 20060009006
- Publication date Jan 12, 2006
- The Regents of the University of California
- Akihiko Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride based FETs and hemts with reduced trapping and me...
- Publication number 20010023964
- Publication date Sep 27, 2001
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS

Lee McCarthy

Person

Patents Grantslast 30 patents

High voltage III-nitride semiconductor devices

III-N device structures having a non-insulating substrate

Electrolysis transistor

High voltage III-nitride semiconductor devices

Method using low temperature wafer bonding to fabricate transistors...

Method for fabricating a direct wafer bonded optoelectronic device

(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectroni...

Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectr...

Group III nitride based FETs and HEMTs with reduced trapping and me...

Patents Applicationslast 30 patents

HIGH VOLTAGE III-NITRIDE SEMICONDUCTOR DEVICES

Compact electric appliance for providing gas for combustion

III-N DEVICE STRUCTURES HAVING A NON-INSULATING SUBSTRATE

METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS...

High Voltage III-Nitride Semiconductor Devices

(Al,Ga,In)N AND ZnO DIRECT WAFER BONDED STRUCTURE FOR OPTOELECTRONI...

Compact electric appliance for providing gas for combustion

Compact electric appliance providing hydrogen injection for improve...

METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LA...

Electrolysis transistor

METHOD USING LOW TEMPERATURE WAFER BONDING TO FABRICATE TRANSISTORS...

METHOD TO FABRICATE III-N FIELD EFFECT TRANSISTORS USING ION IMPLAN...

(Al, Ga, In)N and ZnO direct wafer bonded structure for optoelectro...

Method for wafer bonding (Al, In, Ga)N and Zn(S, Se) for optoelectr...

Group III nitride based FETs and hemts with reduced trapping and me...