Lei Xue

Person

Wuhan City, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory devices with reduced cell interference and...
- Patent number 12,185,536
- Issue date Dec 31, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
Information Patent Grant
Three-dimensional memory device with improved charge lateral migrat...
- Patent number 12,171,098
- Issue date Dec 17, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,089,405
- Issue date Sep 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Memory peripheral circuit having three-dimensional transistors and...
- Patent number 12,063,784
- Issue date Aug 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with channel structures having plu...
- Patent number 12,052,865
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step L-shaped selective epitaxial growth
- Patent number 12,052,866
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 12,035,524
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip capacitors in semiconductor devices and methods for forming...
- Patent number 11,955,422
- Issue date Apr 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 11,925,019
- Issue date Mar 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Channel structures having protruding portions in three-dimensional...
- Patent number 11,917,823
- Issue date Feb 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Methods for forming three-dimensional memory devices with channel s...
- Patent number 11,877,449
- Issue date Jan 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wanbo Geng
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,751,385
- Issue date Sep 5, 2023
- Yangtze Memory Technologies Co., Ltd.
- Jiaqian Xue
Information Patent Grant
Three-dimensional NAND memory device with split gates
- Patent number 11,716,847
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Tingting Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip capacitors in semiconductor devices and methods for forming...
- Patent number 11,652,042
- Issue date May 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for forming the same
- Patent number 11,563,021
- Issue date Jan 24, 2023
- Yangtze Memory Technologies Co., Ltd.
- Bo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with improved charge confinement a...
- Patent number 11,538,824
- Issue date Dec 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 11,515,329
- Issue date Nov 29, 2022
- Yangtze Memory Technologies Co., Ltd.
- Lan Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with architecture of increased num...
- Patent number 11,502,099
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,348,936
- Issue date May 31, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,342,352
- Issue date May 24, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip capacitors in three-dimensional semiconductor devices and m...
- Patent number 11,302,627
- Issue date Apr 12, 2022
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,094,714
- Issue date Aug 17, 2021
- Yangtze Memory Technologies Co., Ltd.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device
- Patent number 11,069,712
- Issue date Jul 20, 2021
- Yangtze Memory Technologies Co., Ltd.
- Lan Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices with architecture of increased num...
- Patent number 10,879,263
- Issue date Dec 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Jun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and manufacturing method thereof
- Patent number 10,854,628
- Issue date Dec 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Lan Yao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE UTILIZING DUMMY MEMORY BLOCKS TO MI...
- Publication number 20250017006
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Fan Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY CELL WITH DUAL-SIDE CONTACTS AND METHOD OF FABRICATION
- Publication number 20250017026
- Publication date Jan 9, 2025
- Yangtze Memory Technologies Co., Ltd.
- Li Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS THEREOF AND MEMORY...
- Publication number 20240407169
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Tingting Zhao
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM
- Publication number 20240407168
- Publication date Dec 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Quan Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240237338
- Publication date Jul 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Longxiang YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING TSG DECK AND METHOD OF FORMING THE SAME
- Publication number 20240224519
- Publication date Jul 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wenbo ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE CONTAINING TSG DECK AND METHOD OF FORMING THE SAME
- Publication number 20240224520
- Publication date Jul 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wenbo ZHANG
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215231
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- SiMin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING...
- Publication number 20240213144
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lei Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215236
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240215238
- Publication date Jun 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Beibei LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240206167
- Publication date Jun 20, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wenbo Zhang
Information Patent Application
SEMICONDUCTOR COMPONENTS, FABRICATION METHODS THEREOF AND MEMORY SY...
- Publication number 20240196632
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Sheng Peng
Information Patent Application
BI-DIRECTIONAL CONDUCTIVE SIGNAL PATH FOR A 3D NAND DEVICE AND METH...
- Publication number 20240196607
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Application
SEMICONDUCTOR STRUCTURE, THREE-DIMENSIONAL MEMORY, MEMORY SYSTEM, A...
- Publication number 20240194606
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Jiajia Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...
- Publication number 20240194607
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Qiangwei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, FABRICATION METHOD, AND MEMORY SYSTEM
- Publication number 20240196621
- Publication date Jun 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240185918
- Publication date Jun 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin LIU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20240170425
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Kun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING SACRIFICIAL LAYERS OF A STACK OF A THREE-DIMENS...
- Publication number 20240172437
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240138148
- Publication date Apr 25, 2024
- Yangtze Memory Technologies Co., Ltd.
- Longxiang YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20240055353
- Publication date Feb 15, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240015973
- Publication date Jan 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Longxiang YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY, THE MANUFACTURING METHOD FOR THE SAME, AN...
- Publication number 20230200076
- Publication date Jun 22, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xiaoxin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D MEMORY DEVICE
- Publication number 20230092768
- Publication date Mar 23, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lan YAO
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367504
- Publication date Nov 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367394
- Publication date Nov 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367503
- Publication date Nov 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Chao Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...
- Publication number 20220367505
- Publication date Nov 17, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...
- Publication number 20220149070
- Publication date May 12, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wanbo Geng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Three-dimensional memory devices with reduced cell interference and...

Three-dimensional memory device with improved charge lateral migrat...

Three-dimensional memory devices with channel structures having plu...

Memory peripheral circuit having three-dimensional transistors and...

Three-dimensional memory devices with channel structures having plu...

Two-step L-shaped selective epitaxial growth

Channel structures having protruding portions in three-dimensional...

On-chip capacitors in semiconductor devices and methods for forming...

Channel structures having protruding portions in three-dimensional...

Channel structures having protruding portions in three-dimensional...

Methods for forming three-dimensional memory devices with channel s...

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional NAND memory device with split gates

On-chip capacitors in semiconductor devices and methods for forming...

Memory device and method for forming the same

Three-dimensional memory devices with improved charge confinement a...

Three-dimensional memory device and manufacturing method thereof

Three-dimensional memory devices with architecture of increased num...

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory devices and fabricating methods thereof

On-chip capacitors in three-dimensional semiconductor devices and m...

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory device

Three-dimensional memory devices with architecture of increased num...

Three-dimensional memory device and manufacturing method thereof

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE UTILIZING DUMMY MEMORY BLOCKS TO MI...

3D MEMORY CELL WITH DUAL-SIDE CONTACTS AND METHOD OF FABRICATION

SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS THEREOF AND MEMORY...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF, MEMORY SYSTEM

THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

MEMORY DEVICE CONTAINING TSG DECK AND METHOD OF FORMING THE SAME

MEMORY DEVICE CONTAINING TSG DECK AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

ON-CHIP CAPACITORS IN SEMICONDUCTOR DEVICES AND METHODS FOR FORMING...

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

SEMICONDUCTOR COMPONENTS, FABRICATION METHODS THEREOF AND MEMORY SY...

BI-DIRECTIONAL CONDUCTIVE SIGNAL PATH FOR A 3D NAND DEVICE AND METH...

SEMICONDUCTOR STRUCTURE, THREE-DIMENSIONAL MEMORY, MEMORY SYSTEM, A...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, MEMORY AND M...

SEMICONDUCTOR DEVICE, FABRICATION METHOD, AND MEMORY SYSTEM

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

METHOD FOR REMOVING SACRIFICIAL LAYERS OF A STACK OF A THREE-DIMENS...

THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

CONTACT STRUCTURE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

THREE-DIMENSIONAL MEMORY, THE MANUFACTURING METHOD FOR THE SAME, AN...

3D MEMORY DEVICE

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

MEMORY PERIPHERAL CIRCUIT HAVING THREE-DIMENSIONAL TRANSISTORS AND...

CHANNEL STRUCTURES HAVING PROTRUDING PORTIONS IN THREE-DIMENSIONAL...