Li Juin Yip

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor transistor device having a titled body contact area a...
- Patent number 12,166,080
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,764,272
- Issue date Sep 19, 2023
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an alignment layer with mask pits
- Patent number 11,699,725
- Issue date Jul 11, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,670,684
- Issue date Jun 6, 2023
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a transistor cell region and a terminat...
- Patent number 11,462,620
- Issue date Oct 4, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,296,218
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 10,903,321
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plate structures
- Patent number 10,872,957
- Issue date Dec 22, 2020
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination area with trench el...
- Patent number 10,868,173
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a reduced surface doping in an edge ter...
- Patent number 10,727,331
- Issue date Jul 28, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having different gate crossings, and met...
- Patent number 10,629,595
- Issue date Apr 21, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor and method for forming the semiconductor t...
- Patent number 10,573,731
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plate structures in a...
- Patent number 10,510,846
- Issue date Dec 17, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing a power MOSFET
- Patent number 10,453,929
- Issue date Oct 22, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having termination trench
- Patent number 10,453,931
- Issue date Oct 22, 2019
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming semiconductor devices
- Patent number 10,276,670
- Issue date Apr 30, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced gate charge field-effect transistor
- Patent number 10,205,015
- Issue date Feb 12, 2019
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a charge comp...
- Patent number 10,199,456
- Issue date Feb 5, 2019
- Infineon Technologies Austria AG
- Minghao Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with a metal-filled...
- Patent number 10,177,250
- Issue date Jan 8, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having termination trench
- Patent number 10,164,025
- Issue date Dec 25, 2018
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with needle-shaped field plates and a gate str...
- Patent number 10,050,113
- Issue date Aug 14, 2018
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench with different electrode mater...
- Patent number 9,899,488
- Issue date Feb 20, 2018
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with field electrode and contact structure
- Patent number 9,799,738
- Issue date Oct 24, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal-filled groove in polysilicon gate e...
- Patent number 9,768,290
- Issue date Sep 19, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced gate charge field-effect transistor
- Patent number 9,755,066
- Issue date Sep 5, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with seperate gate and field plate trenches
- Patent number 9,680,004
- Issue date Jun 13, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating block in a semiconductor trench
- Patent number 9,590,062
- Issue date Mar 7, 2017
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with charge compensation region underneath gat...
- Patent number 9,443,973
- Issue date Sep 13, 2016
- Infineon Technologies Austria AG
- Minghao Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and contact structure for coupling a doped body region to a...
- Patent number 9,190,480
- Issue date Nov 17, 2015
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal-filled groove in polysilicon gate e...
- Patent number 9,105,713
- Issue date Aug 11, 2015
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR TRANSISTOR DEVICE HAVING A TITLED BODY CONTACT AREA...
- Publication number 20230246071
- Publication date Aug 3, 2023
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device and Method of Fabricating a Transistor Device
- Publication number 20230055891
- Publication date Feb 23, 2023
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...
- Publication number 20220376062
- Publication date Nov 24, 2022
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210367045
- Publication date Nov 25, 2021
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20210249510
- Publication date Aug 12, 2021
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Alignment Layer with Mask Pits
- Publication number 20210098580
- Publication date Apr 1, 2021
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...
- Publication number 20210066459
- Publication date Mar 4, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20200365724
- Publication date Nov 19, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...
- Publication number 20200328303
- Publication date Oct 15, 2020
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plate Structures
- Publication number 20200127102
- Publication date Apr 23, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Termination Trench
- Publication number 20190097005
- Publication date Mar 28, 2019
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Different Gate Crossings, and Met...
- Publication number 20190006357
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...
- Publication number 20190006513
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Method for Manufacturing a Semiconductor...
- Publication number 20180166543
- Publication date Jun 14, 2018
- lnfineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device with a Metal-Filled...
- Publication number 20180026130
- Publication date Jan 25, 2018
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Field-Effect Transistor
- Publication number 20170345924
- Publication date Nov 30, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming Semiconductor Devices
- Publication number 20170330964
- Publication date Nov 16, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor and Method for Forming the Semiconductor T...
- Publication number 20170271491
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plate Structures in a...
- Publication number 20170250255
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Needle-Shaped Field Plates and a Gate Str...
- Publication number 20170250256
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing a Power MOSFET
- Publication number 20170236910
- Publication date Aug 17, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Gate Charge Field-Effect Transistor
- Publication number 20170154993
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Trench with Different Electrode Mater...
- Publication number 20170133474
- Publication date May 11, 2017
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
- Publication number 20170077227
- Publication date Mar 16, 2017
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Charge Comp...
- Publication number 20160372538
- Publication date Dec 22, 2016
- Infineon Technologies Austria AG
- Minghao Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulating Block in a Semiconductor Trench
- Publication number 20160240621
- Publication date Aug 18, 2016
- Infineon Technologies Austria AG
- Li Juin Yip
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CHARGE COMPENSATION REGION UNDERNEATH GAT...
- Publication number 20160149028
- Publication date May 26, 2016
- Minghao Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing a Semiconductor De...
- Publication number 20160111504
- Publication date Apr 21, 2016
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and a Method for Manufacturing a Semiconductor...
- Publication number 20160064477
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Field Electrode and Contact Structure
- Publication number 20160064496
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS

Li Juin Yip

Person

Patents Grantslast 30 patents

Semiconductor transistor device having a titled body contact area a...

Semiconductor device and method of manufacturing the same

Semiconductor device having an alignment layer with mask pits

Semiconductor transistor device and method of manufacturing the same

Semiconductor device having a transistor cell region and a terminat...

Semiconductor device

Semiconductor device and method of manufacturing a semiconductor de...

Semiconductor device with needle-shaped field plate structures

Semiconductor device having an edge termination area with trench el...

Semiconductor device having a reduced surface doping in an edge ter...

Power semiconductor device having different gate crossings, and met...

Semiconductor transistor and method for forming the semiconductor t...

Semiconductor device with needle-shaped field plate structures in a...

Methods of manufacturing a power MOSFET

Semiconductor device having termination trench

Semiconductor devices and methods for forming semiconductor devices

Reduced gate charge field-effect transistor

Method of manufacturing a semiconductor device having a charge comp...

Method of manufacturing a semiconductor device with a metal-filled...

Semiconductor device having termination trench

Semiconductor device with needle-shaped field plates and a gate str...

Semiconductor device having a trench with different electrode mater...

Semiconductor device with field electrode and contact structure

Semiconductor device with metal-filled groove in polysilicon gate e...

Reduced gate charge field-effect transistor

Power MOSFET with seperate gate and field plate trenches

Insulating block in a semiconductor trench

Semiconductor device with charge compensation region underneath gat...

Method and contact structure for coupling a doped body region to a...

Semiconductor device with metal-filled groove in polysilicon gate e...

Patents Applicationslast 30 patents

SEMICONDUCTOR TRANSISTOR DEVICE HAVING A TITLED BODY CONTACT AREA...

Transistor Device and Method of Fabricating a Transistor Device

SEMICONDUCTOR DEVICE HAVING NEEDLE-SHAPED FIRST FIELD PLATE STRUCTU...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Transistor Device and Method of Manufacturing the Same

Semiconductor Device Having an Alignment Layer with Mask Pits

SEMICONDUCTOR DEVICE HAVING A TRANSISTOR CELL REGION AND A TERMINAT...

Semiconductor Device

SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...

Semiconductor Device with Needle-Shaped Field Plate Structures

Semiconductor Device Having Termination Trench

Power Semiconductor Device Having Different Gate Crossings, and Met...

Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...

Semiconductor Device and a Method for Manufacturing a Semiconductor...

Method of Manufacturing a Semiconductor Device with a Metal-Filled...

Reduced Gate Charge Field-Effect Transistor

Semiconductor Devices and Methods for Forming Semiconductor Devices

Semiconductor Transistor and Method for Forming the Semiconductor T...

Semiconductor Device with Needle-Shaped Field Plate Structures in a...

Semiconductor Device with Needle-Shaped Field Plates and a Gate Str...

Methods of Manufacturing a Power MOSFET

Reduced Gate Charge Field-Effect Transistor

Semiconductor Device Having a Trench with Different Electrode Mater...

Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts

Method of Manufacturing a Semiconductor Device Having a Charge Comp...

Insulating Block in a Semiconductor Trench

SEMICONDUCTOR DEVICE WITH CHARGE COMPENSATION REGION UNDERNEATH GAT...

Semiconductor Device and Method of Manufacturing a Semiconductor De...

Semiconductor Device and a Method for Manufacturing a Semiconductor...

Semiconductor Device with Field Electrode and Contact Structure