Li-Lin Su

Person

Dongshih, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Source/drain device and method of forming thereof
- Patent number 11,990,511
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-I Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source/drain features
- Patent number 11,961,912
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-An Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structures exposed in airgaps for semiconductor devices
- Patent number 11,923,409
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal fill with self-aligned patterning and dielectric with v...
- Patent number 11,860,550
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-I Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain formation with reduced selective loss defects
- Patent number 11,855,188
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of semiconductor devices and methods of formin...
- Patent number 11,804,487
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETS
- Patent number 11,728,208
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and manufacturing method thereof
- Patent number 11,688,793
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial layers for transistors
- Patent number 11,677,013
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quality of service adjusting method based on application categories...
- Patent number 11,606,305
- Issue date Mar 14, 2023
- Wistron NeWeb Corporation
- Li-Heng Su
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
FETs and methods of forming FETs
- Patent number 11,600,715
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structures and method of forming
- Patent number 11,600,534
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,532,750
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Li-Li Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a source/drain region with a multi-sloped unde...
- Patent number 11,527,650
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain formation with reduced selective loss defects
- Patent number 11,444,181
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal fill with self-aligned patterning and dielectric with v...
- Patent number 11,422,475
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-I Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source/drain features
- Patent number 11,355,641
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-An Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of semiconductor devices and methods of formin...
- Patent number 11,296,080
- Issue date Apr 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper contact plugs with barrier layers
- Patent number 11,251,131
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Lin Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit interconnect structures with air gaps
- Patent number 11,244,898
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-I Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having a non-faceted top surface portion for a source/drain...
- Patent number 11,205,713
- Issue date Dec 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device convex source/drain region
- Patent number 11,127,637
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,127,680
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Kang Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of interconnection structure of semi...
- Patent number 11,088,020
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-I Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with epitaxial source/drain
- Patent number 11,018,224
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Ta Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device convex source/drain region
- Patent number 11,004,745
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FETS and methods of forming FETS
- Patent number 11,004,724
- Issue date May 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,991,795
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source/drain features
- Patent number 10,950,730
- Issue date Mar 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-An Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device and method of forming the same
- Patent number 10,867,861
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS
- Publication number 20240113205
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-METAL FILL WITH SELF-ALIGNED PATTERNING AND DIELECTRIC WITH V...
- Publication number 20240085803
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-I YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT SUPPRESSION AND METHOD FO...
- Publication number 20230395434
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions and Methods of Forming Same
- Publication number 20230377989
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hui-Lin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions of Semiconductor Devices and Methods of Formin...
- Publication number 20230378176
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURES GROWN ON MATERIAL WITH A CRYSTALLOGRAPHIC ORIE...
- Publication number 20230343819
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20230343635
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20230343855
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Regions of Semiconductor Device and Methods of Forming...
- Publication number 20230317785
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yung-Chun Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN EPITAXIAL LAYERS FOR TRANSISTORS
- Publication number 20230299180
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Co, LTD.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Source/Drain Regions and Methods of Forming the Same
- Publication number 20230275123
- Publication date Aug 31, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMUNICATION EQUIPMENT AND ADAPTIVE QUALITY OF SERVICE SETTING MET...
- Publication number 20230224251
- Publication date Jul 13, 2023
- WISTRON NEWEB CORPORATION
- Li-Heng SU
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
FETS AND METHODS OF FORMING FETS
- Publication number 20230215935
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20230207396
- Publication date Jun 29, 2023
- Taiwan Semiconductor Manfacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nano-Structure Transistors with Air Inner Spacers and Methods Formi...
- Publication number 20230187524
- Publication date Jun 15, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230065620
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Device and Method of Forming Thereof
- Publication number 20230068434
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chien-I Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjusting the Profile of Source/Drain Regions to Reduce Leakage
- Publication number 20230028591
- Publication date Jan 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsz-Mei Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220367717
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Li Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Source/Drain Regions and Methods of Forming the Same
- Publication number 20220367625
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME
- Publication number 20220359679
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei Hao Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...
- Publication number 20220359653
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20220359742
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Metal Fill with Self-Aligned Patterning and Dielectric with V...
- Publication number 20220350262
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tai-I YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220344151
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20220336677
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220328657
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Formation with Reduced Selective Loss Defects
- Publication number 20220328660
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source/Drain Structures and Method of Forming
- Publication number 20220319934
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structures For Semiconductor Devices
- Publication number 20220320276
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Source/drain device and method of forming thereof

Merged source/drain features

Epitaxial structures exposed in airgaps for semiconductor devices

Multi-metal fill with self-aligned patterning and dielectric with v...

Source/drain formation with reduced selective loss defects

Source/drain regions of semiconductor devices and methods of formin...

FETS and methods of forming FETS

Integrated circuit structure and manufacturing method thereof

Source/drain epitaxial layers for transistors

Quality of service adjusting method based on application categories...

FETs and methods of forming FETs

Source/drain structures and method of forming

Semiconductor device and method of manufacture

FinFET device having a source/drain region with a multi-sloped unde...

Source/drain formation with reduced selective loss defects

Multi-metal fill with self-aligned patterning and dielectric with v...

Merged source/drain features

Source/drain regions of semiconductor devices and methods of formin...

Copper contact plugs with barrier layers

Integrated circuit interconnect structures with air gaps

FinFET having a non-faceted top surface portion for a source/drain...

Semiconductor device convex source/drain region

Semiconductor device and manufacturing method thereof

Structure and formation method of interconnection structure of semi...

Semiconductor device with epitaxial source/drain

Semiconductor device convex source/drain region

FETS and methods of forming FETS

Semiconductor device and manufacturing method thereof

Merged source/drain features

Fin field-effect transistor device and method of forming the same

Patents Applicationslast 30 patents

SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS

MULTI-METAL FILL WITH SELF-ALIGNED PATTERNING AND DIELECTRIC WITH V...

SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT SUPPRESSION AND METHOD FO...

Source/Drain Regions and Methods of Forming Same

Source/Drain Regions of Semiconductor Devices and Methods of Formin...

EPITAXIAL STRUCTURES GROWN ON MATERIAL WITH A CRYSTALLOGRAPHIC ORIE...

FETS and Methods of Forming FETS

INTEGRATED CIRCUIT STRUCTURE

Source/Drain Regions of Semiconductor Device and Methods of Forming...

SOURCE/DRAIN EPITAXIAL LAYERS FOR TRANSISTORS

Transistor Source/Drain Regions and Methods of Forming the Same

COMMUNICATION EQUIPMENT AND ADAPTIVE QUALITY OF SERVICE SETTING MET...

FETS AND METHODS OF FORMING FETS

Source/Drain Structures and Method of Forming

Nano-Structure Transistors with Air Inner Spacers and Methods Formi...

SEMICONDUCTOR DEVICE AND METHOD

Source/Drain Device and Method of Forming Thereof

Adjusting the Profile of Source/Drain Regions to Reduce Leakage

Semiconductor Device and Method of Manufacture

Transistor Source/Drain Regions and Methods of Forming the Same

BACKSIDE SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME

SOURCE/DRAIN REGIONS OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING...

Semiconductor Device and Method

Multi-Metal Fill with Self-Aligned Patterning and Dielectric with V...

Semiconductor Device and Method of Manufacture

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

INTEGRATED CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF

Source/Drain Formation with Reduced Selective Loss Defects

Source/Drain Structures and Method of Forming

Epitaxial Structures For Semiconductor Devices