Liang-Kai Han

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Deep trench isolation of embedded DRAM for improved latch-up immunity
- Patent number 6,885,080
- Issue date Apr 26, 2005
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of providing variant fills in semiconductor trenches
- Patent number 6,410,402
- Issue date Jun 25, 2002
- International Business Machines Corporation
- Jay Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen co-implantation to form shallow junction-extensions of p-t...
- Patent number 6,369,434
- Issue date Apr 9, 2002
- International Business Machines Corporation
- Kai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating different gate oxide thicknesses within the...
- Patent number 6,335,262
- Issue date Jan 1, 2002
- International Business Machines Corporation
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned deep trench isolation to shallow trench isolation
- Patent number 6,297,127
- Issue date Oct 2, 2001
- International Business Machines Corporation
- Bomy A. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness of gate oxide
- Patent number 6,258,673
- Issue date Jul 10, 2001
- International Business Machines Corporation
- Kevin M. Houlihan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low programming voltage anti-fuse
- Patent number 6,096,580
- Issue date Aug 1, 2000
- International Business Machines Corporation
- S. Sundar Kumar Iyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEEP TRENCH ISOLATION OF EMBEDDED DRAM FOR IMPROVED LATCH-UP IMMUNITY
- Publication number 20050106836
- Publication date May 19, 2005
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep trench isolation of embedded DRAM for improved latch-up immunity
- Publication number 20030162400
- Publication date Aug 28, 2003
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating different gate oxide thickness within the sa...
- Publication number 20030094660
- Publication date May 22, 2003
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS

Liang-Kai Han

Person

Patents Grantslast 30 patents

Deep trench isolation of embedded DRAM for improved latch-up immunity

Method of providing variant fills in semiconductor trenches

Nitrogen co-implantation to form shallow junction-extensions of p-t...

Method for fabricating different gate oxide thicknesses within the...

Self-aligned deep trench isolation to shallow trench isolation

Multiple thickness of gate oxide

Low programming voltage anti-fuse

Patents Applicationslast 30 patents

DEEP TRENCH ISOLATION OF EMBEDDED DRAM FOR IMPROVED LATCH-UP IMMUNITY

Deep trench isolation of embedded DRAM for improved latch-up immunity

Method for fabricating different gate oxide thickness within the sa...