Liang Yi

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Structure of memory device having floating gate with protruding str...
- Patent number 12,185,532
- Issue date Dec 31, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor memory device having a t-shaped er...
- Patent number 12,057,481
- Issue date Aug 6, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof
- Patent number 12,040,369
- Issue date Jul 16, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory with control gate having nonplanar top surface
- Patent number 11,943,920
- Issue date Mar 26, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET...
- Patent number 11,882,699
- Issue date Jan 23, 2024
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memor...
- Patent number 11,856,771
- Issue date Dec 26, 2023
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device having floating gate with protruding str...
- Patent number 11,765,893
- Issue date Sep 19, 2023
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof
- Patent number 11,699,730
- Issue date Jul 11, 2023
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a nonvolatile memory device with a low-voltage transis...
- Patent number 11,100,995
- Issue date Aug 24, 2021
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device having floating gate with protruding str...
- Patent number 11,056,495
- Issue date Jul 6, 2021
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of memory device and fabrication method thereof
- Patent number 10,868,197
- Issue date Dec 15, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating low and high/medium voltage transistors on s...
- Patent number 10,825,522
- Issue date Nov 3, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET semiconductor device
- Patent number 10,332,884
- Issue date Jun 25, 2019
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory cell and fabrication method thereof
- Patent number 10,192,874
- Issue date Jan 29, 2019
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 10,153,359
- Issue date Dec 11, 2018
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with SRAM devices having read assist circuits a...
- Patent number 10,115,453
- Issue date Oct 30, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Zhihong Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having memory cell structure and method of man...
- Patent number 10,090,465
- Issue date Oct 2, 2018
- United Microelectronics Corp.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 9,966,383
- Issue date May 8, 2018
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having memory cell structure
- Patent number 9,859,335
- Issue date Jan 2, 2018
- United Microelectronics Corp.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device for reducing grain siz...
- Patent number 9,852,912
- Issue date Dec 26, 2017
- United Microelectronics Corp.
- Sheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory and method of forming the same
- Patent number 9,806,255
- Issue date Oct 31, 2017
- United Microelectronics Corp.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making the same
- Patent number 9,799,705
- Issue date Oct 24, 2017
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage trench transistor
- Patent number 9,570,545
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yemin Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digitally controlled oscillator (DCO) for a phase locked loop (PLL)...
- Patent number 9,559,709
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Zhihong Luo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Digital phase locked loop (PLL) system and method with phase tracing
- Patent number 9,548,748
- Issue date Jan 17, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Zhihong Luo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Digital phase locked loop (PLL) system with frequency band jump in...
- Patent number 9,520,885
- Issue date Dec 13, 2016
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Zhihong Luo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Split gate non-volatile memory device and method for fabricating th...
- Patent number 9,379,128
- Issue date Jun 28, 2016
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of trench MOS with low voltage integrated circuits
- Patent number 9,209,297
- Issue date Dec 8, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage trench transistor
- Patent number 9,054,133
- Issue date Jun 9, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yemin Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of high voltage trench transistor with low voltage CMOS...
- Patent number 8,999,769
- Issue date Apr 7, 2015
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240332384
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240332383
- Publication date Oct 3, 2024
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20240074174
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230402517
- Publication date Dec 14, 2023
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF MEMORY DEVICE HAVING FLOATING GATE WITH PROTRUDING STR...
- Publication number 20230380154
- Publication date Nov 23, 2023
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230299160
- Publication date Sep 21, 2023
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION THEREOF
- Publication number 20230045722
- Publication date Feb 9, 2023
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230029468
- Publication date Feb 2, 2023
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS) MEMOR...
- Publication number 20220352195
- Publication date Nov 3, 2022
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS) MEMORY CELL FOR FINFET...
- Publication number 20220293624
- Publication date Sep 15, 2022
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF MEMORY DEVICE HAVING FLOATING GATE WITH PROTRUDING STR...
- Publication number 20210280590
- Publication date Sep 9, 2021
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20210020247
- Publication date Jan 21, 2021
- United Microelectronics Corp.
- LIANG YI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF MEMORY DEVICE HAVING FLOATING GATE WITH PROTRUDING STR...
- Publication number 20200395369
- Publication date Dec 17, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20200373436
- Publication date Nov 26, 2020
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200135274
- Publication date Apr 30, 2020
- United Microelectronics Corp.
- LIANG YI
- G11 - INFORMATION STORAGE
Information Patent Application
FINFET SEMICONDUCTOR DEVICE
- Publication number 20190131302
- Publication date May 2, 2019
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY CELL AND FABRICATION METHOD THEREOF
- Publication number 20180366478
- Publication date Dec 20, 2018
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY (RRAM) AND FORMING METHOD THEREOF
- Publication number 20180205013
- Publication date Jul 19, 2018
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH SRAM DEVICES HAVING READ ASSIST CIRCUITS A...
- Publication number 20180174646
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Zhihong Luo
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MEMORY CELL STRUCTURE AND METHOD OF MAN...
- Publication number 20180108837
- Publication date Apr 19, 2018
- United Microelectronics Corp.
- Chia-Ching Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20180047842
- Publication date Feb 15, 2018
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20180033961
- Publication date Feb 1, 2018
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY AND METHOD OF FABRICATING THE SAME
- Publication number 20170221911
- Publication date Aug 3, 2017
- UNITED MICROELECTRONICS CORP.
- Liang Yi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20170110469
- Publication date Apr 20, 2017
- United Microelectronics Corp.
- Liang Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRENCH TRANSISTOR
- Publication number 20150236085
- Publication date Aug 20, 2015
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yemin DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF TRENCH MOS WITH LOW VOLTAGE INTEGRATED CIRCUITS
- Publication number 20140070310
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Purakh Raj VERMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF HIGH VOLTAGE TRENCH TRANSISTOR WITH LOW VOLTAGE CMOS...
- Publication number 20140021534
- Publication date Jan 23, 2014
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Purakh Raj VERMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRENCH TRANSISTOR
- Publication number 20130334601
- Publication date Dec 19, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Yemin DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF TRENCH MOS WITH LOW VOLTAGE INTEGRATED CIRCUITS
- Publication number 20130187224
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Purakh Raj VERMA
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Structure of memory device having floating gate with protruding str...

Method for forming semiconductor memory device having a t-shaped er...

Semiconductor memory device and fabrication method thereof

Split gate memory with control gate having nonplanar top surface

Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell for FINFET...

Method of forming silicon-oxide-nitride-oxide-silicon (SONOS) memor...

Structure of memory device having floating gate with protruding str...

Semiconductor memory device and fabrication method thereof

Structure of a nonvolatile memory device with a low-voltage transis...

Structure of memory device having floating gate with protruding str...

Structure of memory device and fabrication method thereof

Method for fabricating low and high/medium voltage transistors on s...

FinFET semiconductor device

Nonvolatile memory cell and fabrication method thereof

Semiconductor structure and method for forming the same

Integrated circuits with SRAM devices having read assist circuits a...

Semiconductor device having memory cell structure and method of man...

Semiconductor structure and manufacturing method thereof

Semiconductor device having memory cell structure

Method of manufacturing semiconductor device for reducing grain siz...

Resistive random access memory and method of forming the same

Semiconductor device and method of making the same

High voltage trench transistor

Digitally controlled oscillator (DCO) for a phase locked loop (PLL)...

Digital phase locked loop (PLL) system and method with phase tracing

Digital phase locked loop (PLL) system with frequency band jump in...

Split gate non-volatile memory device and method for fabricating th...

Integration of trench MOS with low voltage integrated circuits

High voltage trench transistor

Integration of high voltage trench transistor with low voltage CMOS...

Patents Applicationslast 30 patents

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

STRUCTURE OF MEMORY DEVICE HAVING FLOATING GATE WITH PROTRUDING STR...

METHOD FOR FORMING SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION THEREOF

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

METHOD OF FORMING SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS) MEMOR...

SILICON-OXIDE-NITRIDE-OXIDE-SILICON (SONOS) MEMORY CELL FOR FINFET...

STRUCTURE OF MEMORY DEVICE HAVING FLOATING GATE WITH PROTRUDING STR...

NONVOLATILE MEMORY DEVICE

STRUCTURE OF MEMORY DEVICE HAVING FLOATING GATE WITH PROTRUDING STR...

STRUCTURE OF MEMORY DEVICE AND FABRICATION METHOD THEREOF

NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

FINFET SEMICONDUCTOR DEVICE

NONVOLATILE MEMORY CELL AND FABRICATION METHOD THEREOF

RESISTIVE RANDOM ACCESS MEMORY (RRAM) AND FORMING METHOD THEREOF

INTEGRATED CIRCUITS WITH SRAM DEVICES HAVING READ ASSIST CIRCUITS A...

SEMICONDUCTOR DEVICE HAVING MEMORY CELL STRUCTURE AND METHOD OF MAN...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

FLASH MEMORY AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

HIGH VOLTAGE TRENCH TRANSISTOR

INTEGRATION OF TRENCH MOS WITH LOW VOLTAGE INTEGRATED CIRCUITS

INTEGRATION OF HIGH VOLTAGE TRENCH TRANSISTOR WITH LOW VOLTAGE CMOS...

HIGH VOLTAGE TRENCH TRANSISTOR

INTEGRATION OF TRENCH MOS WITH LOW VOLTAGE INTEGRATED CIRCUITS