Lichuan Zhao

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Wuhan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Complementary metal oxide semiconductor circuit of memory device
- Patent number 12,165,715
- Issue date Dec 10, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lichuan Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices with drain select gate cut and met...
- Patent number 12,058,857
- Issue date Aug 6, 2024
- Yangtze Memory Technologies Co., Ltd.
- Lichuan Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory devices with drain select gate cut and met...
- Patent number 11,309,323
- Issue date Apr 19, 2022
- Yangtze Memory Technologies Co., Ltd.
- Yuhui Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR CIRCUIT OF MEMORY DEVICE
- Publication number 20250061952
- Publication date Feb 20, 2025
- Yangtze Memory Technologies Co., Ltd.
- Lichuan Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR CIRCUIT OF MEMORY DEVICE
- Publication number 20230139130
- Publication date May 4, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lichuan Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN SELECT GATE CUT AND MET...
- Publication number 20210391353
- Publication date Dec 16, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Lichuan Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH DRAIN SELECT GATE CUT AND MET...
- Publication number 20210391348
- Publication date Dec 16, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Yuhui Han
- H01 - BASIC ELECTRIC ELEMENTS