Linda R. Black

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,779,525
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,618,617
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,492,234
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing strain-inducing materials in CMOS circuits in a...
- Patent number 8,426,265
- Issue date Apr 23, 2013
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...
- Patent number 8,232,186
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing stacking faults through annealing
- Patent number 7,956,417
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault reduction in epitaxially grown silicon
- Patent number 7,893,493
- Issue date Feb 22, 2011
- International Business Machines Corproation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Decoder for a stationary switch machine
- Patent number 7,820,501
- Issue date Oct 26, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed MOS device
- Patent number 7,696,534
- Issue date Apr 13, 2010
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacking fault reduction in epitaxially grown silicon
- Patent number 7,674,720
- Issue date Mar 9, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sige channel epitaxial development for high-k PFET manufacturability
- Patent number 7,622,341
- Issue date Nov 24, 2009
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures including multiple crystallographic orient...
- Patent number 7,494,918
- Issue date Feb 24, 2009
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed MOS device and methods for its fabrication
- Patent number 7,456,058
- Issue date Nov 25, 2008
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed MOS device and method for its fabrication
- Patent number 7,410,859
- Issue date Aug 12, 2008
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabrication of a stressed MOS device
- Patent number 7,326,601
- Issue date Feb 5, 2008
- Advanced Micro Devices, Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an epitaxial layer for raised drain and source re...
- Patent number 7,223,662
- Issue date May 29, 2007
- Advanced Micro Devices, Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate transistor with metal-rich silicon layer and...
- Patent number 7,091,118
- Issue date Aug 15, 2006
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20130175547
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES, INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20130161759
- Publication date Jun 27, 2013
- GlobalFoundries, Inc.
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20120228716
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...
- Publication number 20120104507
- Publication date May 3, 2012
- International Business Machines Corporation
- Bo Bai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device
- Publication number 20110316046
- Publication date Dec 29, 2011
- GLOBALFOUNDRIES INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING
- Publication number 20100283089
- Publication date Nov 11, 2010
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20090294801
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE CHANNEL EPITAXIAL DEVELOPMENT FOR HIGH-K PFET MANUFACTURABILITY
- Publication number 20090181507
- Publication date Jul 16, 2009
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR SEMICONDUCTOR DEVICES WITH SILICON-GERMANI...
- Publication number 20090152590
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED MOS DEVICE AND METHODS FOR ITS FABRICATION
- Publication number 20090050963
- Publication date Feb 26, 2009
- Advanced Micro Devices, Inc.
- Igor PEIDOUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON
- Publication number 20080268609
- Publication date Oct 30, 2008
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED MOS DEVICE
- Publication number 20080258175
- Publication date Oct 23, 2008
- Advanced Micro Devices, Inc.
- Igor PEIDOUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING
- Publication number 20080087961
- Publication date Apr 17, 2008
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING MULTIPLE CRYSTALLOGRAPHIC ORIENT...
- Publication number 20080083952
- Publication date Apr 10, 2008
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON
- Publication number 20080006876
- Publication date Jan 10, 2008
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for fabrication of a stressed MOS device
- Publication number 20070072380
- Publication date Mar 29, 2007
- Advanced Micro Devices, Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an epitaxial layer for raised drain and source re...
- Publication number 20060003533
- Publication date Jan 5, 2006
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS

Linda R. Black

Person

Patents Grantslast 30 patents

Method for growing strain-inducing materials in CMOS circuits in a...

Field effect transistor device

Field effect transistor device

Method for growing strain-inducing materials in CMOS circuits in a...

Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...

Method of reducing stacking faults through annealing

Stacking fault reduction in epitaxially grown silicon

Decoder for a stationary switch machine

Stressed MOS device

Stacking fault reduction in epitaxially grown silicon

Sige channel epitaxial development for high-k PFET manufacturability

Semiconductor structures including multiple crystallographic orient...

Stressed MOS device and methods for its fabrication

Stressed MOS device and method for its fabrication

Methods for fabrication of a stressed MOS device

Method of forming an epitaxial layer for raised drain and source re...

Replacement metal gate transistor with metal-rich silicon layer and...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR DEVICE

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

METHOD FOR GROWING STRAIN-INDUCING MATERIALS IN CMOS CIRCUITS IN A...

Field Effect Transistor Device

METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

SIGE CHANNEL EPITAXIAL DEVELOPMENT FOR HIGH-K PFET MANUFACTURABILITY

METHOD AND STRUCTURE FOR SEMICONDUCTOR DEVICES WITH SILICON-GERMANI...

STRESSED MOS DEVICE AND METHODS FOR ITS FABRICATION

STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON

STRESSED MOS DEVICE

METHOD OF REDUCING STACKING FAULTS THROUGH ANNEALING

SEMICONDUCTOR STRUCTURES INCLUDING MULTIPLE CRYSTALLOGRAPHIC ORIENT...

STACKING FAULT REDUCTION IN EPITAXIALLY GROWN SILICON

Methods for fabrication of a stressed MOS device

Method of forming an epitaxial layer for raised drain and source re...