Linda S. Brush

Person

Mountaintop, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Power MOS device with buried gate
- Patent number 6,638,826
- Issue date Oct 28, 2003
- Fairchild Semiconductor Corporation
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power trench transistor device source region formation using silico...
- Patent number 6,455,379
- Issue date Sep 24, 2002
- Fairchild Semiconductor Corporation
- Linda S. Brush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOS device with buried gate and groove
- Patent number 6,445,035
- Issue date Sep 3, 2002
- Fairchild Semiconductor Corporation
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated device having trench walls formed by selective epitaxi...
- Patent number 6,373,098
- Issue date Apr 16, 2002
- Fairchild Semiconductor Corporation
- Linda S. Brush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power trench transistor device source region formation using silico...
- Patent number 6,246,090
- Issue date Jun 12, 2001
- Intersil Corporation
- Linda S. Brush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doubly graded junction termination extension for edge passivation o...
- Patent number 6,215,168
- Issue date Apr 10, 2001
- Intersil Corporation
- Linda Susan Brush
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a MOS-gated semiconductor device with a single dif...
- Patent number 6,080,614
- Issue date Jun 27, 2000
- John Manning Sauidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOS-gated semiconductor devices
- Patent number 5,877,044
- Issue date Mar 2, 1999
- Harris Corporation
- John Manning Savidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power MOS device with buried gate
- Publication number 20030011027
- Publication date Jan 16, 2003
- Jun Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power trench transistor device source region formation using silico...
- Publication number 20010022379
- Publication date Sep 20, 2001
- INTERSIL CORPORATION
- Linda S. Brush
- H01 - BASIC ELECTRIC ELEMENTS

Linda S. Brush

Person

Patents Grantslast 30 patents

Power MOS device with buried gate

Power trench transistor device source region formation using silico...

Power MOS device with buried gate and groove

Trench-gated device having trench walls formed by selective epitaxi...

Power trench transistor device source region formation using silico...

Doubly graded junction termination extension for edge passivation o...

Method of making a MOS-gated semiconductor device with a single dif...

Method of making MOS-gated semiconductor devices

Patents Applicationslast 30 patents

Power MOS device with buried gate

Power trench transistor device source region formation using silico...