Ling Xia

Person

Belmont, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor structure having buried island regions
- Patent number 10,566,192
- Issue date Feb 18, 2020
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-plate structures for semiconductor devices
- Patent number 9,911,817
- Issue date Mar 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitively-coupled field-plate structures for semiconductor devices
- Patent number 9,887,268
- Issue date Feb 6, 2018
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid structure with separate controls
- Patent number 9,754,937
- Issue date Sep 5, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-Nitride semiconductors with recess regions and methods of manuf...
- Patent number 9,614,069
- Issue date Apr 4, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a spacer layer
- Patent number 9,536,984
- Issue date Jan 3, 2017
- CAMBRIDGE ELECTRONICS, INC.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and etch technique for monolithic integrati...
- Patent number 9,502,535
- Issue date Nov 22, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field management for a group III-nitride semiconductor device
- Patent number 9,455,342
- Issue date Sep 27, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170358651
- Publication date Dec 14, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID STRUCTURE WITH SEPARATE CONTROLS
- Publication number 20170256538
- Publication date Sep 7, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...
- Publication number 20170092752
- Publication date Mar 30, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20170018617
- Publication date Jan 19, 2017
- Cambridge Electronics, Inc.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20160365437
- Publication date Dec 15, 2016
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
- Publication number 20160351564
- Publication date Dec 1, 2016
- Cambridge Electronics, Inc.
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATI...
- Publication number 20160300835
- Publication date Oct 13, 2016
- Cambridge Electronics, Inc.
- Ling Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS
- Publication number 20150349124
- Publication date Dec 3, 2015
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUC...
- Publication number 20150349064
- Publication date Dec 3, 2015
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20150144957
- Publication date May 28, 2015
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor structure having buried island regions

Field-plate structures for semiconductor devices

Capacitively-coupled field-plate structures for semiconductor devices

Hybrid structure with separate controls

III-Nitride semiconductors with recess regions and methods of manuf...

Semiconductor structure with a spacer layer

Semiconductor structure and etch technique for monolithic integrati...

Electric field management for a group III-nitride semiconductor device

Patents Applicationslast 30 patents

CAPACITIVELY-COUPLED FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

HYBRID STRUCTURE WITH SEPARATE CONTROLS

III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...

FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER

SEMICONDUCTOR STRUCTURE AND ETCH TECHNIQUE FOR MONOLITHIC INTEGRATI...

TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS

NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUC...

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE