Lixin Ge

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional (3D), vertically-integrated field-effect transist...
- Patent number 11,296,083
- Issue date Apr 5, 2022
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with metal gate having dielectric portion over i...
- Patent number 10,756,085
- Issue date Aug 25, 2020
- QUALCOMM Incorporated
- Ye Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Controlling dimensions of a negative capacitance layer of a gate st...
- Patent number 10,714,582
- Issue date Jul 14, 2020
- QUALCOMM Incorporated
- Bin Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,665,678
- Issue date May 26, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with low resistivity carbon alloy
- Patent number 10,636,789
- Issue date Apr 28, 2020
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact (SAC) on gate for improving metal oxide semico...
- Patent number 10,333,007
- Issue date Jun 25, 2019
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with fluorinated graphene spacer
- Patent number 10,263,080
- Issue date Apr 16, 2019
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line (MOL) metal resistor temperature sensors for localiz...
- Patent number 10,247,617
- Issue date Apr 2, 2019
- QUALCOMM Incorporated
- Lixin Ge
- G01 - MEASURING TESTING
Information Patent Grant
Low-power 5T SRAM with improved stability and reduced bitcell size
- Patent number 9,875,788
- Issue date Jan 23, 2018
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Stable SRAM bitcell design utilizing independent gate FinFET
- Patent number 9,865,330
- Issue date Jan 9, 2018
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
High density area efficient thin-oxide decoupling capacitor using c...
- Patent number 9,633,996
- Issue date Apr 25, 2017
- QUALCOMM Incorporated
- Lixin Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bone frame, low resistance via coupled metal oxide-metal (MOM) orth...
- Patent number 9,269,492
- Issue date Feb 23, 2016
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary back end of line (BEOL) capacitor
- Patent number 9,252,104
- Issue date Feb 2, 2016
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary back end of line (BEOL) capacitor
- Patent number 8,980,708
- Issue date Mar 17, 2015
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID BACK-END-OF-LINE (BEOL) DIELECTRIC FOR HIGH CAPACITANCE DENS...
- Publication number 20210320059
- Publication date Oct 14, 2021
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS IN A LAYERED ARRANGEMENT
- Publication number 20210313326
- Publication date Oct 7, 2021
- QUALCOMM Incorporated
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL (3D), VERTICALLY-INTEGRATED FIELD-EFFECT TRANSIST...
- Publication number 20210280582
- Publication date Sep 9, 2021
- QUALCOMM Incorporated
- Ye Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanosheet Transistor Stack
- Publication number 20210005604
- Publication date Jan 7, 2021
- QUALCOMM Incorporated
- Lixin GE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY IMPLEMENTED USING NEGATIVE CAPACITANCE MATERIAL
- Publication number 20200126995
- Publication date Apr 23, 2020
- QUALCOMM Incorporated
- Lixin Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING DIMENSIONS OF A NEGATIVE CAPACITANCE LAYER OF A GATE ST...
- Publication number 20190378904
- Publication date Dec 12, 2019
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FLUORINATED GRAPHENE SPACER
- Publication number 20190221645
- Publication date Jul 18, 2019
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE (MOL) METAL RESISTOR TEMPERATURE SENSORS FOR LOCALI...
- Publication number 20190195700
- Publication date Jun 27, 2019
- QUALCOMM Incorporated
- Lixin Ge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH METAL GATE HAVING DIELECTRIC PORTION OVER I...
- Publication number 20190181137
- Publication date Jun 13, 2019
- QUALCOMM Incorporated
- Ye Lu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MIDDLE-OF-LINE SHIELDED GATE FOR INTEGRATED CIRCUITS
- Publication number 20190103320
- Publication date Apr 4, 2019
- QUALCOMM Incorporated
- Lixin GE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT (SAC) ON GATE FOR IMPROVING METAL OXIDE SEMICO...
- Publication number 20180366592
- Publication date Dec 20, 2018
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH LOW RESISTIVITY CARBON ALLOY
- Publication number 20180342513
- Publication date Nov 29, 2018
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH FLUORINATED GRAPHENE SPACER
- Publication number 20180342585
- Publication date Nov 29, 2018
- QUALCOMM Incorporated
- Ye LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE (MOL) METAL RESISTOR TEMPERATURE SENSORS FOR LOCALI...
- Publication number 20180058943
- Publication date Mar 1, 2018
- QUALCOMM Incorporated
- Lixin Ge
- G01 - MEASURING TESTING
Information Patent Application
COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR
- Publication number 20150028452
- Publication date Jan 29, 2015
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR
- Publication number 20140231957
- Publication date Aug 21, 2014
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIRAL METAL-ON-METAL (SMOM) CAPACITORS, AND RELATED SYSTEMS AND ME...
- Publication number 20140203404
- Publication date Jul 24, 2014
- QUALCOMM Incorporated
- Jihong Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM CAPACITOR AND MIM CAPACITOR FABRICATION FOR SEMICONDUCTOR DEVICES
- Publication number 20140197519
- Publication date Jul 17, 2014
- QUALCOMM Incorporated
- Jihong Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONE FRAME, LOW RESISTANCE VIA COUPLED METAL OXIDE-METAL (MOM) ORTH...
- Publication number 20140092523
- Publication date Apr 3, 2014
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL FINGER CAPACITORS WITH HYBRID METAL FINGER ORIENTATIONS IN ST...
- Publication number 20130320494
- Publication date Dec 5, 2013
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stable SRAM Bitcell Design Utilizing Independent Gate Finfet
- Publication number 20120113708
- Publication date May 10, 2012
- Industry-Academic Cooperation Foundation, Yonsei University
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Application
Low-Power 5T SRAM with Improved Stability and Reduced Bitcell Size
- Publication number 20110235406
- Publication date Sep 29, 2011
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Three-dimensional (3D), vertically-integrated field-effect transist...

Integrated circuit with metal gate having dielectric portion over i...

Controlling dimensions of a negative capacitance layer of a gate st...

Transistor with fluorinated graphene spacer

Transistor with low resistivity carbon alloy

Self-aligned contact (SAC) on gate for improving metal oxide semico...

Transistor with fluorinated graphene spacer

Middle-of-line (MOL) metal resistor temperature sensors for localiz...

Low-power 5T SRAM with improved stability and reduced bitcell size

Stable SRAM bitcell design utilizing independent gate FinFET

High density area efficient thin-oxide decoupling capacitor using c...

Bone frame, low resistance via coupled metal oxide-metal (MOM) orth...

Complementary back end of line (BEOL) capacitor

Complementary back end of line (BEOL) capacitor

Patents Applicationslast 30 patents

HYBRID BACK-END-OF-LINE (BEOL) DIELECTRIC FOR HIGH CAPACITANCE DENS...

TRANSISTORS IN A LAYERED ARRANGEMENT

THREE-DIMENSIONAL (3D), VERTICALLY-INTEGRATED FIELD-EFFECT TRANSIST...

Nanosheet Transistor Stack

MEMORY IMPLEMENTED USING NEGATIVE CAPACITANCE MATERIAL

CONTROLLING DIMENSIONS OF A NEGATIVE CAPACITANCE LAYER OF A GATE ST...

TRANSISTOR WITH FLUORINATED GRAPHENE SPACER

MIDDLE-OF-LINE (MOL) METAL RESISTOR TEMPERATURE SENSORS FOR LOCALI...

INTEGRATED CIRCUIT WITH METAL GATE HAVING DIELECTRIC PORTION OVER I...

MIDDLE-OF-LINE SHIELDED GATE FOR INTEGRATED CIRCUITS

SELF-ALIGNED CONTACT (SAC) ON GATE FOR IMPROVING METAL OXIDE SEMICO...

TRANSISTOR WITH LOW RESISTIVITY CARBON ALLOY

TRANSISTOR WITH FLUORINATED GRAPHENE SPACER

MIDDLE-OF-LINE (MOL) METAL RESISTOR TEMPERATURE SENSORS FOR LOCALI...

COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR

COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR

SPIRAL METAL-ON-METAL (SMOM) CAPACITORS, AND RELATED SYSTEMS AND ME...

MIM CAPACITOR AND MIM CAPACITOR FABRICATION FOR SEMICONDUCTOR DEVICES

BONE FRAME, LOW RESISTANCE VIA COUPLED METAL OXIDE-METAL (MOM) ORTH...

METAL FINGER CAPACITORS WITH HYBRID METAL FINGER ORIENTATIONS IN ST...

Stable SRAM Bitcell Design Utilizing Independent Gate Finfet

Low-Power 5T SRAM with Improved Stability and Reduced Bitcell Size