Liyang Song

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabricating Fin-based split-gate high-drain-voltage transistor by w...
- Patent number 10,256,150
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating fin-based split-gate high-drain-voltage transistor by w...
- Patent number 10,170,368
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating shallow-trench isolation semiconductor devices to reduc...
- Patent number 9,484,402
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating shallow-trench isolation semiconductor devices to reduc...
- Patent number 9,397,158
- Issue date Jul 19, 2016
- GlobalFoundries Inc.
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating shallow-trench isolation semiconductor devices to reduc...
- Patent number 9,059,244
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment for thin body MOSFETs
- Patent number 9,040,399
- Issue date May 26, 2015
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with uniaxial stress channels
- Patent number 8,957,464
- Issue date Feb 17, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of high-performance extremely thin silicon on...
- Patent number 8,927,364
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with uniaxial stress channels
- Patent number 8,633,077
- Issue date Jan 21, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...
- Publication number 20180286760
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...
- Publication number 20180286761
- Publication date Oct 4, 2018
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...
- Publication number 20150194484
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...
- Publication number 20150194334
- Publication date Jul 9, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...
- Publication number 20150102453
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...
- Publication number 20150001625
- Publication date Jan 1, 2015
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH UNIAXIAL STRESS CHANNELS
- Publication number 20140124861
- Publication date May 8, 2014
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING
- Publication number 20130328135
- Publication date Dec 12, 2013
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING
- Publication number 20130330899
- Publication date Dec 12, 2013
- International Business Machines Corporation
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...
- Publication number 20130264653
- Publication date Oct 10, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH UNIAXIAL STRESS CHANNELS
- Publication number 20130207194
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF CONTACT RESISTANCE AND JUNCTION LEAKAGE
- Publication number 20130175632
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Ming CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Threshold Voltage Adjustment For Thin Body Mosfets
- Publication number 20130105896
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS
- Publication number 20130105894
- Publication date May 2, 2013
- International Business Machines Corporation
- MaryJane Brodsky
- H01 - BASIC ELECTRIC ELEMENTS

Liyang Song

Person

Patents Grantslast 30 patents

Fabricating Fin-based split-gate high-drain-voltage transistor by w...

Fabricating fin-based split-gate high-drain-voltage transistor by w...

Fabricating shallow-trench isolation semiconductor devices to reduc...

Fabricating shallow-trench isolation semiconductor devices to reduc...

Fabricating shallow-trench isolation semiconductor devices to reduc...

Threshold voltage adjustment for thin body MOSFETs

Transistors with uniaxial stress channels

Structure and method of high-performance extremely thin silicon on...

Transistors with uniaxial stress channels

Patents Applicationslast 30 patents

FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...

FABRICATING FIN-BASED SPLIT-GATE HIGH-DRAIN-VOLTAGE TRANSISTOR BY W...

Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...

Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...

Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduc...

STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...

TRANSISTORS WITH UNIAXIAL STRESS CHANNELS

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

PREVENTING FULLY SILICIDED FORMATION IN HIGH-K METAL GATE PROCESSING

STRUCTURE AND METHOD OF HIGH-PERFORMANCE EXTREMELY THIN SILICON ON...

TRANSISTORS WITH UNIAXIAL STRESS CHANNELS

REDUCTION OF CONTACT RESISTANCE AND JUNCTION LEAKAGE

Threshold Voltage Adjustment For Thin Body Mosfets

THRESHOLD VOLTAGE ADJUSTMENT FOR THIN BODY MOSFETS