Ljubo Radic

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor with integrated short circuit protection
- Patent number 12,170,254
- Issue date Dec 17, 2024
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base silicide on monocrystalline base structures
- Patent number 12,132,093
- Issue date Oct 29, 2024
- NXP USA, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with termination regions
- Patent number 12,057,499
- Issue date Aug 6, 2024
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a defect layer and method of fabrication...
- Patent number 11,901,414
- Issue date Feb 13, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with monocrystalline base structures
- Patent number 11,855,173
- Issue date Dec 26, 2023
- NXP USA, INC.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,777,002
- Issue date Oct 3, 2023
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided collector structure
- Patent number 11,640,975
- Issue date May 2, 2023
- NXP USA, INC.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor formed with spacer
- Patent number 11,387,348
- Issue date Jul 12, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,329,156
- Issue date May 10, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,282,956
- Issue date Mar 22, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,227,921
- Issue date Jan 18, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench with different transverse cross-sectional widths
- Patent number 11,217,675
- Issue date Jan 4, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor trench with field plate structure
- Patent number 11,075,110
- Issue date Jul 27, 2021
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a base link region and method therefor
- Patent number 11,018,247
- Issue date May 25, 2021
- NXP USA, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with extended drain regions located in trench si...
- Patent number 10,833,174
- Issue date Nov 10, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with gate/field plate structure
- Patent number 10,749,028
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with extended drain region
- Patent number 10,749,023
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die with buried doped isolation region
- Patent number 10,607,880
- Issue date Mar 31, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,600,911
- Issue date Mar 24, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor trench structure with field plate structures
- Patent number 10,600,879
- Issue date Mar 24, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,522,677
- Issue date Dec 31, 2019
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,431,678
- Issue date Oct 1, 2019
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,424,646
- Issue date Sep 24, 2019
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconducting devices with lightly-...
- Patent number 10,418,483
- Issue date Sep 17, 2019
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency coupling and transition structure
- Patent number 10,225,925
- Issue date Mar 5, 2019
- NXP USA, INC.
- Li Qiang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,103,257
- Issue date Oct 16, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having reduced gate-drain capacitance
- Patent number 8,735,978
- Issue date May 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with enclosed void cavities
- Patent number 8,502,287
- Issue date Aug 6, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating semiconductor devices having reduced gate-d...
- Patent number 7,919,388
- Issue date Apr 5, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...
- Publication number 20240204086
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METH...
- Publication number 20240178304
- Publication date May 30, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION
- Publication number 20240113045
- Publication date Apr 4, 2024
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A TRANSISTOR WITH A CONDUCTIVITY DOPED BASE STRU...
- Publication number 20240079473
- Publication date Mar 7, 2024
- NXP USA, Inc.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HEAT DISSIPATION STRUCTURE
- Publication number 20240055314
- Publication date Feb 15, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...
- Publication number 20240030308
- Publication date Jan 25, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BASE SILICIDE ON MONOCRYSTALLINE BASE STRUCTURES
- Publication number 20230395692
- Publication date Dec 7, 2023
- NXP USA, Inc.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MONOCRYSTALLINE BASE STRUCTURES
- Publication number 20230187527
- Publication date Jun 15, 2023
- NXP USA, Inc.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A DEFECT LAYER AND METHOD OF FABRICATION...
- Publication number 20230081675
- Publication date Mar 16, 2023
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDED COLLECTOR STRUCTURE
- Publication number 20220406906
- Publication date Dec 22, 2022
- NXP USA, Inc.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20220093752
- Publication date Mar 24, 2022
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS
- Publication number 20210305385
- Publication date Sep 30, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20210184034
- Publication date Jun 17, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FORMED WITH SPACER
- Publication number 20210159323
- Publication date May 27, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20210159319
- Publication date May 27, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH TERMINATION REGIONS
- Publication number 20210126125
- Publication date Apr 29, 2021
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITOR WITH GATE/FIELD PLATE STRUCTURE
- Publication number 20200176599
- Publication date Jun 4, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH EXTENDED DRAIN REGIONS LOCATED IN TRENCH SI...
- Publication number 20200135896
- Publication date Apr 30, 2020
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20200135916
- Publication date Apr 30, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH CONTROL-TERMINAL FIELD PLATE STRUCTURES IN...
- Publication number 20200098912
- Publication date Mar 26, 2020
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE WITH BURIED DOPED ISOLATION REGION
- Publication number 20200075393
- Publication date Mar 5, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR TRENCH STRUCTURE WITH FIELD PLATE STRUCTURES
- Publication number 20190280094
- Publication date Sep 12, 2019
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination Design For Trench Superjunction Power MOSFET
- Publication number 20190148541
- Publication date May 16, 2019
- NXP USA, Inc.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR
- Publication number 20190097045
- Publication date Mar 28, 2019
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR
- Publication number 20190097003
- Publication date Mar 28, 2019
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR
- Publication number 20190097046
- Publication date Mar 28, 2019
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...
- Publication number 20180151723
- Publication date May 31, 2018
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY COUPLING AND TRANSITION STRUCTURE
- Publication number 20170048969
- Publication date Feb 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- LI QIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE
- Publication number 20110147835
- Publication date Jun 23, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH ENCLOSED VOID CAVITIES
- Publication number 20110024806
- Publication date Feb 3, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS

Ljubo Radic

Person

Patents Grantslast 30 patents

Transistor with integrated short circuit protection

Base silicide on monocrystalline base structures

Semiconductor device with extrinsic base region and method of fabri...

Transistor devices with termination regions

Semiconductor device with a defect layer and method of fabrication...

Transistor with monocrystalline base structures

Laterally-diffused metal-oxide semiconductor transistor and method...

Silicided collector structure

Transistor formed with spacer

Transistor with extended drain region

Transistor with extended drain region

Laterally-diffused metal-oxide semiconductor transistor and method...

Trench with different transverse cross-sectional widths

Transistor trench with field plate structure

Semiconductor device with a base link region and method therefor

Transistor devices with extended drain regions located in trench si...

Transistor with gate/field plate structure

Vertical transistor with extended drain region

Die with buried doped isolation region

Field-effect transistor and method therefor

Transistor trench structure with field plate structures

Field-effect transistor and method therefor

Termination design for trench superjunction power MOSFET

Field-effect transistor and method therefor

Laterally diffused metal oxide semiconducting devices with lightly-...

Radio frequency coupling and transition structure

Termination design for trench superjunction power MOSFET

Semiconductor devices having reduced gate-drain capacitance

Semiconductor devices with enclosed void cavities

Methods for fabricating semiconductor devices having reduced gate-d...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...

SEMICONDUCTOR DEVICE WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METH...

TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION

METHOD FOR FORMING A TRANSISTOR WITH A CONDUCTIVITY DOPED BASE STRU...

TRANSISTOR HEAT DISSIPATION STRUCTURE

SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...

BASE SILICIDE ON MONOCRYSTALLINE BASE STRUCTURES

TRANSISTOR WITH MONOCRYSTALLINE BASE STRUCTURES

SEMICONDUCTOR DEVICE WITH A DEFECT LAYER AND METHOD OF FABRICATION...

SILICIDED COLLECTOR STRUCTURE

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS

TRANSISTOR WITH EXTENDED DRAIN REGION

TRANSISTOR FORMED WITH SPACER

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

TRANSISTOR DEVICES WITH TERMINATION REGIONS

TRANSITOR WITH GATE/FIELD PLATE STRUCTURE

TRANSISTOR DEVICES WITH EXTENDED DRAIN REGIONS LOCATED IN TRENCH SI...

VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION

TRANSISTOR DEVICES WITH CONTROL-TERMINAL FIELD PLATE STRUCTURES IN...

DIE WITH BURIED DOPED ISOLATION REGION

TRANSISTOR TRENCH STRUCTURE WITH FIELD PLATE STRUCTURES

Termination Design For Trench Superjunction Power MOSFET

FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR

FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR

FIELD-EFFECT TRANSISTOR AND METHOD THEREFOR

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-...

RADIO FREQUENCY COUPLING AND TRANSITION STRUCTURE

SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE

SEMICONDUCTOR DEVICES WITH ENCLOSED VOID CAVITIES