Louis D. Lanzerotti

Person

Burlington, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple patterning with mandrel cuts defined by block masks
- Patent number 11,417,525
- Issue date Aug 16, 2022
- GLOBALFOUNDRIES U.S. INC.
- Martin O'Toole
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 8,030,167
- Issue date Oct 4, 2011
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacture
- Patent number 8,022,496
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion field effect transistor with a trench field plate
- Patent number 7,956,412
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,713,829
- Issue date May 11, 2010
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied impurity profile region formation for varying breakdown volt...
- Patent number 7,550,787
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming channel stop for deep trench isolation prior to...
- Patent number 7,491,614
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through via in ultra high resistivity wafer and related methods
- Patent number 7,485,965
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NFET and PFET devices and methods of fabricating same
- Patent number 7,374,988
- Issue date May 20, 2008
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacture
- Patent number 7,329,940
- Issue date Feb 12, 2008
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method having multiple subcollectors forme...
- Patent number 7,303,968
- Issue date Dec 4, 2007
- International Business Machines Corporation
- James S. Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor with carbon inc...
- Patent number 7,202,136
- Issue date Apr 10, 2007
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 7,173,274
- Issue date Feb 6, 2007
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor with carbon inc...
- Patent number 7,138,669
- Issue date Nov 21, 2006
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NFET and PFET devices and methods of fabricating same
- Patent number 7,078,722
- Issue date Jul 18, 2006
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method having multiple subcollectors forme...
- Patent number 7,064,416
- Issue date Jun 20, 2006
- International Business Machines Corporation
- James S. Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,900,519
- Issue date May 31, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused extrinsic base and method for fabrication
- Patent number 6,869,854
- Issue date Mar 22, 2005
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with in-situ doped, raised source and drain structures
- Patent number 6,858,903
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Patent number 6,858,532
- Issue date Feb 22, 2005
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained Fin FETs structure and method
- Patent number 6,849,884
- Issue date Feb 1, 2005
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Patent number 6,815,802
- Issue date Nov 9, 2004
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial base bipolar transistor with raised extrinsic base
- Patent number 6,812,545
- Issue date Nov 2, 2004
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of MOSFET device with in-situ doped, raised s...
- Patent number 6,774,000
- Issue date Aug 10, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fin FETs structure and method
- Patent number 6,767,793
- Issue date Jul 27, 2004
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor with carbon inc...
- Patent number 6,670,654
- Issue date Dec 30, 2003
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for implanting a deep subcollector with self-aligned photo...
- Patent number 6,656,815
- Issue date Dec 2, 2003
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained fin FETs structure and method
- Patent number 6,635,909
- Issue date Oct 21, 2003
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an epitaxial base bipolar transistor with ra...
- Patent number 6,617,220
- Issue date Sep 9, 2003
- International Business Machines Corporation
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench-buried layer array and integrated device structures for...
- Patent number 6,600,199
- Issue date Jul 29, 2003
- International Business Machines Corporation
- Steven H. Voldman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTIPLE PATTERNING WITH MANDREL CUTS DEFINED BY BLOCK MASKS
- Publication number 20200111668
- Publication date Apr 9, 2020
- GLOBALFOUNDRIES INC.
- Martin O'Toole
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE
- Publication number 20090140343
- Publication date Jun 4, 2009
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...
- Publication number 20090057815
- Publication date Mar 5, 2009
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH VIA IN ULTRA HIGH RESISTIVITY WAFER AND RELATED METHODS
- Publication number 20080290524
- Publication date Nov 27, 2008
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...
- Publication number 20080124881
- Publication date May 29, 2008
- International Business Machines Corporation
- Jack Ooh Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20080099787
- Publication date May 1, 2008
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20070275534
- Publication date Nov 29, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF REFRACTORY METAL REACH THROUGH IN BIPOLAR T...
- Publication number 20070205430
- Publication date Sep 6, 2007
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20070096257
- Publication date May 3, 2007
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...
- Publication number 20060270203
- Publication date Nov 30, 2006
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING
- Publication number 20060234484
- Publication date Oct 19, 2006
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NFET and PFET devices and methods of fabricating same
- Publication number 20060160292
- Publication date Jul 20, 2006
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method having multiple subcollectors forme...
- Publication number 20060157824
- Publication date Jul 20, 2006
- International Business Machines Corporation
- James S. Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...
- Publication number 20060154440
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-MOBILITY BULK SILICON PFET
- Publication number 20060060856
- Publication date Mar 23, 2006
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon germanium heterojunction bipolar transistor with carbon inc...
- Publication number 20050233534
- Publication date Oct 20, 2005
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporation of carbon in silicon/silicon germanium epitaxial laye...
- Publication number 20050054171
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Jack Oon Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon germanium heterojunction bipolar transistor with carbon inc...
- Publication number 20050051798
- Publication date Mar 10, 2005
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low defect pre-emitter and pre-base oxide etch for bipolar transist...
- Publication number 20040110354
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of MOSFET device with in-situ doped, raised s...
- Publication number 20040097047
- Publication date May 20, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused extrinsic base and method for fabrication
- Publication number 20040014271
- Publication date Jan 22, 2004
- International Business Machines Corporation
- Marc W. Cantell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained fin fets structure and method
- Publication number 20030201458
- Publication date Oct 30, 2003
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial base bipolar transistor with raised extrinsic base
- Publication number 20030201517
- Publication date Oct 30, 2003
- James Stuart Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FIN FETS STRUCTURE AND METHOD
- Publication number 20030178677
- Publication date Sep 25, 2003
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained fin FETs structure and method
- Publication number 20030178681
- Publication date Sep 25, 2003
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon germanium heterojunction bipolar transistor with carbon inc...
- Publication number 20030129802
- Publication date Jul 10, 2003
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method having multiple subcollectors forme...
- Publication number 20030094673
- Publication date May 22, 2003
- International Business Machines Corporation
- James S. Dunn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-self-aligned SiGe heterojunction bipolar transistor
- Publication number 20020197807
- Publication date Dec 26, 2002
- International Business Machines Corporation
- Basanth Jagannathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for utilizing tungsten barrier in contacts to silicide and s...
- Publication number 20020175413
- Publication date Nov 28, 2002
- International Business Machines Corporation
- Louis D. Lanzerotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for implanting a deep subcollector with self-aligned photo...
- Publication number 20020146889
- Publication date Oct 10, 2002
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Louis D. Lanzerotti

Person

Patents Grantslast 30 patents

Multiple patterning with mandrel cuts defined by block masks

Varied impurity profile region formation for varying breakdown volt...

Semiconductor structure and method of manufacture

Lateral diffusion field effect transistor with a trench field plate

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Varied impurity profile region formation for varying breakdown volt...

Methods for forming channel stop for deep trench isolation prior to...

Through via in ultra high resistivity wafer and related methods

NFET and PFET devices and methods of fabricating same

Semiconductor structure and method of manufacture

Semiconductor device and method having multiple subcollectors forme...

Silicon germanium heterojunction bipolar transistor with carbon inc...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Silicon germanium heterojunction bipolar transistor with carbon inc...

NFET and PFET devices and methods of fabricating same

Semiconductor device and method having multiple subcollectors forme...

Diffused extrinsic base and method for fabrication

Diffused extrinsic base and method for fabrication

MOSFET device with in-situ doped, raised source and drain structures

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Strained Fin FETs structure and method

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Epitaxial base bipolar transistor with raised extrinsic base

Method of manufacture of MOSFET device with in-situ doped, raised s...

Strained fin FETs structure and method

Silicon germanium heterojunction bipolar transistor with carbon inc...

Process for implanting a deep subcollector with self-aligned photo...

Strained fin FETs structure and method

Method for fabricating an epitaxial base bipolar transistor with ra...

Deep trench-buried layer array and integrated device structures for...

Patents Applicationslast 30 patents

MULTIPLE PATTERNING WITH MANDREL CUTS DEFINED BY BLOCK MASKS

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE

FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...

THROUGH VIA IN ULTRA HIGH RESISTIVITY WAFER AND RELATED METHODS

INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYE...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

METHOD AND STRUCTURE OF REFRACTORY METAL REACH THROUGH IN BIPOLAR T...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

VARIED IMPURITY PROFILE REGION FORMATION FOR VARYING BREAKDOWN VOLT...

METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING

NFET and PFET devices and methods of fabricating same

Semiconductor device and method having multiple subcollectors forme...

FORMING CHANNEL STOP FOR DEEP TRENCH ISOLATION PRIOR TO DEEP TRENCH...

HIGH-MOBILITY BULK SILICON PFET

Silicon germanium heterojunction bipolar transistor with carbon inc...

Incorporation of carbon in silicon/silicon germanium epitaxial laye...

Silicon germanium heterojunction bipolar transistor with carbon inc...

Low defect pre-emitter and pre-base oxide etch for bipolar transist...

Method of manufacture of MOSFET device with in-situ doped, raised s...

Diffused extrinsic base and method for fabrication

Strained fin fets structure and method

Epitaxial base bipolar transistor with raised extrinsic base

STRAINED FIN FETS STRUCTURE AND METHOD

Strained fin FETs structure and method

Silicon germanium heterojunction bipolar transistor with carbon inc...

Semiconductor device and method having multiple subcollectors forme...

Non-self-aligned SiGe heterojunction bipolar transistor

Method for utilizing tungsten barrier in contacts to silicide and s...

Process for implanting a deep subcollector with self-aligned photo...