Lu Fei

Person

St. Louis, MO, US

People

Patents Grantslast 30 patents

Information Patent Grant
High resistivity semiconductor-on-insulator wafer and a method of m...
- Patent number 10,483,152
- Issue date Nov 19, 2019
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to delineate crystal related defects
- Patent number 9,343,379
- Issue date May 17, 2016
- SunEdison Semiconductor Limited
- Jeffrey L. Libbert
- G01 - MEASURING TESTING
Information Patent Grant
Methods for producing silicon on insulator structures having high r...
- Patent number 8,846,493
- Issue date Sep 30, 2014
- SunEdison Semiconductor Limited
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for monitoring the amount of metal contamination in a process
- Patent number 8,822,242
- Issue date Sep 2, 2014
- Sunedison Semiconductor Limited (UEN201334164H)
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for reducing the width of the unbonded region in SOI struct...
- Patent number 8,440,541
- Issue date May 14, 2013
- MEMC Electronic Materials, Inc.
- John A. Pitney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafers with reduced roll-off and bonded and unbonded...
- Patent number 8,330,245
- Issue date Dec 11, 2012
- MEMC Electronic Materials, Inc.
- John A. Pitney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for monitoring the amount of contamination imparted into se...
- Patent number 8,143,078
- Issue date Mar 27, 2012
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal silicon wafer having an epitaxial layer substantiall...
- Patent number 7,097,718
- Issue date Aug 29, 2006
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial wafer substantially free of grown-in defects
- Patent number 6,565,649
- Issue date May 20, 2003
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial silicon wafers substantially free of grown-in defects
- Patent number 6,284,039
- Issue date Sep 4, 2001
- MEMC Electronic Materials, Inc.
- Luciano Mule'Stagno
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
HIGH RESISTIVITY SEMICONDUCTOR-ON-INSULATOR WAFER AND A METHOD OF M...
- Publication number 20190139818
- Publication date May 9, 2019
- GlobalWafers Co., Ltd.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTIVITY SEMICONDUCTOR-IN-INSULATOR WAFER AND A METHOD OF M...
- Publication number 20170316968
- Publication date Nov 2, 2017
- SunEdison Semiconductor Limited (UEN201334164H)
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO DELINEATE CRYSTAL RELATED DEFECTS
- Publication number 20140327112
- Publication date Nov 6, 2014
- SUNEDISON, INC.
- Jeffrey L. Libbert
- G01 - MEASURING TESTING
Information Patent Application
SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN...
- Publication number 20120235283
- Publication date Sep 20, 2012
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING SILICON ON INSULATOR STRUCTURES HAVING HIGH R...
- Publication number 20120238070
- Publication date Sep 20, 2012
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IN A PROCESS
- Publication number 20120115258
- Publication date May 10, 2012
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IMPARTED I...
- Publication number 20110212547
- Publication date Sep 1, 2011
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DETECTING METAL PRECIPITATES IN A SEMICONDUCTOR WAFER
- Publication number 20110212550
- Publication date Sep 1, 2011
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFERS WITH REDUCED ROLL-OFF AND BONDED AND UNBONDED...
- Publication number 20110204471
- Publication date Aug 25, 2011
- MEMC Electronic Materials, Inc.
- John A. Pitney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REDUCING THE WIDTH OF THE UNBONDED REGION IN SOI STRUCT...
- Publication number 20110207246
- Publication date Aug 25, 2011
- MEMC Electronic Materials, Inc.
- John A. Pitney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MONITORING THE AMOUNT OF CONTAMINATION IMPARTED INTO SE...
- Publication number 20110151592
- Publication date Jun 23, 2011
- MEMC Electronic Materials, Inc.
- Jeffrey L. Libbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON ON INSULATOR (SSOI) WITH LAYER TRANSFER FROM OXIDI...
- Publication number 20070117350
- Publication date May 24, 2007
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR THE MANUFACTURE OF A STRAINED SILICON-ON-INSULATOR STRUC...
- Publication number 20070045738
- Publication date Mar 1, 2007
- MEMC Electronic Materials, Inc.
- Andrew M. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTA...
- Publication number 20070042566
- Publication date Feb 22, 2007
- MEMC Electronic Materials, Inc.
- Michael R. Seacrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single crystal silicon wafer having an epitaxial layer substantiall...
- Publication number 20030205191
- Publication date Nov 6, 2003
- MEMC Electronic Materials, Inc.
- Luciano Mule ' Stagno
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for calibrating nanotopographic measuring equipment
- Publication number 20020185053
- Publication date Dec 12, 2002
- Lu Fei
- G01 - MEASURING TESTING
Information Patent Application
Silicon wafers substantially free of oxidation induced stacking faults
- Publication number 20020084451
- Publication date Jul 4, 2002
- Thomas C. Mohr
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial silicon wafers substantially free of grown-in defects
- Publication number 20010039916
- Publication date Nov 15, 2001
- Luciano Mule' Stagno
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

High resistivity semiconductor-on-insulator wafer and a method of m...

Method to delineate crystal related defects

Methods for producing silicon on insulator structures having high r...

Methods for monitoring the amount of metal contamination in a process

Methods for reducing the width of the unbonded region in SOI struct...

Semiconductor wafers with reduced roll-off and bonded and unbonded...

Methods for monitoring the amount of contamination imparted into se...

Single crystal silicon wafer having an epitaxial layer substantiall...

Epitaxial wafer substantially free of grown-in defects

Epitaxial silicon wafers substantially free of grown-in defects

Patents Applicationslast 30 patents

HIGH RESISTIVITY SEMICONDUCTOR-ON-INSULATOR WAFER AND A METHOD OF M...

HIGH RESISTIVITY SEMICONDUCTOR-IN-INSULATOR WAFER AND A METHOD OF M...

METHOD TO DELINEATE CRYSTAL RELATED DEFECTS

SILICON ON INSULATOR STRUCTURES HAVING HIGH RESISTIVITY REGIONS IN...

METHODS FOR PRODUCING SILICON ON INSULATOR STRUCTURES HAVING HIGH R...

METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IN A PROCESS

METHODS FOR MONITORING THE AMOUNT OF METAL CONTAMINATION IMPARTED I...

METHODS FOR DETECTING METAL PRECIPITATES IN A SEMICONDUCTOR WAFER

SEMICONDUCTOR WAFERS WITH REDUCED ROLL-OFF AND BONDED AND UNBONDED...

METHODS FOR REDUCING THE WIDTH OF THE UNBONDED REGION IN SOI STRUCT...

METHODS FOR MONITORING THE AMOUNT OF CONTAMINATION IMPARTED INTO SE...

STRAINED SILICON ON INSULATOR (SSOI) WITH LAYER TRANSFER FROM OXIDI...

METHOD FOR THE MANUFACTURE OF A STRAINED SILICON-ON-INSULATOR STRUC...

STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTA...

Single crystal silicon wafer having an epitaxial layer substantiall...

Method for calibrating nanotopographic measuring equipment

Silicon wafers substantially free of oxidation induced stacking faults

Epitaxial silicon wafers substantially free of grown-in defects