Claims
- 1. A single crystal silicon wafer, the wafer characterized by a diameter of at least about 150 mm, a resistivity that is less than about 0.03 Ω·cm, being vacancy-dominated and being substantially free oxidation induced stacking faults.
- 2. The single crystal silicon wafer as set forth in claim 1 wherein the resistivity is about 0.03 Ω·cm to about 0.01 Ω·cm.
- 3. The single crystal silicon wafer as set forth in claim 1 wherein the resistivity is about 0.01 Ω·cm to about 0.005 Ω·cm.
- 4. The single crystal silicon wafer as set forth in claim 1 wherein the wafer has a concentration of oxygen of up to about 18 ppma.
- 5. The single crystal silicon wafer as set forth in claim 1 wherein the wafer has a concentration of oxygen of about 10 ppma to about 16 ppma.
- 6. The single crystal silicon wafer as set forth in claim 1 wherein the diameter is about 200 mm.
- 7. The single crystal silicon wafer as set forth in claim 1 wherein the diameter is about 300 mm.
- 8. The single crystal silicon wafer as set forth in claim 1 wherein the wafer comprises dopant atoms selected from the group consisting of boron, aluminum, gallium and indium.
- 9. The single crystal wafer as set forth in claim 1 wherein the wafer comprises boron atoms.
- 10. The single crystal wafer as set forth in claim 9 wherein the concentration of boron atoms is about 1×1019 atoms/cm3 to about 3×1019 atoms/cm3.
- 11. An epitaxial wafer comprising:
a single crystal silicon substrate that has a diameter of at least about 150 mm, a resistivity that is less than about 0.03 Ω·cm, which is vacancy-dominated and substantially free of oxidation induced stacking faults; and, an epitaxial layer deposited upon a surface of the substrate, the epitaxial layer being substantially free of grown-in defects.
- 12. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a thickness of about 1 to about 15 microns.
- 13. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a thickness of about 1 to about 10 microns.
- 14. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a thickness of about 1 to about 5 microns.
- 15. The epitaxial wafer as set forth in claim 11 wherein the diameter of the single crystal silicon substrate is about 200 mm.
- 16. The epitaxial wafer as set forth in claim 11 wherein the diameter of the single crystal silicon substrate is about 300 mm.
- 17. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a resistivity of about 100 Ω·cm to about 0.005 Ω·cm.
- 18. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a resistivity of about 20 Ω·cm to about 1 Ω·cm.
- 19. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a resistivity of about 0.03 Ω·cm to about 0.01 Ω·cm.
- 20. The epitaxial wafer as set forth in claim 11 wherein the epitaxial layer has a resistivity of about 0.01 Ω·cm to about 0.005 Ω·cm.
- 21. The epitaxial wafer as set forth in claim 11 wherein the single crystal silicon substrate and the epitaxial layer comprise dopant atoms selected from the group consisting of boron, aluminum, gallium and indium.
- 22. The epitaxial wafer as set forth in claim 11 wherein the single crystal silicon substrate and the epitaxial layer comprise boron atoms.
- 23. The epitaxial wafer as set forth in claim 22 wherein the concentration of boron atoms in the single crystal silicon substrate is about 1×1019 atoms/cm3 to about 3×1019 atoms/cm3.
- 24. The epitaxial wafer as set forth in claim 22 wherein the concentration of boron atoms in the epitaxial layer is about 3×1017 atoms/cm3 to about 3×1019 atoms/cm3.
- 25. The epitaxial wafer as set forth in claim 22 wherein the concentration of boron atoms in the epitaxial layer is about 1×1019 atoms/cm3 to about 3×1019 atoms/cm3.
- 26. A single crystal silicon ingot having a central axis, a seed-cone, an end-cone, and a constant diameter portion between the seed-cone and the end-cone having a circumferential edge and a radius extending at least about 75 mm from the central axis to the circumferential edge, the single crystal silicon ingot being characterized in that after the ingot is grown and cooled from the solidification temperature, the constant diameter portion contains a generally cylindrical region that has a resistivity that is less than about 0.03 Ω·cm, is vacancy-dominated and is substantially free of oxidation induced stacking faults wherein the generally cylindrical region has a width equal to that of the constant diameter portion of the ingot and has a length, measured along the central axis, of at least about 20% of the length of the constant diameter portion of the ingot.
- 27. The single crystal silicon ingot as set forth in claim 26 wherein the radius of the constant diameter portion is at least about 100 mm.
- 28. The single crystal silicon ingot as set forth in claim 26 wherein the radius of the constant diameter portion is at least about 150 mm.
- 29. The single crystal silicon ingot as set forth in claim 26 wherein the length of the generally cylindrical region is at least about 40% of the length of the constant diameter portion of the ingot.
- 30. The single crystal silicon ingot as set forth in claim 26 wherein the length of the generally cylindrical region is at least about 60% of the length of the constant diameter portion of the ingot.
- 31. The single crystal silicon ingot as set forth in claim 26 wherein the length of the generally cylindrical region is at least about 80% of the length of the constant diameter portion of the ingot.
- 32. The single crystal silicon ingot as set forth in claim 26 wherein the length of the generally cylindrical region is about 100% of the length of the constant diameter portion of the ingot.
- 33. The single crystal silicon ingot as set forth in claim 26 wherein the generally cylindrical region has a concentration of oxygen of up to about 18 ppma.
- 34. The single crystal silicon ingot as set forth in claim 26 wherein the generally cylindrical region has a concentration of oxygen of about 10 ppma to about 16 ppma.
- 35. The single crystal silicon ingot as set forth in claim 26 wherein the generally cylindrical region has a resistivity of about 0.03 Ω·cm to about 0.01 Ω·cm.
- 36. The single crystal silicon ingot as set forth in claim 26 wherein the generally cylindrical region has a resistivity of about 0.01 Ω·cm to about 0.005 Ω·cm.
- 37. The single crystal silicon ingot as set forth in claim 26 wherein the ingot comprises dopant atoms selected from the group consisting of boron, aluminum, gallium and indium.
- 38. The single crystal silicon ingot as set forth in claim 26 wherein the ingot comprises boron atoms.
- 39. The single crystal silicon ingot as set forth in claim 38 wherein the concentration of boron atoms is about 1×1019 atoms/cm3 to about 3×1019 atoms/cm3.
- 40. A process for growing a single crystal silicon ingot in which the ingot comprises a central axis, a seed-cone, an end-cone and a constant diameter portion between the seed-cone and the end-cone having a circumferential edge and a radius of at least about 75 mm extending from the central axis to the circumferential edge, the ingot having a resistivity less than about 0.03 Ω·cm, the ingot being grown from a silicon melt and then cooled from the solidification temperature in accordance with the Czochralski method, the process comprising:
controlling a growth velocity, v, and an average axial temperature gradient, G0, during the growth of the constant diameter portion of the crystal over the temperature range from solidification to a temperature of no less than about 1325° C., to cause the formation of an generally cylindrical region in which vacancies, upon cooling of the ingot from the solidification temperature, are the predominant intrinsic point defect and the generally cylindrical region has a width equal to that of constant diameter portion of the ingot.
- 41. The process as set forth in claim 40 wherein the generally cylindrical region has a length of at least about 40% of the length of the constant diameter portion of the ingot.
- 42. The process as set forth in claim 40 wherein the generally cylindrical region has a length of at least about 60% of the length of the constant diameter portion of the ingot.
- 43. The process as set forth in claim 40 wherein the generally cylindrical region has a length of at least about 80% of the length of the constant diameter portion of the ingot.
- 44. The process as set forth in claim 40 wherein the generally cylindrical region has a length of about 100% of the length of the constant diameter portion of the ingot.
- 45. The process as set forth in claim 40 wherein the radius of the constant diameter portion of the ingot is about 100 mm.
- 46. The process as set forth in claim 40 wherein the radius of the constant diameter portion of the ingot is about 150 mm.
- 47. The process as set forth in claim 40 wherein the generally cylindrical region has a concentration of oxygen of up to about 18 ppma.
- 48. The process as set forth in claim 40 wherein the generally cylindrical region has a concentration of oxygen of about 10 ppma to about 16 ppma.
- 49. The process as set forth in claim 40 wherein the growth velocity, v, and the average axial temperature gradient, G0, are controlled such that a ratio, v/G0, at the circumferential edge, v/G0(rce), ranges in value from about 1.0 to about 3.0 times the critical value of v/G0.
- 50. The process as set forth in claim 40 wherein the growth velocity, v, and the average axial temperature gradient, G0, are controlled such that a ratio, v/G0, at the circumferential edge, v/G0(rce), ranges in value from about 2.0 to about 2.75 times the critical value of v/G0.
- 51. The process as set forth in claim 40 wherein the growth velocity, v, and the average axial temperature gradient, G0, are controlled such that a ratio, v/G0, at the circumferential edge, v/G0(rce), ranges in value from about 2.1 to about 2.6 times the critical value of v/G0.
- 52. The process as set forth in claim 40 wherein the crystal has a nominal diameter of about 150 mm and wherein the growth velocity, v, and the average axial temperature gradient, G0, are controlled such that a ratio, v/G0, at the circumferential edge, v/G0 (rce), is greater than about 4.2×10−5 cm2/sK.
- 53. The process as set forth in claim 40 wherein the ingot comprises dopant atoms selected from the group consisting of boron, aluminum, gallium and indium.
- 54. The process as set forth in claim 40 wherein the ingot comprises boron atoms.
- 55. The process as set forth in claim 54 wherein the concentration of boron atoms is about 1×1019 atoms/cm3 to about 3×1019 atoms/cm3.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional Application No. 60/259,000, filed Dec. 29, 2000.
Provisional Applications (1)
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Number |
Date |
Country |
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60259000 |
Dec 2000 |
US |