Luc Thomas

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Integration scheme for three terminal spin-orbit-torque (SOT) switc...
- Patent number 11,895,928
- Issue date Feb 6, 2024
- Headway Technologies, Inc.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,683,994
- Issue date Jun 20, 2023
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for measuring saturation magnetization of magnetic films and...
- Patent number 11,609,296
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 11,569,441
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction devices for magnetic random access me...
- Patent number 11,495,738
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic resonance (FMR) electrical testing apparatus for spin...
- Patent number 11,397,226
- Issue date Jul 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy (PMA) and i...
- Patent number 11,264,566
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimal thickness, low switching voltage magnetic free layers using...
- Patent number 11,264,560
- Issue date Mar 1, 2022
- Headway Technologies, Inc.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...
- Patent number 11,237,240
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...
- Patent number 11,092,661
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride diffusion barrier structure for spintronic applications
- Patent number 10,950,782
- Issue date Mar 16, 2021
- Headway Technologies, Inc.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 10,797,225
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for measuring saturation magnetization of magnetic films and...
- Patent number 10,788,561
- Issue date Sep 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Ferromagnetic resonance (FMR) electrical testing apparatus for spin...
- Patent number 10,761,154
- Issue date Sep 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Grant
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...
- Patent number 10,754,000
- Issue date Aug 25, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,658,577
- Issue date May 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual magnetic tunnel junction devices for magnetic random access me...
- Patent number 10,522,746
- Issue date Dec 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicularly magnetized ferromagnetic layers having an oxide int...
- Patent number 10,475,564
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Luc Thomas
- B24 - GRINDING POLISHING
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,431,736
- Issue date Oct 1, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...
- Patent number 10,401,464
- Issue date Sep 3, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure for reducing film roughness in magnetic devices
- Patent number 10,115,892
- Issue date Oct 30, 2018
- Headway Technologies, Inc.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Grant
Maintaining coercive field after high temperature anneal for magnet...
- Patent number 10,014,465
- Issue date Jul 3, 2018
- Headway Technologies, Inc.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic recording (PMR) write shield design with min...
- Patent number 9,466,319
- Issue date Oct 11, 2016
- Headway Technologies, Inc.
- Yuhui Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic element with perpendicular magnetic anisotropy for high co...
- Patent number 9,425,387
- Issue date Aug 23, 2016
- Headway Technologies, Inc.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple bit nonvolatile memory based on current induced domain wal...
- Patent number 8,934,289
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Anthony J. Annunziata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multiple bit nonvolatile memory based on current induced domain wal...
- Patent number 8,923,039
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Anthony J. Annunziata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method and apparatus for controlled application of Oersted field to...
- Patent number 8,767,432
- Issue date Jul 1, 2014
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Grant
Domain wall motion in perpendicularly magnetized wires having artif...
- Patent number 8,687,415
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Domain wall motion in perpendicularly magnetized wires having magne...
- Patent number 8,638,601
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Stuart Stephen Papworth Parkin
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...
- Publication number 20240379270
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Luc Thomas
- B24 - GRINDING POLISHING
Information Patent Application
Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Me...
- Publication number 20230060687
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20220149272
- Publication date May 12, 2022
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20210175414
- Publication date Jun 10, 2021
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Integration Scheme for Three Terminal Spin-Orbit-Torque (SOT)...
- Publication number 20210104663
- Publication date Apr 8, 2021
- HEADWAY TECHNOLOGIES, INC.
- Jesmin Haq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Measuring Saturation Magnetization of Magnetic Films and...
- Publication number 20210025958
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20210020830
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...
- Publication number 20200403143
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Jodi Mari Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...
- Publication number 20200403149
- Publication date Dec 24, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...
- Publication number 20200393525
- Publication date Dec 17, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Application
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...
- Publication number 20200386840
- Publication date Dec 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200279995
- Publication date Sep 3, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Diffusion Barrier Structure for Spintronic Applications
- Publication number 20200266334
- Publication date Aug 20, 2020
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Me...
- Publication number 20200144488
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Measuring Saturation magnetization of Magnetic Films and...
- Publication number 20200116811
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
- Publication number 20200091408
- Publication date Mar 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...
- Publication number 20200075213
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Luc Thomas
- B24 - GRINDING POLISHING
Information Patent Application
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...
- Publication number 20200049787
- Publication date Feb 13, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20200028073
- Publication date Jan 23, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...
- Publication number 20190331752
- Publication date Oct 31, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Santiago Serrano Guisan
- G01 - MEASURING TESTING
Information Patent Application
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...
- Publication number 20190227132
- Publication date Jul 25, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Guenole Jan
- G01 - MEASURING TESTING
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190140168
- Publication date May 9, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20190088866
- Publication date Mar 21, 2019
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- G11 - INFORMATION STORAGE
Information Patent Application
Maintaining Coercive Field after High Temperature Anneal for Magnet...
- Publication number 20180323371
- Publication date Nov 8, 2018
- HEADWAY TECHNOLOGIES, INC.
- Huanlong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...
- Publication number 20180267128
- Publication date Sep 20, 2018
- HEADWAY TECHNOLOGIES, INC.
- Santiago Serrano Guisan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...
- Publication number 20180005746
- Publication date Jan 4, 2018
- HEADWAY TECHNOLOGIES, INC.
- Luc Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
- Publication number 20170256703
- Publication date Sep 7, 2017
- HEADWAY TECHNOLOGIES, INC.
- Jian Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR CONTROLLED APPLICATION OF OERSTED FIELD TO...
- Publication number 20140160829
- Publication date Jun 12, 2014
- International Business Machines Corporation
- Anthony J. Annunziata
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WAL...
- Publication number 20140126280
- Publication date May 8, 2014
- International Business Machines Corporation
- Anthony J. Annunziata
- B82 - NANO-TECHNOLOGY
Information Patent Application
MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WAL...
- Publication number 20140126281
- Publication date May 8, 2014
- International Business Machines Corporation
- Anthony J. Annunziata
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

Dual magnetic tunnel junction (DMTJ) stack design

Integration scheme for three terminal spin-orbit-torque (SOT) switc...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Method for measuring saturation magnetization of magnetic films and...

Maintaining coercive field after high temperature anneal for magnet...

Dual magnetic tunnel junction devices for magnetic random access me...

Ferromagnetic resonance (FMR) electrical testing apparatus for spin...

Magnetic element with perpendicular magnetic anisotropy (PMA) and i...

Minimal thickness, low switching voltage magnetic free layers using...

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...

Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...

Nitride diffusion barrier structure for spintronic applications

Dual magnetic tunnel junction (DMTJ) stack design

Method for measuring saturation magnetization of magnetic films and...

Ferromagnetic resonance (FMR) electrical testing apparatus for spin...

Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level...

Maintaining coercive field after high temperature anneal for magnet...

Dual magnetic tunnel junction devices for magnetic random access me...

Perpendicularly magnetized ferromagnetic layers having an oxide int...

Maintaining coercive field after high temperature anneal for magnet...

Scanning ferromagnetic resonance (FMR) for wafer-level characteriza...

Multilayer structure for reducing film roughness in magnetic devices

Maintaining coercive field after high temperature anneal for magnet...

Perpendicular magnetic recording (PMR) write shield design with min...

Magnetic element with perpendicular magnetic anisotropy for high co...

Multiple bit nonvolatile memory based on current induced domain wal...

Multiple bit nonvolatile memory based on current induced domain wal...

Method and apparatus for controlled application of Oersted field to...

Domain wall motion in perpendicularly magnetized wires having artif...

Domain wall motion in perpendicularly magnetized wires having magne...

Patents Applicationslast 30 patents

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...

Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Me...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Nitride Diffusion Barrier Structure for Spintronic Applications

Novel Integration Scheme for Three Terminal Spin-Orbit-Torque (SOT)...

Method for Measuring Saturation Magnetization of Magnetic Films and...

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using...

Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and I...

Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...

Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Nitride Diffusion Barrier Structure for Spintronic Applications

Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Me...

Method for Measuring Saturation magnetization of Magnetic Films and...

Dual Magnetic Tunnel Junction (DMTJ) Stack Design

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...

Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level...

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...

Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spin...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

Maintaining Coercive Field after High Temperature Anneal for Magnet...

Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characteriza...

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Int...

Multilayer Structure for Reducing Film Roughness in Magnetic Devices

METHOD AND APPARATUS FOR CONTROLLED APPLICATION OF OERSTED FIELD TO...

MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WAL...

MULTIPLE BIT NONVOLATILE MEMORY BASED ON CURRENT INDUCED DOMAIN WAL...