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Luciano Mule ' Stagno
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St. Louis, MO, US
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Patents Grants
last 30 patents
Information
Patent Grant
Process for making silicon wafers with stabilized oxygen precipitat...
Patent number
7,201,800
Issue date
Apr 10, 2007
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Single crystal silicon wafer having an epitaxial layer substantiall...
Patent number
7,097,718
Issue date
Aug 29, 2006
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Silicon wafers with stabilized oxygen precipitate nucleation center...
Patent number
6,808,781
Issue date
Oct 26, 2004
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for revealing agglomerated intrinsic point defects in semico...
Patent number
6,638,357
Issue date
Oct 28, 2003
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for producing czochralski silicon free of agglomerated self-...
Patent number
6,635,587
Issue date
Oct 21, 2003
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
C30 - CRYSTAL GROWTH
Information
Patent Grant
Epitaxial wafer substantially free of grown-in defects
Patent number
6,565,649
Issue date
May 20, 2003
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Process for detecting agglomerated intrinsic point defects by metal...
Patent number
6,391,662
Issue date
May 21, 2002
MEMC Electronic Materials, Inc.
Luciano Mule′Stagno
C30 - CRYSTAL GROWTH
Information
Patent Grant
Epitaxial silicon wafers substantially free of grown-in defects
Patent number
6,284,039
Issue date
Sep 4, 2001
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
Process for making silicon wafers with stabilized oxygen precipitat...
Publication number
20050048247
Publication date
Mar 3, 2005
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Single crystal silicon wafer having an epitaxial layer substantiall...
Publication number
20030205191
Publication date
Nov 6, 2003
MEMC Electronic Materials, Inc.
Luciano Mule ' Stagno
C30 - CRYSTAL GROWTH
Information
Patent Application
Process for suppressing the nucleation and/or growth of interstitia...
Publication number
20030196587
Publication date
Oct 23, 2003
MEMC Electronic Materials, Inc.
Kirk D. McCallum
C30 - CRYSTAL GROWTH
Information
Patent Application
Ideal oxygen precipitating silicon wafers with nitrogen/carbon stab...
Publication number
20030136961
Publication date
Jul 24, 2003
MEMC Electronic Materials, Inc.
Luciano Mule'Stagno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Silicon wafers substantially free of oxidation induced stacking faults
Publication number
20020084451
Publication date
Jul 4, 2002
Thomas C. Mohr
C30 - CRYSTAL GROWTH
Information
Patent Application
LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON
Publication number
20020007779
Publication date
Jan 24, 2002
LUCIANO MULE'STAGNO
C30 - CRYSTAL GROWTH
Information
Patent Application
Epitaxial silicon wafers substantially free of grown-in defects
Publication number
20010039916
Publication date
Nov 15, 2001
Luciano Mule' Stagno
C30 - CRYSTAL GROWTH