Manfred Horstmann

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a field effect transistor
- Patent number 8,440,516
- Issue date May 14, 2013
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing transistor characteristics by a late deep implantation in...
- Patent number 8,288,256
- Issue date Oct 16, 2012
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for providing stress sources in transistors in close prox...
- Patent number 8,274,120
- Issue date Sep 25, 2012
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drive current adjustment for transistors by local gate engineering
- Patent number 8,188,871
- Issue date May 29, 2012
- Advanced Micro Devices, Inc.
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising isolation trenches inducing differe...
- Patent number 8,138,571
- Issue date Mar 20, 2012
- GLOBALFOUNDRIES Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing lithography capabilities during gate formation...
- Patent number 8,101,512
- Issue date Jan 24, 2012
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer of reduced thickness for patterning a dielectric ma...
- Patent number 8,097,542
- Issue date Jan 17, 2012
- GLOBALFOUNDRIES Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising NMOS and PMOS transistors with embe...
- Patent number 8,039,335
- Issue date Oct 18, 2011
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing defects of gate of CMOS devices during cleaning...
- Patent number 8,039,338
- Issue date Oct 18, 2011
- GLOBALFOUNDRIES Inc.
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strain source using silicon/germanium in globally strained...
- Patent number 7,999,326
- Issue date Aug 16, 2011
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device comprising SOI transi...
- Patent number 7,955,937
- Issue date Jun 7, 2011
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress transfer in an interlayer dielectric by providing a stressed...
- Patent number 7,906,383
- Issue date Mar 15, 2011
- Advanced Micro Devices, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising NMOS and PMOS transistors with embe...
- Patent number 7,893,503
- Issue date Feb 22, 2011
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having a reduced body potential and a method of form...
- Patent number 7,863,171
- Issue date Jan 4, 2011
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having an embedded strain layer and a reduced floati...
- Patent number 7,829,421
- Issue date Nov 9, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure comprising an implantat...
- Patent number 7,816,199
- Issue date Oct 19, 2010
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded silicon/germanium material on a strained s...
- Patent number 7,763,515
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising NMOS and PMOS transistors with embe...
- Patent number 7,741,167
- Issue date Jun 22, 2010
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stressed etch stop layers of different...
- Patent number 7,732,291
- Issue date Jun 8, 2010
- GLOBALFOUNDRIES Inc.
- Joe Bloomquist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 7,727,827
- Issue date Jun 1, 2010
- GLOBALFOUNDRIES Inc.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor
- Patent number 7,723,195
- Issue date May 25, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strain source using silicon/germanium in globally strained...
- Patent number 7,719,060
- Issue date May 18, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for providing stress sources in transistors in close prox...
- Patent number 7,696,052
- Issue date Apr 13, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an embedded tensile strain layer with reduced off...
- Patent number 7,659,213
- Issue date Feb 9, 2010
- GLOBALFOUNDRIES, INC.
- Andy Wei
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of increasing transistor drive current by recessing an isola...
- Patent number 7,659,170
- Issue date Feb 9, 2010
- GLOBALFOUNDRIES, INC.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of forming a field effect transi...
- Patent number 7,629,211
- Issue date Dec 8, 2009
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved halo structures and a method o...
- Patent number 7,625,802
- Issue date Dec 1, 2009
- Advanced Micro Devices, Inc.
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different embedded strain layers in PMOS and NMOS transistors and a...
- Patent number 7,579,262
- Issue date Aug 25, 2009
- Advanced Micro Devices, Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a stressed dielectric layer based on...
- Patent number 7,563,731
- Issue date Jul 21, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor comprising a stressed channel region and me...
- Patent number 7,556,996
- Issue date Jul 7, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Transistor Comprising an Embedded Sigma-Shaped Semiconductor Alloy...
- Publication number 20120161240
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...
- Publication number 20110104878
- Publication date May 5, 2011
- Advanced Micro Devices, Inc.
- SVEN BEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20100203698
- Publication date Aug 12, 2010
- GLOBALFOUNDRIES INC.
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...
- Publication number 20100187629
- Publication date Jul 29, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...
- Publication number 20100187635
- Publication date Jul 29, 2010
- Advanced Micro Devices, Inc.
- SVEN BEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FIELD EFFECT TRANSISTOR
- Publication number 20100181619
- Publication date Jul 22, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROX...
- Publication number 20100155850
- Publication date Jun 24, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS BY LOCAL GATE ENGINEERING
- Publication number 20100025776
- Publication date Feb 4, 2010
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING DEFECTS OF GATE OF CMOS DEVICES DURING CLEANING...
- Publication number 20090273036
- Publication date Nov 5, 2009
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
- Publication number 20090236667
- Publication date Sep 24, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELECTRIC MA...
- Publication number 20090218629
- Publication date Sep 3, 2009
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...
- Publication number 20090108361
- Publication date Apr 30, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED...
- Publication number 20090057809
- Publication date Mar 5, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...
- Publication number 20090035924
- Publication date Feb 5, 2009
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-BIASING TRANSISTOR STRUCTURE AND AN SRAM CELL HAVING LESS THAN...
- Publication number 20090026521
- Publication date Jan 29, 2009
- Frank Wirbeleit
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCING TRANSISTOR CHARACTERISTICS BY A LATE DEEP IMPLANTATION IN...
- Publication number 20080268625
- Publication date Oct 30, 2008
- Thomas Feudel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20080242040
- Publication date Oct 2, 2008
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EMBEDDED SILICON/GERMANIUM MATERIAL ON A STRAINED S...
- Publication number 20080179628
- Publication date Jul 31, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...
- Publication number 20080099794
- Publication date May 1, 2008
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT EMBEDDED STRAIN LAYERS IN PMOS AND NMOS TRANSISTORS AND A...
- Publication number 20080090349
- Publication date Apr 17, 2008
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
- Publication number 20080079085
- Publication date Apr 3, 2008
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR COMPRISING A STRESSED CHANNEL REGION AND ME...
- Publication number 20080079039
- Publication date Apr 3, 2008
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR HAVING A STRESSED DIELECTRIC LAYER BASED ON...
- Publication number 20080081486
- Publication date Apr 3, 2008
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENHANCING LITHOGRAPHY CAPABILITIES DURING GATE FORMATION...
- Publication number 20080026552
- Publication date Jan 31, 2008
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF FORMING A FIELD EFFECT TRANSI...
- Publication number 20080026531
- Publication date Jan 31, 2008
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING A ROUGHNESS OF A SEMICONDUCTOR SURFACE
- Publication number 20080003783
- Publication date Jan 3, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INCREASING TRANSISTOR DRIVE CURRENT BY RECESSING AN ISOLA...
- Publication number 20070278596
- Publication date Dec 6, 2007
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AF...
- Publication number 20070281472
- Publication date Dec 6, 2007
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a field effect transistor
- Publication number 20070254441
- Publication date Nov 1, 2007
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEMICONDUCTOR DEVICE HAVING STRESSED ETCH STOP LAYERS OF DIFFEREN...
- Publication number 20070254444
- Publication date Nov 1, 2007
- Joe Bloomquist
- H01 - BASIC ELECTRIC ELEMENTS

Manfred Horstmann

Person

Patents Grantslast 30 patents

Method of forming a field effect transistor

Enhancing transistor characteristics by a late deep implantation in...

Technique for providing stress sources in transistors in close prox...

Drive current adjustment for transistors by local gate engineering

Semiconductor device comprising isolation trenches inducing differe...

Method of enhancing lithography capabilities during gate formation...

Etch stop layer of reduced thickness for patterning a dielectric ma...

Semiconductor device comprising NMOS and PMOS transistors with embe...

Method for reducing defects of gate of CMOS devices during cleaning...

Tensile strain source using silicon/germanium in globally strained...

Method for manufacturing semiconductor device comprising SOI transi...

Stress transfer in an interlayer dielectric by providing a stressed...

Semiconductor device comprising NMOS and PMOS transistors with embe...

SOI transistor having a reduced body potential and a method of form...

SOI transistor having an embedded strain layer and a reduced floati...

Method of forming a semiconductor structure comprising an implantat...

Transistor with embedded silicon/germanium material on a strained s...

Semiconductor device comprising NMOS and PMOS transistors with embe...

Semiconductor device having stressed etch stop layers of different...

Method of forming a semiconductor structure

Method of forming a field effect transistor

Tensile strain source using silicon/germanium in globally strained...

Technique for providing stress sources in transistors in close prox...

Transistor having an embedded tensile strain layer with reduced off...

Method of increasing transistor drive current by recessing an isola...

Field effect transistor and method of forming a field effect transi...

Semiconductor device having improved halo structures and a method o...

Different embedded strain layers in PMOS and NMOS transistors and a...

Field effect transistor having a stressed dielectric layer based on...

Field effect transistor comprising a stressed channel region and me...

Patents Applicationslast 30 patents

Transistor Comprising an Embedded Sigma-Shaped Semiconductor Alloy...

SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...

SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...

METHOD OF FORMING A FIELD EFFECT TRANSISTOR

TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROX...

DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS BY LOCAL GATE ENGINEERING

METHOD FOR REDUCING DEFECTS OF GATE OF CMOS DEVICES DURING CLEANING...

SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...

ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELECTRIC MA...

TENSILE STRAIN SOURCE USING SILICON/GERMANIUM IN GLOBALLY STRAINED...

STRESS TRANSFER IN AN INTERLAYER DIELECTRIC BY PROVIDING A STRESSED...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...

SELF-BIASING TRANSISTOR STRUCTURE AND AN SRAM CELL HAVING LESS THAN...

ENHANCING TRANSISTOR CHARACTERISTICS BY A LATE DEEP IMPLANTATION IN...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

TRANSISTOR WITH EMBEDDED SILICON/GERMANIUM MATERIAL ON A STRAINED S...

SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...

DIFFERENT EMBEDDED STRAIN LAYERS IN PMOS AND NMOS TRANSISTORS AND A...

SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...

FIELD EFFECT TRANSISTOR COMPRISING A STRESSED CHANNEL REGION AND ME...

FIELD EFFECT TRANSISTOR HAVING A STRESSED DIELECTRIC LAYER BASED ON...

METHOD OF ENHANCING LITHOGRAPHY CAPABILITIES DURING GATE FORMATION...

FIELD EFFECT TRANSISTOR AND METHOD OF FORMING A FIELD EFFECT TRANSI...

METHOD OF REDUCING A ROUGHNESS OF A SEMICONDUCTOR SURFACE

METHOD OF INCREASING TRANSISTOR DRIVE CURRENT BY RECESSING AN ISOLA...

METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AF...

Method of forming a field effect transistor

A SEMICONDUCTOR DEVICE HAVING STRESSED ETCH STOP LAYERS OF DIFFEREN...