Manfred Ramin

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integration scheme for dual work function metal gates
- Patent number 8,748,246
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 8,409,943
- Issue date Apr 2, 2013
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high-k gate dielectric layer
- Patent number 8,304,333
- Issue date Nov 6, 2012
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial CMP etch stop layer
- Patent number 8,304,342
- Issue date Nov 6, 2012
- Texas Instruments Incorporated
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment with the implant of lanthanides
- Patent number 7,858,459
- Issue date Dec 28, 2010
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lanthanide series metal implant to control work function of metal g...
- Patent number 7,807,522
- Issue date Oct 5, 2010
- Texas Instruments Incorporated
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high-k gate dielectric layer
- Patent number 7,799,669
- Issue date Sep 21, 2010
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of fully silicided gate with oxide barrier on the source/...
- Patent number 7,737,015
- Issue date Jun 15, 2010
- Texas Instruments Incorporated
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped WGe to form dual metal gates
- Patent number 7,629,212
- Issue date Dec 8, 2009
- Texas Instruments Incorporated
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductive device fabricated using a raised layer to silicide t...
- Patent number 7,560,379
- Issue date Jul 14, 2009
- Texas Instruments Incorporated
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integration Scheme for Dual Work Function Metal Gates
- Publication number 20110223754
- Publication date Sep 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20110223757
- Publication date Sep 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER
- Publication number 20110006375
- Publication date Jan 13, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration Scheme for Dual Work Function Metal Gates
- Publication number 20090039439
- Publication date Feb 12, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped WGe to form dual metal gates
- Publication number 20080274598
- Publication date Nov 6, 2008
- Texas Instruments Inc.
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER
- Publication number 20080265336
- Publication date Oct 30, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES
- Publication number 20080261368
- Publication date Oct 23, 2008
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration Scheme for Dual Work Function Metal Gates
- Publication number 20080237743
- Publication date Oct 2, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Ramin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of fully silicided gate with oxide barrier on the source/...
- Publication number 20080206988
- Publication date Aug 28, 2008
- Texas Instruments Inc.
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lanthanide series metal implant to control work function of metal g...
- Publication number 20080160736
- Publication date Jul 3, 2008
- Texas Instruments Inc.
- Husam Alshareef
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial CMP etch stop layer
- Publication number 20080102634
- Publication date May 1, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Michael Francis Pas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductive device fabricated using a raised layer to silicide t...
- Publication number 20070184572
- Publication date Aug 9, 2007
- Texas Instruments, Incorporated
- Puneet Kohli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductive device fabricated using a two step approach to silic...
- Publication number 20070178683
- Publication date Aug 2, 2007
- Texas Instruments, Incorporated
- Manfred B. Ramin
- H01 - BASIC ELECTRIC ELEMENTS

Manfred Ramin

Person

Patents Grantslast 30 patents

Integration scheme for dual work function metal gates

Work function adjustment with the implant of lanthanides

Method of forming a high-k gate dielectric layer

Sacrificial CMP etch stop layer

Work function adjustment with the implant of lanthanides

Lanthanide series metal implant to control work function of metal g...

Method of forming a high-k gate dielectric layer

Formation of fully silicided gate with oxide barrier on the source/...

Doped WGe to form dual metal gates

Semiconductive device fabricated using a raised layer to silicide t...

Patents Applicationslast 30 patents

Integration Scheme for Dual Work Function Metal Gates

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER

Integration Scheme for Dual Work Function Metal Gates

Doped WGe to form dual metal gates

METHOD OF FORMING A HIGH-K GATE DIELECTRIC LAYER

WORK FUNCTION ADJUSTMENT WITH THE IMPLANT OF LANTHANIDES

Integration Scheme for Dual Work Function Metal Gates

Formation of fully silicided gate with oxide barrier on the source/...

Lanthanide series metal implant to control work function of metal g...

Sacrificial CMP etch stop layer

Semiconductive device fabricated using a raised layer to silicide t...

Semiconductive device fabricated using a two step approach to silic...