Marc C. French

Person

Forest Grove, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fabrication of non-planar IGZO devices for improved electrostatics
- Patent number 11,626,519
- Issue date Apr 11, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineering tensile strain buffer in art for high quality Ge channel
- Patent number 11,450,527
- Issue date Sep 20, 2022
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of non-planar IGZO devices for improved electrostatics
- Patent number 10,847,656
- Issue date Nov 24, 2020
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offstate parasitic leakage reduction for tunneling field effect tra...
- Patent number 10,249,742
- Issue date Apr 2, 2019
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 10,008,565
- Issue date Jun 26, 2018
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,691,848
- Issue date Jun 27, 2017
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,490,329
- Issue date Nov 8, 2016
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,159,787
- Issue date Oct 13, 2015
- Intel Corporation
- Willy Rachmady
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Epitaxial film growth on patterned substrate
- Patent number 8,785,907
- Issue date Jul 22, 2014
- Intel Corporation
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 8,748,940
- Issue date Jun 10, 2014
- Intel Corporation
- Willy Rachmady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF NON-PLANAR IGZO DEVICES FOR IMPROVED ELECTROSTATICS
- Publication number 20210050455
- Publication date Feb 18, 2021
- Intel Corporation
- Van H. LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERING TENSILE STRAIN BUFFER IN ART FOR HIGH QUALITY GE CHANNEL
- Publication number 20200066515
- Publication date Feb 27, 2020
- Intel Corporation
- Van H. LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS
- Publication number 20190058043
- Publication date Feb 21, 2019
- Intel Corporation
- Gilbert W. Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NON-PLANAR IGZO DEVICES FOR IMPROVED ELECTROSTATICS
- Publication number 20180366587
- Publication date Dec 20, 2018
- Intel Corporation
- Van H. LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OFFSTATE PARASITIC LEAKAGE REDUCTION FOR TUNNELING FIELD EFFECT TRA...
- Publication number 20180158933
- Publication date Jun 7, 2018
- Intel Corporation
- Van H. LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Uniform Layers Formed with Aspect Ratio Trench Based Processes
- Publication number 20170317187
- Publication date Nov 2, 2017
- Sanaz K. GARDNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20170288019
- Publication date Oct 5, 2017
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20170047401
- Publication date Feb 16, 2017
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices with germanium-rich active layers & doped tra...
- Publication number 20160049476
- Publication date Feb 18, 2016
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20140291772
- Publication date Oct 2, 2014
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE
- Publication number 20140175378
- Publication date Jun 26, 2014
- Niti Goel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRA...
- Publication number 20140167108
- Publication date Jun 19, 2014
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
Soft magnetic layer for on-die inductively coupled wires with high...
- Publication number 20080157911
- Publication date Jul 3, 2008
- Arnel M. Fajardo
- H01 - BASIC ELECTRIC ELEMENTS

Marc C. French

Person

Patents Grantslast 30 patents

Fabrication of non-planar IGZO devices for improved electrostatics

Engineering tensile strain buffer in art for high quality Ge channel

Fabrication of non-planar IGZO devices for improved electrostatics

Offstate parasitic leakage reduction for tunneling field effect tra...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Epitaxial film growth on patterned substrate

Semiconductor devices with germanium-rich active layers and doped t...

Patents Applicationslast 30 patents

FABRICATION OF NON-PLANAR IGZO DEVICES FOR IMPROVED ELECTROSTATICS

ENGINEERING TENSILE STRAIN BUFFER IN ART FOR HIGH QUALITY GE CHANNEL

TRANSISTOR GATE-CHANNEL ARRANGEMENTS

FABRICATION OF NON-PLANAR IGZO DEVICES FOR IMPROVED ELECTROSTATICS

OFFSTATE PARASITIC LEAKAGE REDUCTION FOR TUNNELING FIELD EFFECT TRA...

Uniform Layers Formed with Aspect Ratio Trench Based Processes

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

Semiconductor devices with germanium-rich active layers & doped tra...

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

EPITAXIAL FILM GROWTH ON PATTERNED SUBSTRATE

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRA...

Soft magnetic layer for on-die inductively coupled wires with high...