Mark DeHerrera

Person

Tempe, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Determining bias configuration for write operations in memory to im...
- Patent number 10,923,170
- Issue date Feb 16, 2021
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Grant
Determining bias configuration for write operations in memory to im...
- Patent number 10,262,713
- Issue date Apr 16, 2019
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Grant
Configuration and testing for magnetoresistive memory to ensure lon...
- Patent number 9,543,041
- Issue date Jan 10, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus for pulse testing a MRAM device and method therefore
- Patent number 7,333,360
- Issue date Feb 19, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Mark DeHerrera
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto resistance random access memory element
- Patent number 7,184,300
- Issue date Feb 27, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Bradley N. Engel
- G11 - INFORMATION STORAGE
Information Patent Grant
Triple pulse method for MRAM toggle bit characterization
- Patent number 7,158,407
- Issue date Jan 2, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Nicholas D. Rizzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Cladded conductor for use in a magnetoelectronics device and method...
- Patent number 7,105,363
- Issue date Sep 12, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing power consumption during MRAM writes using multiple curren...
- Patent number 7,088,608
- Issue date Aug 8, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Mark F. DeHerrera
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM element and methods for writing the MRAM element
- Patent number 6,956,763
- Issue date Oct 18, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Bengt J. Akerman
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element with insulating veils and fabricating method thereof
- Patent number 6,912,107
- Issue date Jun 28, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Eugene Youjun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM and methods for reading the MRAM
- Patent number 6,909,631
- Issue date Jun 21, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory device structures and methods...
- Patent number 6,890,770
- Issue date May 10, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Gregory W. Grynkewich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM architecture
- Patent number 6,888,743
- Issue date May 3, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Grant
Cladded conductor for use in a magnetoelectronics device and method...
- Patent number 6,885,074
- Issue date Apr 26, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a magnetic element with insulating veils
- Patent number 6,835,423
- Issue date Dec 28, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Eugene Youjun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory device structures
- Patent number 6,784,510
- Issue date Aug 31, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Gregory W. Grynkewich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sense amplifier and method for performing a read operation in a MRAM
- Patent number 6,760,266
- Issue date Jul 6, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Bradley J. Garni
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of writing to scalable magnetoresistance random access memor...
- Patent number 6,545,906
- Issue date Apr 8, 2003
- Motorola, Inc.
- Leonid Savtchenko
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating thermally stable MTJ cell and apparatus
- Patent number 6,544,801
- Issue date Apr 8, 2003
- Motorola, Inc.
- Jon Slaughter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory device and method of fabricat...
- Patent number 6,518,071
- Issue date Feb 11, 2003
- Motorola, Inc.
- Mark A. Durlam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory having digit lines and bit lines with...
- Patent number 6,430,084
- Issue date Aug 6, 2002
- Motorola, Inc.
- Nicholas D. Rizzo
- G11 - INFORMATION STORAGE
Information Patent Grant
High density MRAM cell array
- Patent number 6,365,419
- Issue date Apr 2, 2002
- Motorola, Inc.
- Mark Durlam
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MTJ MRAM series-parallel architecture
- Patent number 6,331,943
- Issue date Dec 18, 2001
- Motorola, Inc.
- Peter K. Naji
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element with dual magnetic states and fabrication method t...
- Patent number 6,233,172
- Issue date May 15, 2001
- Motorola, Inc.
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
BIAS CONFIGURATION FOR WRITE OPERATIONS IN MEMORY
- Publication number 20170117029
- Publication date Apr 27, 2017
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
CONFIGURATION AND TESTING FOR MAGNETORESISTIVE MEMORY
- Publication number 20160064058
- Publication date Mar 3, 2016
- EVERSPIN TECHNOLOGIES, INC.
- Jason Janesky
- G11 - INFORMATION STORAGE
Information Patent Application
TRIPLE PULSE METHOD FOR MRAM TOGGLE BIT CHARACTERIZATION
- Publication number 20060245242
- Publication date Nov 2, 2006
- Nicholas D. Rizzo
- G11 - INFORMATION STORAGE
Information Patent Application
Cladded conductor for use in a magnetoelectronics device and method...
- Publication number 20050158992
- Publication date Jul 21, 2005
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus for pulse testing a MRAM device and method therefore
- Publication number 20050133822
- Publication date Jun 23, 2005
- Mark DeHerrera
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing power consumption during MRAM writes using multiple curren...
- Publication number 20050128795
- Publication date Jun 16, 2005
- MOTOROLA, INC.
- Mark F. DeHerrera
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM element and methods for writing the MRAM element
- Publication number 20040264238
- Publication date Dec 30, 2004
- Bengt J. Akerman
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive random access memory device structures and methods...
- Publication number 20040257902
- Publication date Dec 23, 2004
- Gregory W. Grynkewich
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic element with insulating veils and fabricating method thereof
- Publication number 20040197579
- Publication date Oct 7, 2004
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
MRAM and methods for reading the MRAM
- Publication number 20040125649
- Publication date Jul 1, 2004
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM architecture
- Publication number 20040125646
- Publication date Jul 1, 2004
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Application
Cladded conductor for use in a magnetoelectronics device and method...
- Publication number 20040099908
- Publication date May 27, 2004
- Mark A. Durlam
- G11 - INFORMATION STORAGE
Information Patent Application
Sense amplifier and method for performing a read operation in a MRAM
- Publication number 20040001383
- Publication date Jan 1, 2004
- Bradley J. Garni
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic element with insulating veils and fabricating method thereof
- Publication number 20030134096
- Publication date Jul 17, 2003
- Eugene Youjun Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of writing to a scalable magnetoresistance random access mem...
- Publication number 20030128603
- Publication date Jul 10, 2003
- Leonid Savtchenko
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF WRITING TO SCALABLE MAGNETORESISTANCE RANDOM ACCESS MEMOR...
- Publication number 20030072174
- Publication date Apr 17, 2003
- Leonid Savtchenko
- G11 - INFORMATION STORAGE

Mark DeHerrera

Person

Patents Grantslast 30 patents

Determining bias configuration for write operations in memory to im...

Determining bias configuration for write operations in memory to im...

Configuration and testing for magnetoresistive memory to ensure lon...

Apparatus for pulse testing a MRAM device and method therefore

Magneto resistance random access memory element

Triple pulse method for MRAM toggle bit characterization

Cladded conductor for use in a magnetoelectronics device and method...

Reducing power consumption during MRAM writes using multiple curren...

MRAM element and methods for writing the MRAM element

Magnetic element with insulating veils and fabricating method thereof

MRAM and methods for reading the MRAM

Magnetoresistive random access memory device structures and methods...

MRAM architecture

Cladded conductor for use in a magnetoelectronics device and method...

Method of fabricating a magnetic element with insulating veils

Magnetoresistive random access memory device structures

Sense amplifier and method for performing a read operation in a MRAM

Method of writing to scalable magnetoresistance random access memor...

Method of fabricating thermally stable MTJ cell and apparatus

Magnetoresistive random access memory device and method of fabricat...

Magnetic random access memory having digit lines and bit lines with...

High density MRAM cell array

MTJ MRAM series-parallel architecture

Magnetic element with dual magnetic states and fabrication method t...

Patents Applicationslast 30 patents

BIAS CONFIGURATION FOR WRITE OPERATIONS IN MEMORY

CONFIGURATION AND TESTING FOR MAGNETORESISTIVE MEMORY

TRIPLE PULSE METHOD FOR MRAM TOGGLE BIT CHARACTERIZATION

Cladded conductor for use in a magnetoelectronics device and method...

Apparatus for pulse testing a MRAM device and method therefore

Reducing power consumption during MRAM writes using multiple curren...

MRAM element and methods for writing the MRAM element

Magnetoresistive random access memory device structures and methods...

Magnetic element with insulating veils and fabricating method thereof

MRAM and methods for reading the MRAM

MRAM architecture

Cladded conductor for use in a magnetoelectronics device and method...

Sense amplifier and method for performing a read operation in a MRAM

Magnetic element with insulating veils and fabricating method thereof

Method of writing to a scalable magnetoresistance random access mem...

METHOD OF WRITING TO SCALABLE MAGNETORESISTANCE RANDOM ACCESS MEMOR...