Mark Dyson

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar device having buried contacts
- Patent number 8,372,723
- Issue date Feb 12, 2013
- Agere Systems LLC
- Mark Dyson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device having improved capacitance
- Patent number 8,106,480
- Issue date Jan 31, 2012
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device having buried contacts
- Patent number 8,049,282
- Issue date Nov 1, 2011
- Agere Systems Inc.
- Mark Dyson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce collector resistance of a bipolar transistor and i...
- Patent number 7,923,340
- Issue date Apr 12, 2011
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve writer leakage in SiGe bipolar device
- Patent number 7,898,038
- Issue date Mar 1, 2011
- Agere Systems, INC
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar device having improved capacitance
- Patent number 7,666,750
- Issue date Feb 23, 2010
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve writer leakage in a SiGe bipolar device
- Patent number 7,557,010
- Issue date Jul 7, 2009
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve performance of a bipolar device using an amorphiz...
- Patent number 7,479,438
- Issue date Jan 20, 2009
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce boron penetration in a SiGe bipolar device
- Patent number 7,456,061
- Issue date Nov 25, 2008
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR DEVICE HAVING BURIED CONTACTS
- Publication number 20110312146
- Publication date Dec 22, 2011
- Mark Dyson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR DEVICE HAVING IMPROVED CAPACITANCE
- Publication number 20100102418
- Publication date Apr 29, 2010
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE COLLECTOR RESISTANCE OF A BIPOLAR TRANSISTOR AND I...
- Publication number 20100065920
- Publication date Mar 18, 2010
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Junction Transistor with a Reduced Collector-Substrate Capa...
- Publication number 20100032766
- Publication date Feb 11, 2010
- Agere Systems Inc.
- Alan Sangone Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE WRITER LEAKAGE IN SiGe BIPOLAR DEVICE
- Publication number 20090236668
- Publication date Sep 24, 2009
- LSI Corporation
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE BORON PENETRATION IN A SiGe BIPOLAR DEVICE
- Publication number 20090050977
- Publication date Feb 26, 2009
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Reduce Boron Penetration in a SiGe Bipolar Device
- Publication number 20080237642
- Publication date Oct 2, 2008
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Improve Writer Leakage in a SiGe Bipolar Device
- Publication number 20080191246
- Publication date Aug 14, 2008
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR DEVICE HAVING BURIED CONTACTS
- Publication number 20080076228
- Publication date Mar 27, 2008
- Agere Systems Inc.
- Mark Dyson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar Device Having Improved Capacitance
- Publication number 20080064177
- Publication date Mar 13, 2008
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Improve Performance of a Bipolar Device Using an Amorphiz...
- Publication number 20080054406
- Publication date Mar 6, 2008
- Agere Systems Inc.
- Alan S. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction field effect transistor and method for manufacture
- Publication number 20070278539
- Publication date Dec 6, 2007
- Agere Systems Inc.
- Mark Victor Dyson
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Bipolar device having buried contacts

Bipolar device having improved capacitance

Bipolar device having buried contacts

Method to reduce collector resistance of a bipolar transistor and i...

Method to improve writer leakage in SiGe bipolar device

Bipolar device having improved capacitance

Method to improve writer leakage in a SiGe bipolar device

Method to improve performance of a bipolar device using an amorphiz...

Method to reduce boron penetration in a SiGe bipolar device

Patents Applicationslast 30 patents

BIPOLAR DEVICE HAVING BURIED CONTACTS

BIPOLAR DEVICE HAVING IMPROVED CAPACITANCE

METHOD TO REDUCE COLLECTOR RESISTANCE OF A BIPOLAR TRANSISTOR AND I...

Bipolar Junction Transistor with a Reduced Collector-Substrate Capa...

METHOD TO IMPROVE WRITER LEAKAGE IN SiGe BIPOLAR DEVICE

METHOD TO REDUCE BORON PENETRATION IN A SiGe BIPOLAR DEVICE

Method to Reduce Boron Penetration in a SiGe Bipolar Device

Method to Improve Writer Leakage in a SiGe Bipolar Device

BIPOLAR DEVICE HAVING BURIED CONTACTS

Bipolar Device Having Improved Capacitance

Method to Improve Performance of a Bipolar Device Using an Amorphiz...

Junction field effect transistor and method for manufacture