MARK L. DOCZY

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,462,678
- Issue date Oct 4, 2022
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin transfer torque magnetic mechanism
- Patent number 11,437,567
- Issue date Sep 6, 2022
- Intel Corporation
- Justin Brockman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...
- Patent number 11,430,943
- Issue date Aug 30, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque memory (pSTTM) devices with enha...
- Patent number 11,404,630
- Issue date Aug 2, 2022
- Intel Corporation
- Md Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level magnetic tunnel junction (MTJ) devices including mobile...
- Patent number 11,386,951
- Issue date Jul 12, 2022
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin orbit torque (SOT) memory device with self-aligned contacts an...
- Patent number 11,348,970
- Issue date May 31, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular STTM multi-layer insert free layer
- Patent number 11,295,884
- Issue date Apr 5, 2022
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...
- Patent number 11,257,613
- Issue date Feb 22, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned spin orbit torque (SOT) memory devices and their metho...
- Patent number 11,227,644
- Issue date Jan 18, 2022
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate electrode having a capping layer
- Patent number 11,031,482
- Issue date Jun 8, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High stability free layer for perpendicular spin torque transfer me...
- Patent number 11,031,545
- Issue date Jun 8, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque memory devices having heusler magnetic tunnel...
- Patent number 10,964,886
- Issue date Mar 30, 2021
- Intel Corporation
- Brian Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular STTM free layer including protective cap
- Patent number 10,950,660
- Issue date Mar 16, 2021
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 10,937,907
- Issue date Mar 2, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approaches for strain engineering of perpendicular magnetic tunnel...
- Patent number 10,868,233
- Issue date Dec 15, 2020
- Intel Corporation
- Daniel G. Ouellette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PSTTM device with multi-layered filter stack
- Patent number 10,847,714
- Issue date Nov 24, 2020
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low stray field magnetic memory
- Patent number 10,832,847
- Issue date Nov 10, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic memory with symmetric fixed layers
- Patent number 10,832,749
- Issue date Nov 10, 2020
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device, system and method for improved magnetic anisotropy of a mag...
- Patent number 10,804,460
- Issue date Oct 13, 2020
- Intel Corporation
- MD Tofizur Rahman
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque memory (PSTTM) devices with enha...
- Patent number 10,770,651
- Issue date Sep 8, 2020
- Intel Corporation
- MD Tofizur Rahman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferromagnetic resonance testing of buried magnetic layers of whole...
- Patent number 10,732,217
- Issue date Aug 4, 2020
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode having a capping layer
- Patent number 10,707,319
- Issue date Jul 7, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming spin-transfer torque memory having a dot-con...
- Patent number 10,707,409
- Issue date Jul 7, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Strained perpendicular magnetic tunnel junction devices
- Patent number 10,636,960
- Issue date Apr 28, 2020
- Intel Corporation
- Prashanth P. Madras
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PSTTM device with free magnetic layers coupled through a metal laye...
- Patent number 10,580,970
- Issue date Mar 3, 2020
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-transfer torque memory (STTM) devices having magnetic contacts
- Patent number 10,580,973
- Issue date Mar 3, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque memory (STTM), methods of forming the same usi...
- Patent number 10,580,975
- Issue date Mar 3, 2020
- Intel Corporation
- Mark L. Doczy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Texture breaking layer to decouple bottom electrode from PMTJ device
- Patent number 10,559,744
- Issue date Feb 11, 2020
- Intel Corporation
- Brian Maertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with enhanced tunneling magnetoresistance ratio, memor...
- Patent number 10,541,014
- Issue date Jan 21, 2020
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PERPENDICULAR STTM MULTI-LAYER INSERT FREE LAYER
- Publication number 20210296040
- Publication date Sep 23, 2021
- Intel Corporation
- KAAN OGUZ
- G11 - INFORMATION STORAGE
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20210265482
- Publication date Aug 26, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20210242325
- Publication date Aug 5, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20210135007
- Publication date May 6, 2021
- Intel Corporation
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20210013397
- Publication date Jan 14, 2021
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE HAVING A CAPPING LAYER
- Publication number 20200295153
- Publication date Sep 17, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW STRAY FIELD MAGNETIC MEMORY
- Publication number 20200051724
- Publication date Feb 13, 2020
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS
- Publication number 20200043536
- Publication date Feb 6, 2020
- Intel Corporation
- Charles C. Kuo
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES
- Publication number 20200005861
- Publication date Jan 2, 2020
- Intel Corporation
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH A SYNTHETIC ANTIFERROMA...
- Publication number 20200006628
- Publication date Jan 2, 2020
- Kevin O'Brien
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20190378972
- Publication date Dec 12, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
- Publication number 20190371940
- Publication date Dec 5, 2019
- Intel Corporation
- Justin K. Brask
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...
- Publication number 20190334079
- Publication date Oct 31, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICE WITH SELF-ALIGNED CONTACTS AN...
- Publication number 20190326353
- Publication date Oct 24, 2019
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELF-ALIGNED SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND THEIR METHO...
- Publication number 20190304523
- Publication date Oct 3, 2019
- Intel Corporation
- Kevin O'Brien
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND...
- Publication number 20190304524
- Publication date Oct 3, 2019
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETO...
- Publication number 20190304653
- Publication date Oct 3, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK
- Publication number 20190288190
- Publication date Sep 19, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM
- Publication number 20190280188
- Publication date Sep 12, 2019
- Intel Corporation
- Justin BROCKMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH STABILITY FREE LAYER FOR PERPENDICULAR SPIN TORQUE TRANSFER ME...
- Publication number 20190221734
- Publication date Jul 18, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR STTM FREE LAYER INCLUDING PROTECTIVE CAP
- Publication number 20190198567
- Publication date Jun 27, 2019
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TRANSFER TORQUE MEMORY DEVICES HAVING HEUSLER MAGNETIC TUNNEL...
- Publication number 20190189913
- Publication date Jun 20, 2019
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAG...
- Publication number 20190140166
- Publication date May 9, 2019
- Intel Corporation
- MD Tofizur RAHMAN
- G11 - INFORMATION STORAGE
Information Patent Application
LAYER TRANSFERRED FERROELECTRIC MEMORY DEVICES
- Publication number 20190115353
- Publication date Apr 18, 2019
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS
- Publication number 20190109281
- Publication date Apr 11, 2019
- Intel Corporation
- BRIAN S. DOYLE
- G11 - INFORMATION STORAGE
Information Patent Application
FERROMAGNETIC RESONANCE TESTING OF BURIED MAGNETIC LAYERS OF WHOLE...
- Publication number 20190049514
- Publication date Feb 14, 2019
- Intel Corporation
- KEVIN P. O'BRIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEXTURE BREAKING LAYER TO DECOUPLE BOTTOM ELECTRODE FROM PMTJ DEVICE
- Publication number 20190036010
- Publication date Jan 31, 2019
- Intel Corporation
- Brian MAERTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT CAPPING PROCESS FOR INTEGRATION OF MRAM DEVICES AND TH...
- Publication number 20190027537
- Publication date Jan 24, 2019
- Intel Corporation
- Christopher J. WIEGAND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACHES FOR STRAIN ENGINEERING OF PERPENDICULAR MAGNETIC TUNNEL...
- Publication number 20190027679
- Publication date Jan 24, 2019
- Intel Corporation
- Daniel G. OUELLETTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL CONTACTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES
- Publication number 20190027536
- Publication date Jan 24, 2019
- Intel Corporation
- Christopher J. Wiegand
- H01 - BASIC ELECTRIC ELEMENTS

MARK L. DOCZY

Person

Patents Grantslast 30 patents

Method for fabricating transistor with thinned channel

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Perpendicular spin transfer torque magnetic mechanism

Magnetic tunnel junction (MTJ) devices with a synthetic antiferroma...

Perpendicular spin transfer torque memory (pSTTM) devices with enha...

Multi-level magnetic tunnel junction (MTJ) devices including mobile...

Spin orbit torque (SOT) memory device with self-aligned contacts an...

Perpendicular STTM multi-layer insert free layer

Spin orbit torque (SOT) memory devices with enhanced tunnel magneto...

Self-aligned spin orbit torque (SOT) memory devices and their metho...

Gate electrode having a capping layer

High stability free layer for perpendicular spin torque transfer me...

Spin transfer torque memory devices having heusler magnetic tunnel...

Perpendicular STTM free layer including protective cap

Method for fabricating transistor with thinned channel

Approaches for strain engineering of perpendicular magnetic tunnel...

PSTTM device with multi-layered filter stack

Low stray field magnetic memory

Perpendicular magnetic memory with symmetric fixed layers

Device, system and method for improved magnetic anisotropy of a mag...

Perpendicular spin transfer torque memory (PSTTM) devices with enha...

Ferromagnetic resonance testing of buried magnetic layers of whole...

Gate electrode having a capping layer

Techniques for forming spin-transfer torque memory having a dot-con...

Strained perpendicular magnetic tunnel junction devices

PSTTM device with free magnetic layers coupled through a metal laye...

Spin-transfer torque memory (STTM) devices having magnetic contacts

Spin transfer torque memory (STTM), methods of forming the same usi...

Texture breaking layer to decouple bottom electrode from PMTJ device

Memory cells with enhanced tunneling magnetoresistance ratio, memor...

Patents Applicationslast 30 patents

PERPENDICULAR STTM MULTI-LAYER INSERT FREE LAYER

GATE ELECTRODE HAVING A CAPPING LAYER

GATE ELECTRODE HAVING A CAPPING LAYER

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

GATE ELECTRODE HAVING A CAPPING LAYER

LOW STRAY FIELD MAGNETIC MEMORY

PERPENDICULAR MAGNETIC MEMORY WITH SYMMETRIC FIXED LAYERS

MULTI-LEVEL MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES WITH A SYNTHETIC ANTIFERROMA...

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (PSTTM) DEVICES WITH ENHA...

SPIN ORBIT TORQUE (SOT) MEMORY DEVICE WITH SELF-ALIGNED CONTACTS AN...

SELF-ALIGNED SPIN ORBIT TORQUE (SOT) MEMORY DEVICES AND THEIR METHO...

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED STABILITY AND...

SPIN ORBIT TORQUE (SOT) MEMORY DEVICES WITH ENHANCED TUNNEL MAGNETO...

PSTTM DEVICE WITH MULTI-LAYERED FILTER STACK

PERPENDICULAR SPIN TRANSFER TORQUE MAGNETIC MECHANISM

HIGH STABILITY FREE LAYER FOR PERPENDICULAR SPIN TORQUE TRANSFER ME...

PERPENDICULAR STTM FREE LAYER INCLUDING PROTECTIVE CAP

SPIN TRANSFER TORQUE MEMORY DEVICES HAVING HEUSLER MAGNETIC TUNNEL...

DEVICE, SYSTEM AND METHOD FOR IMPROVED MAGNETIC ANISOTROPY OF A MAG...

LAYER TRANSFERRED FERROELECTRIC MEMORY DEVICES

SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS

FERROMAGNETIC RESONANCE TESTING OF BURIED MAGNETIC LAYERS OF WHOLE...

TEXTURE BREAKING LAYER TO DECOUPLE BOTTOM ELECTRODE FROM PMTJ DEVICE

INTERCONNECT CAPPING PROCESS FOR INTEGRATION OF MRAM DEVICES AND TH...

APPROACHES FOR STRAIN ENGINEERING OF PERPENDICULAR MAGNETIC TUNNEL...

ELECTRICAL CONTACTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES