Mark Loboda

Person

Bay City, MI, US

People

Patents Grantslast 30 patents

Information Patent Grant
Furnace for seeded sublimation of wide band gap crystals
- Patent number 11,131,038
- Issue date Sep 28, 2021
- SK SILTRON CSS, LLC
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite crucible for sublimation growth of SiC crystal
- Patent number 10,435,810
- Issue date Oct 8, 2019
- Dow Silicones Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Furnace for seeded sublimation of wide band gap crystals
- Patent number 10,344,396
- Issue date Jul 9, 2019
- Dow Silicones Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reaction cell for growing SiC crystal with low dislocation density
- Patent number 10,106,912
- Issue date Oct 23, 2018
- Dow Silicones Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing SiC wafer fit for integration with power d...
- Patent number 10,002,760
- Issue date Jun 19, 2018
- Dow Silicones Corporation
- Darren Hansen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a SiC crystal by vapor deposition onto a seed cr...
- Patent number 9,797,064
- Issue date Oct 24, 2017
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a SiC crystal by vapor deposition onto a seed cr...
- Patent number 9,738,991
- Issue date Aug 22, 2017
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing substrates having improved carrier lifetimes
- Patent number 9,337,027
- Issue date May 10, 2016
- Dow Corning Corporation
- Gilyong Chung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High voltage power semiconductor device on SiC
- Patent number 9,337,277
- Issue date May 10, 2016
- Dow Corning Corporation
- Mark Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC wafer fit for integration with power d...
- Patent number 9,279,192
- Issue date Mar 8, 2016
- Dow Corning Corporation
- Darren Hansen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heteroelement siloxane compounds and polymers
- Patent number 9,187,602
- Issue date Nov 17, 2015
- Dow Corning Corporation
- Dimitris Elias Katsoulis
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Flat SiC semiconductor substrate
- Patent number 9,165,779
- Issue date Oct 20, 2015
- Dow Corning Corporation
- Mark Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce dislocations in SiC crystal growth
- Patent number 9,017,804
- Issue date Apr 28, 2015
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Flat SiC semiconductor substrate
- Patent number 9,018,639
- Issue date Apr 28, 2015
- Dow Corning Corporation
- Mark Loboda
- B24 - GRINDING POLISHING
Information Patent Grant
SiC substrate with SiC epitaxial film
- Patent number 8,940,614
- Issue date Jan 27, 2015
- Dow Corning Corporation
- Mark J. Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage power semiconductor devices on SiC
- Patent number 8,860,040
- Issue date Oct 14, 2014
- Dow Corning Corporation
- Mark Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to manufacture large uniform ingots of silicon carbide by su...
- Patent number 8,765,091
- Issue date Jul 1, 2014
- Dow Corning Corporation
- Mark Loboda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of reducing memory effects in semiconductor epitaxy
- Patent number 8,343,854
- Issue date Jan 1, 2013
- Dow Corning Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Coated substrates and methods for their preparation
- Patent number 7,736,728
- Issue date Jun 15, 2010
- Dow Corning Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Coated substrates and methods for their preparation
- Patent number 7,622,193
- Issue date Nov 24, 2009
- Dow Corning Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing hydrogenated silicon-oxycarbide films
- Patent number 7,189,664
- Issue date Mar 13, 2007
- Dow Corning Corporation
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
H:SiOC coated substrates
- Patent number 6,667,553
- Issue date Dec 23, 2003
- Dow Corning Corporation
- Glenn Allen Cerny
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing hydrogenated silicon oxycarbide films having l...
- Patent number 6,593,655
- Issue date Jul 15, 2003
- Dow Corning Corporation
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing hydrogenated silicon oxycarbide films having l...
- Patent number 6,593,248
- Issue date Jul 15, 2003
- Dow Corning Corporation
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming air bridges
- Patent number 6,268,262
- Issue date Jul 31, 2001
- Dow Corning Corporation
- Mark Jon Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing hydrogenated silicon oxycarbide films having l...
- Patent number 6,159,871
- Issue date Dec 12, 2000
- Dow Corning Corporation
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thick ceramic coatings for electronic devices
- Patent number 5,863,595
- Issue date Jan 26, 1999
- Dow Corning Corporation
- Robert Charles Camilletti
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Curing silica precursors by exposure to nitrous oxide
- Patent number 5,820,923
- Issue date Oct 13, 1998
- Dow Corning Corporation
- David Stephen Ballance
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Silicon carbide metal diffusion barrier layer
- Patent number 5,818,071
- Issue date Oct 6, 1998
- Dow Corning Corporation
- Mark Jon Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chips suitable for known good die testing
- Patent number 5,693,565
- Issue date Dec 2, 1997
- Dow Corning Corporation
- Robert Charles Camilletti
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR REMOVAL OF SURFACE CARBON FROM POLYSILICON
- Publication number 20210114885
- Publication date Apr 22, 2021
- Hemlock Semiconductor Operations LLC
- James J. Mueller
- C01 - INORGANIC CHEMISTRY
Information Patent Application
FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS
- Publication number 20190330763
- Publication date Oct 31, 2019
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS
- Publication number 20180002828
- Publication date Jan 4, 2018
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY
- Publication number 20170137963
- Publication date May 18, 2017
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC CRYSTAL WITH LOW DISLOCATION DENSITY
- Publication number 20170137964
- Publication date May 18, 2017
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SiC WAFER FIT FOR INTEGRATION WITH POWER D...
- Publication number 20160189956
- Publication date Jun 30, 2016
- Dow Corning Corporation
- Darren Hansen
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER D...
- Publication number 20160032486
- Publication date Feb 4, 2016
- Dow Corning Corporation
- Darren Hansen
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE POWER SEMICONDUCTOR DEVICE ON SIC
- Publication number 20150333125
- Publication date Nov 19, 2015
- Dow Corning Corporation
- Mark LOBODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLAT SIC SEMICONDUCTOR SUBSTRATE
- Publication number 20150194319
- Publication date Jul 9, 2015
- Dow Corning Corporation
- Mark Loboda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SUBSTRATE WITH SiC EPITAXIAL FILM
- Publication number 20140264384
- Publication date Sep 18, 2014
- Dow Corning Corporation
- Mark J. Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC CRYSTAL WITH LOW DISLOCATION DENSITY
- Publication number 20140220298
- Publication date Aug 7, 2014
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY
- Publication number 20140220296
- Publication date Aug 7, 2014
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD TO REDUCE DISLOCATIONS IN SIC CRYSTAL GROWTH
- Publication number 20140220325
- Publication date Aug 7, 2014
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Substrates Having Improved Carrier Lifetimes
- Publication number 20140203297
- Publication date Jul 24, 2014
- Dow Corning Corporation
- Gilyong Chung
- C30 - CRYSTAL GROWTH
Information Patent Application
FLAT SIC SEMICONDUCTOR SUBSTRATE
- Publication number 20140117380
- Publication date May 1, 2014
- Dow Corning Corporation
- Mark LOBODA
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH VOLTAGE POWER SEMICONDUCTOR DEVICES ON SIC
- Publication number 20140070234
- Publication date Mar 13, 2014
- Dow Corning Corporation
- Mark LOBODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Manufacture Large Uniform Ingots of Silicon Carbide by Su...
- Publication number 20120114545
- Publication date May 10, 2012
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF REDUCING MEMORY EFFECTS IN SEMICONDUCTOR EPITAXY
- Publication number 20110073874
- Publication date Mar 31, 2011
- Dow Corning Corporation
- Mark Loboda
- C30 - CRYSTAL GROWTH
Information Patent Application
ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BA...
- Publication number 20100178490
- Publication date Jul 15, 2010
- Glenn Cerny
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Roll-To-Roll Plasma Enhanced Chemical Vapor Deposition Method of Ba...
- Publication number 20100092781
- Publication date Apr 15, 2010
- Dow Corning Corporation
- Ludmil M. Zambov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HETEROELEMENT SILOXANE COMPOUNDS AND POLYMERS
- Publication number 20100041851
- Publication date Feb 18, 2010
- Dow Corning Corporation
- Dimitris Elias Katsoulis
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Application
Method of Manufacturing Substrates Having Improved Carrier Lifetimes
- Publication number 20100006859
- Publication date Jan 14, 2010
- Gilyong Chung
- C30 - CRYSTAL GROWTH
Information Patent Application
Coated Substrates and Methods for Their Preparation
- Publication number 20090053491
- Publication date Feb 26, 2009
- Dow Corning Corporation
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Coated Substrates and Methods for Their Preparation
- Publication number 20070248768
- Publication date Oct 25, 2007
- Mark Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Organic light-emitting diode
- Publication number 20060158101
- Publication date Jul 20, 2006
- Dow Corning Corporation
- Robert Charles Camilletti
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method for producing hydrogenated silicon-oxycarbide films
- Publication number 20060148252
- Publication date Jul 6, 2006
- Dow Corning Corporation
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for producing hydrogenated silicon oxycarbide films
- Publication number 20040166692
- Publication date Aug 26, 2004
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
H:SiOC coated substrates
- Publication number 20030111662
- Publication date Jun 19, 2003
- Glenn Allen Cerny
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for producing hydrogenated silicon oxycarbide films having l...
- Publication number 20020173172
- Publication date Nov 21, 2002
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Metal ion diffusion barrier layers
- Publication number 20020137323
- Publication date Sep 26, 2002
- Mark Jon Loboda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Mark Loboda

Person

Patents Grantslast 30 patents

Furnace for seeded sublimation of wide band gap crystals

Graphite crucible for sublimation growth of SiC crystal

Furnace for seeded sublimation of wide band gap crystals

Reaction cell for growing SiC crystal with low dislocation density

Method for manufacturing SiC wafer fit for integration with power d...

Method for growing a SiC crystal by vapor deposition onto a seed cr...

Method for growing a SiC crystal by vapor deposition onto a seed cr...

Method of manufacturing substrates having improved carrier lifetimes

High voltage power semiconductor device on SiC

Method for manufacturing SiC wafer fit for integration with power d...

Heteroelement siloxane compounds and polymers

Flat SiC semiconductor substrate

Method to reduce dislocations in SiC crystal growth

Flat SiC semiconductor substrate

SiC substrate with SiC epitaxial film

High voltage power semiconductor devices on SiC

Method to manufacture large uniform ingots of silicon carbide by su...

Method of reducing memory effects in semiconductor epitaxy

Coated substrates and methods for their preparation

Coated substrates and methods for their preparation

Method for producing hydrogenated silicon-oxycarbide films

H:SiOC coated substrates

Method for producing hydrogenated silicon oxycarbide films having l...

Method for producing hydrogenated silicon oxycarbide films having l...

Method for forming air bridges

Method for producing hydrogenated silicon oxycarbide films having l...

Thick ceramic coatings for electronic devices

Curing silica precursors by exposure to nitrous oxide

Silicon carbide metal diffusion barrier layer

Semiconductor chips suitable for known good die testing

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR REMOVAL OF SURFACE CARBON FROM POLYSILICON

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

FURNACE FOR SEEDED SUBLIMATION OF WIDE BAND GAP CRYSTALS

SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY

SIC CRYSTAL WITH LOW DISLOCATION DENSITY

METHOD FOR MANUFACTURING SiC WAFER FIT FOR INTEGRATION WITH POWER D...

METHOD FOR MANUFACTURING SIC WAFER FIT FOR INTEGRATION WITH POWER D...

HIGH VOLTAGE POWER SEMICONDUCTOR DEVICE ON SIC

FLAT SIC SEMICONDUCTOR SUBSTRATE

SiC SUBSTRATE WITH SiC EPITAXIAL FILM

SIC CRYSTAL WITH LOW DISLOCATION DENSITY

SIC CRYSTAL AND WAFER CUT FROM CRYSTAL WITH LOW DISLOCATION DENSITY

METHOD TO REDUCE DISLOCATIONS IN SIC CRYSTAL GROWTH

Method of Manufacturing Substrates Having Improved Carrier Lifetimes

FLAT SIC SEMICONDUCTOR SUBSTRATE

HIGH VOLTAGE POWER SEMICONDUCTOR DEVICES ON SIC

Method to Manufacture Large Uniform Ingots of Silicon Carbide by Su...

METHOD OF REDUCING MEMORY EFFECTS IN SEMICONDUCTOR EPITAXY

ROLL-TO-ROLL PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION METHOD OF BA...

Roll-To-Roll Plasma Enhanced Chemical Vapor Deposition Method of Ba...

HETEROELEMENT SILOXANE COMPOUNDS AND POLYMERS

Method of Manufacturing Substrates Having Improved Carrier Lifetimes

Coated Substrates and Methods for Their Preparation

Coated Substrates and Methods for Their Preparation

Organic light-emitting diode

Method for producing hydrogenated silicon-oxycarbide films

Method for producing hydrogenated silicon oxycarbide films

H:SiOC coated substrates

Method for producing hydrogenated silicon oxycarbide films having l...

Metal ion diffusion barrier layers