Mark T. RAMSBEY

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Split gate charge trapping memory cells having different select gat...
- Patent number 11,450,680
- Issue date Sep 20, 2022
- Infineon Technologies LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 11,342,429
- Issue date May 24, 2022
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive change elements using passivating interface gaps and meth...
- Patent number 11,258,023
- Issue date Feb 22, 2022
- Nantero, Inc.
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having programmable impedance elements with a common...
- Patent number 11,056,646
- Issue date Jul 6, 2021
- Adesto Technologies Corporation
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reference circuits and methods for resistive memories
- Patent number 10,984,861
- Issue date Apr 20, 2021
- Adesto Technologies Corporation
- Ishai Naveh
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge trapping split gate device and method of fabricating same
- Patent number 10,923,601
- Issue date Feb 16, 2021
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,818,761
- Issue date Oct 27, 2020
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate charge trapping memory cells having different select gat...
- Patent number 10,777,568
- Issue date Sep 15, 2020
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,403,731
- Issue date Sep 3, 2019
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional capacitor
- Patent number 10,141,393
- Issue date Nov 27, 2018
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,014,380
- Issue date Jul 3, 2018
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping split gate device and method of fabricating same
- Patent number 9,966,477
- Issue date May 8, 2018
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping split gate embedded flash memory and associated met...
- Patent number 9,922,833
- Issue date Mar 20, 2018
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 9,917,166
- Issue date Mar 13, 2018
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use disposable gate cap to form transistors, and split gate charge...
- Patent number 9,590,079
- Issue date Mar 7, 2017
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 9,368,606
- Issue date Jun 14, 2016
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate formation memory by planarization
- Patent number 9,368,644
- Issue date Jun 14, 2016
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory gate landing pad made from dummy features
- Patent number 9,209,197
- Issue date Dec 8, 2015
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having trapezoidal bitlines and method of fabricating...
- Patent number 8,957,472
- Issue date Feb 17, 2015
- Spansion LLC
- Ashot Melik-Martirosian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process charging protection for split gate charge trapping flash
- Patent number 8,816,438
- Issue date Aug 26, 2014
- Spansion LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices containing a high-K dielectric layer
- Patent number 8,691,647
- Issue date Apr 8, 2014
- Spansion LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory manufacturing process with bitline isolation
- Patent number 8,673,716
- Issue date Mar 18, 2014
- Spansion LLC
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried silicide local interconnect with sidewall spacers and method...
- Patent number 8,368,219
- Issue date Feb 5, 2013
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having trapezoidal bitlines and method of fabricating...
- Patent number 8,125,018
- Issue date Feb 28, 2012
- Spansion LLC
- Ashot Melik-Martirosian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried silicide local interconnect with sidewall spacers and method...
- Patent number 8,049,334
- Issue date Nov 1, 2011
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming bit lines for semiconductor devices
- Patent number 7,972,948
- Issue date Jul 5, 2011
- Spansion LLC
- Weidong Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-reflective interpoly dielectric
- Patent number 7,964,905
- Issue date Jun 21, 2011
- Spansion LLC
- Robert B. Ogle, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming bit lines for semiconductor devices
- Patent number 7,811,915
- Issue date Oct 12, 2010
- Spansion LLC
- Weidong Qian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried silicide local interconnect with sidewall spacers and method...
- Patent number 7,786,003
- Issue date Aug 31, 2010
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitridation of gate oxide by laser processing
- Patent number 7,670,936
- Issue date Mar 2, 2010
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE CHANGE ELEMENTS USING PASSIVATING INTERFACE GAPS AND METH...
- Publication number 20220045290
- Publication date Feb 10, 2022
- Nantero, Inc.
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE CHARGE TRAPPING MEMORY CELLS HAVING DIFFERENT SELECT GAT...
- Publication number 20210104533
- Publication date Apr 8, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20210091198
- Publication date Mar 25, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20190386109
- Publication date Dec 19, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20180366551
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Device and Method of Fabricating Same
- Publication number 20180323314
- Publication date Nov 8, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING PROGRAMMABLE IMPEDANCE ELEMENTS WITH A COMMON...
- Publication number 20180205012
- Publication date Jul 19, 2018
- Adesto Technologies Corporation
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split Gate Charge Trapping Memory Cells Having Different Select Gat...
- Publication number 20170194343
- Publication date Jul 6, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20170141201
- Publication date May 18, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20160293720
- Publication date Oct 6, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Formation Memory by Planarization
- Publication number 20160218227
- Publication date Jul 28, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE TRAPPING SPLIT GATE EMBEDDED FLASH MEMORY AND ASSOCIATED MET...
- Publication number 20160111292
- Publication date Apr 21, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use Disposable Gate Cap to Form Transistors, and Split Gate Charge...
- Publication number 20150287812
- Publication date Oct 8, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Formation Memory by Planarization
- Publication number 20150179817
- Publication date Jun 25, 2015
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use Disposable Gate Cap to Form Transistors, and Split Gate Charge...
- Publication number 20140167142
- Publication date Jun 19, 2014
- SPANSION LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Embedded Flash Memory and Associated Met...
- Publication number 20140167141
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process Charging Protection for Split Gate Charge Trapping Flash
- Publication number 20140167135
- Publication date Jun 19, 2014
- SPANSION LLC
- Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Device with Improved Select Gate to Memory Gate Iso...
- Publication number 20140167136
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20140167140
- Publication date Jun 19, 2014
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Gate Landing Pad Made From Dummy Features
- Publication number 20140167128
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL CAPACITOR
- Publication number 20140167220
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Device and Method of Fabricating Same
- Publication number 20140170843
- Publication date Jun 19, 2014
- SPANSION LLC
- Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING TRAPEZOIDAL BITLINES AND METHOD FO FABRICATING...
- Publication number 20120122285
- Publication date May 17, 2012
- Ashot Melik-Martirosian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED SILICIDE LOCAL INTERCONNECT WITH SIDEWALL SPACERS AND METHOD...
- Publication number 20120038051
- Publication date Feb 16, 2012
- SPANSION LLC
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING BIT LINES FOR SEMICONDUCTOR DEVICES
- Publication number 20100330762
- Publication date Dec 30, 2010
- SPANSION LLC
- Weidong QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIT LINES FOR SEMICONDUCTOR DEVICES
- Publication number 20080157187
- Publication date Jul 3, 2008
- SPANSION LLC
- Weidong QIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bit line implant
- Publication number 20070093042
- Publication date Apr 26, 2007
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to impr...
- Publication number 20070029604
- Publication date Feb 8, 2007
- Ning Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20060214218
- Publication date Sep 28, 2006
- Kiyokazu Shishido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory device having trapezoidal bitlines and method of fabricating...
- Publication number 20060151821
- Publication date Jul 13, 2006
- Ashot Melik-Martirosian
- H01 - BASIC ELECTRIC ELEMENTS

Mark T. RAMSBEY

Person

Patents Grantslast 30 patents

Split gate charge trapping memory cells having different select gat...

Memory first process flow and device

Resistive change elements using passivating interface gaps and meth...

Memory device having programmable impedance elements with a common...

Reference circuits and methods for resistive memories

Charge trapping split gate device and method of fabricating same

Memory first process flow and device

Split gate charge trapping memory cells having different select gat...

Memory first process flow and device

Three dimensional capacitor

Memory first process flow and device

Charge trapping split gate device and method of fabricating same

Charge trapping split gate embedded flash memory and associated met...

Memory first process flow and device

Use disposable gate cap to form transistors, and split gate charge...

Memory first process flow and device

Gate formation memory by planarization

Memory gate landing pad made from dummy features

Memory device having trapezoidal bitlines and method of fabricating...

Process charging protection for split gate charge trapping flash

Memory devices containing a high-K dielectric layer

Memory manufacturing process with bitline isolation

Buried silicide local interconnect with sidewall spacers and method...

Memory device having trapezoidal bitlines and method of fabricating...

Buried silicide local interconnect with sidewall spacers and method...

Method for forming bit lines for semiconductor devices

Anti-reflective interpoly dielectric

Method for forming bit lines for semiconductor devices

Buried silicide local interconnect with sidewall spacers and method...

Nitridation of gate oxide by laser processing

Patents Applicationslast 30 patents

RESISTIVE CHANGE ELEMENTS USING PASSIVATING INTERFACE GAPS AND METH...

SPLIT GATE CHARGE TRAPPING MEMORY CELLS HAVING DIFFERENT SELECT GAT...

Memory First Process Flow and Device

Memory First Process Flow and Device

Memory First Process Flow and Device

Charge Trapping Split Gate Device and Method of Fabricating Same

MEMORY DEVICE HAVING PROGRAMMABLE IMPEDANCE ELEMENTS WITH A COMMON...

Split Gate Charge Trapping Memory Cells Having Different Select Gat...

Memory First Process Flow and Device

Memory First Process Flow and Device

Gate Formation Memory by Planarization

CHARGE TRAPPING SPLIT GATE EMBEDDED FLASH MEMORY AND ASSOCIATED MET...

Use Disposable Gate Cap to Form Transistors, and Split Gate Charge...

Gate Formation Memory by Planarization

Use Disposable Gate Cap to Form Transistors, and Split Gate Charge...

Charge Trapping Split Gate Embedded Flash Memory and Associated Met...

Process Charging Protection for Split Gate Charge Trapping Flash

Charge Trapping Device with Improved Select Gate to Memory Gate Iso...

Memory First Process Flow and Device

Memory Gate Landing Pad Made From Dummy Features

THREE DIMENSIONAL CAPACITOR

Charge Trapping Split Gate Device and Method of Fabricating Same

MEMORY DEVICE HAVING TRAPEZOIDAL BITLINES AND METHOD FO FABRICATING...

BURIED SILICIDE LOCAL INTERCONNECT WITH SIDEWALL SPACERS AND METHOD...

METHOD FOR FORMING BIT LINES FOR SEMICONDUCTOR DEVICES

BIT LINES FOR SEMICONDUCTOR DEVICES

Bit line implant

Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to impr...

Semiconductor device and method of fabricating the same

Memory device having trapezoidal bitlines and method of fabricating...