Martin Giles

Person

Hillsborough, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 12,125,916
- Issue date Oct 22, 2024
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 11,552,197
- Issue date Jan 10, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 10,991,799
- Issue date Apr 27, 2021
- Sony Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 10,985,184
- Issue date Apr 20, 2021
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 10,636,871
- Issue date Apr 28, 2020
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 10,580,899
- Issue date Mar 3, 2020
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 9,806,193
- Issue date Oct 31, 2017
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar device having uniaxially strained semiconductor body and...
- Patent number 9,680,013
- Issue date Jun 13, 2017
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming fins for metal oxide semiconductor device struc...
- Patent number 9,607,987
- Issue date Mar 28, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 9,595,581
- Issue date Mar 14, 2017
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 9,583,487
- Issue date Feb 28, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 9,564,522
- Issue date Feb 7, 2017
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 9,450,092
- Issue date Sep 20, 2016
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 9,224,754
- Issue date Dec 29, 2015
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 9,129,829
- Issue date Sep 8, 2015
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 9,087,863
- Issue date Jul 21, 2015
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 8,753,942
- Issue date Jun 17, 2014
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 8,741,733
- Issue date Jun 3, 2014
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar device having uniaxially strained semiconductor body and...
- Patent number 8,558,279
- Issue date Oct 15, 2013
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to reduce layout based strain variations in n...
- Patent number 8,487,348
- Issue date Jul 16, 2013
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 8,362,566
- Issue date Jan 29, 2013
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to reduce layout based strain variations in n...
- Patent number 8,269,283
- Issue date Sep 18, 2012
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement spacers for MOSFET fringe capacitance reduction and pro...
- Patent number 7,838,373
- Issue date Nov 23, 2010
- Intel Corporation
- Martin Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple oxide thickness for a semiconductor device
- Patent number 7,719,057
- Issue date May 18, 2010
- Intel Corporation
- Martin D Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor performance enhancement using engineered strains
- Patent number 7,679,145
- Issue date Mar 16, 2010
- Intel Corporation
- Jun He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a silicon-on-insulator (SOI) wafer with an...
- Patent number 7,473,614
- Issue date Jan 6, 2009
- Intel Corporation
- Peter G. Tolchinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor integrated circuit using un...
- Patent number 7,470,972
- Issue date Dec 30, 2008
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nanowire Structures Having Non-Discrete Source and Drain Regions
- Publication number 20230111689
- Publication date Apr 13, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20210226006
- Publication date Jul 22, 2021
- Sony Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Application
FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES
- Publication number 20210210514
- Publication date Jul 8, 2021
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20200227520
- Publication date Jul 16, 2020
- Intel Corporation
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20200152797
- Publication date May 14, 2020
- Intel Corporation
- Stephen M. CEA
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHODS FOR FORMING FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUC...
- Publication number 20170200744
- Publication date Jul 13, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20170141239
- Publication date May 18, 2017
- Stephen M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20170133462
- Publication date May 11, 2017
- Intel Corporation
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20170125591
- Publication date May 4, 2017
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20160372597
- Publication date Dec 22, 2016
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20160064562
- Publication date Mar 3, 2016
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20150325648
- Publication date Nov 12, 2015
- Stephen M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20150303258
- Publication date Oct 22, 2015
- Intel Corporation
- Kelin J. KUHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20140326952
- Publication date Nov 6, 2014
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20140239400
- Publication date Aug 28, 2014
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUC...
- Publication number 20140151814
- Publication date Jun 5, 2014
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-Planar Device Having Uniaxially Strained Semiconductor Body and...
- Publication number 20140070273
- Publication date Mar 13, 2014
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20140042386
- Publication date Feb 13, 2014
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20140035059
- Publication date Feb 6, 2014
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20130143385
- Publication date Jun 6, 2013
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS TO REDUCE LAYOUT BASED STRAIN VARIATIONS IN N...
- Publication number 20120305990
- Publication date Dec 6, 2012
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20120138886
- Publication date Jun 7, 2012
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-planar device having uniaxially strained semiconductor body and...
- Publication number 20120074464
- Publication date Mar 29, 2012
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and apparatus to reduce layout based strain variations in n...
- Publication number 20110147847
- Publication date Jun 23, 2011
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement spacers for mosfet fringe capacatance reduction and pro...
- Publication number 20100025775
- Publication date Feb 4, 2010
- Martin Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED FACET- AND NON-FACET 3D SOURCE/DRAIN CONTACTS IN MOSFETS
- Publication number 20090315120
- Publication date Dec 24, 2009
- Lucian Shifren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20090315114
- Publication date Dec 24, 2009
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems And Methods To Increase Uniaxial Compressive Stress In Tri-...
- Publication number 20090152589
- Publication date Jun 18, 2009
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a silicon-on-insulator (SOI) wafer with an...
- Publication number 20090096025
- Publication date Apr 16, 2009
- Peter G. Tolchinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary metal oxide semiconductor integrated circuit using un...
- Publication number 20090075445
- Publication date Mar 19, 2009
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS

Martin Giles

Person

Patents Grantslast 30 patents

Fins for metal oxide semiconductor device structures

Silicon and silicon germanium nanowire structures

Nanowire structures having non-discrete source and drain regions

Nanowire structures having non-discrete source and drain regions

Silicon and silicon germanium nanowire structures

Fins for metal oxide semiconductor device structures

Semiconductor device having metallic source and drain regions

Silicon and silicon germanium nanowire structures

Nanowire structures having non-discrete source and drain regions

Stress in trigate devices using complimentary gate fill materials

Non-planar device having uniaxially strained semiconductor body and...

Methods for forming fins for metal oxide semiconductor device struc...

Silicon and silicon germanium nanowire structures

Semiconductor device having metallic source and drain regions

Nanowire structures having non-discrete source and drain regions

Stress in trigate devices using complimentary gate fill materials

Stress in trigate devices using complimentary gate fill materials

Silicon and silicon germanium nanowire structures

Nanowire structures having non-discrete source and drain regions

Silicon and silicon germanium nanowire structures

Stress in trigate devices using complimentary gate fill materials

Non-planar device having uniaxially strained semiconductor body and...

Methods and apparatus to reduce layout based strain variations in n...

Stress in trigate devices using complimentary gate fill materials

Methods and apparatus to reduce layout based strain variations in n...

Replacement spacers for MOSFET fringe capacitance reduction and pro...

Multiple oxide thickness for a semiconductor device

Transistor performance enhancement using engineered strains

Method for manufacturing a silicon-on-insulator (SOI) wafer with an...

Complementary metal oxide semiconductor integrated circuit using un...

Patents Applicationslast 30 patents

Nanowire Structures Having Non-Discrete Source and Drain Regions

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

METHODS FOR FORMING FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUC...

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

METHODS FOR FORMING FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUC...

Non-Planar Device Having Uniaxially Strained Semiconductor Body and...

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

METHODS AND APPARATUS TO REDUCE LAYOUT BASED STRAIN VARIATIONS IN N...

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

Non-planar device having uniaxially strained semiconductor body and...

Methods and apparatus to reduce layout based strain variations in n...

Replacement spacers for mosfet fringe capacatance reduction and pro...

RAISED FACET- AND NON-FACET 3D SOURCE/DRAIN CONTACTS IN MOSFETS

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

Systems And Methods To Increase Uniaxial Compressive Stress In Tri-...

Method for manufacturing a silicon-on-insulator (SOI) wafer with an...

Complementary metal oxide semiconductor integrated circuit using un...