Martin Knaipp

Person

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People

Patents Grantslast 30 patents

Information Patent Grant
Schottky barrier diode with improved Schottky contact for high volt...
- Patent number 11,257,919
- Issue date Feb 22, 2022
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device with separate source and body contac...
- Patent number 10,283,635
- Issue date May 7, 2019
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a high-voltage semiconductor drift device
- Patent number 9,954,118
- Issue date Apr 24, 2018
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device and method of producing the same
- Patent number 9,748,408
- Issue date Aug 29, 2017
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a high-voltage transistor
- Patent number 9,722,047
- Issue date Aug 1, 2017
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor device and production method
- Patent number 9,685,437
- Issue date Jun 20, 2017
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage field-effect transistor and method of making the same
- Patent number 9,362,395
- Issue date Jun 7, 2016
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor and component containing the latter
- Patent number 9,093,527
- Issue date Jul 28, 2015
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric high-voltage JFET and manufacturing process
- Patent number 9,076,880
- Issue date Jul 7, 2015
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor device and production method
- Patent number 9,076,676
- Issue date Jul 7, 2015
- AMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel LDMOS transistor and method of producing a p-channel LDMO...
- Patent number 8,963,243
- Issue date Feb 24, 2015
- AMS AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor body and method for the design of a semiconductor bod...
- Patent number 8,399,937
- Issue date Mar 19, 2013
- Austriamicrosystems AG
- Georg Röhrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple gate oxides with shallow trench isolation m...
- Patent number 8,227,318
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor with improved high stride performance
- Patent number 8,212,318
- Issue date Jul 3, 2012
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor and method for its manufacture
- Patent number 8,129,782
- Issue date Mar 6, 2012
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a transistor with reliable source doping
- Patent number 7,977,197
- Issue date Jul 12, 2011
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage NMOS-transistor and associated production method
- Patent number 7,898,030
- Issue date Mar 1, 2011
- austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor body with a trench and sem...
- Patent number 7,888,234
- Issue date Feb 15, 2011
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple mask and method for producing differently doped regions
- Patent number 7,820,342
- Issue date Oct 26, 2010
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage depletion layer field effect transistor
- Patent number 7,781,809
- Issue date Aug 24, 2010
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage PMOS transistor
- Patent number 7,663,203
- Issue date Feb 16, 2010
- Austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SCHOTTKY BARRIER DIODE WITH IMPROVED SCHOTTKY CONTACT FOR HIGH VOLT...
- Publication number 20200235217
- Publication date Jul 23, 2020
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE WITH SEPARATE SOURCE AND BODY CONTAC...
- Publication number 20180130906
- Publication date May 10, 2018
- ams AG
- Martin KNAIPP
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A HIGH-VOLTAGE SEMICONDUCTOR DRIFT DEVICE
- Publication number 20170345947
- Publication date Nov 30, 2017
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20160293777
- Publication date Oct 6, 2016
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
- Publication number 20160247898
- Publication date Aug 25, 2016
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME
- Publication number 20150061009
- Publication date Mar 5, 2015
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR DEVICE AND PRODUCTION METHOD
- Publication number 20140361374
- Publication date Dec 11, 2014
- ams AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR DEVICE AND PRODUCTION METHOD
- Publication number 20140332906
- Publication date Nov 13, 2014
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL LDMOS TRANSISTOR AND METHOD OF PRODUCING A P-CHANNEL LDMO...
- Publication number 20130168769
- Publication date Jul 4, 2013
- ams AG
- Jong Mun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric High-Voltage JFET and Manufacturing Process
- Publication number 20120187458
- Publication date Jul 26, 2012
- AUSTRIAMICROSYSTEMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Multiple Gate Oxides with Shallow Trench Isolation M...
- Publication number 20110117714
- Publication date May 19, 2011
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Body and Method for the Design of a Semiconductor Bod...
- Publication number 20100117162
- Publication date May 13, 2010
- austriamicrosystems AG
- Georg Röhrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH IMPROVED HIGH STRIDE PERFORMANCE
- Publication number 20090321822
- Publication date Dec 31, 2009
- austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Transistor and Component Containing the Latter
- Publication number 20090302383
- Publication date Dec 10, 2009
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arrangement with Two Transistors and Method for the Production Thereof
- Publication number 20090215235
- Publication date Aug 27, 2009
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Transistor and Method for its Manufacture
- Publication number 20090212360
- Publication date Aug 27, 2009
- austriamicrosystems AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple mask and method for producing differently doped regions
- Publication number 20090098718
- Publication date Apr 16, 2009
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor body with a trench and sem...
- Publication number 20080290445
- Publication date Nov 27, 2008
- austriamicrosystems AG Schloss Premstatten
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Depletion Layer Field Effect Transistor
- Publication number 20080067560
- Publication date Mar 20, 2008
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Pmos Transistor
- Publication number 20070278573
- Publication date Dec 6, 2007
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Nmos-Transistor and Associated Production Method
- Publication number 20070278570
- Publication date Dec 6, 2007
- AUSTRIAMICROSYSTEMS AG
- Martin Knaipp
- H01 - BASIC ELECTRIC ELEMENTS

Martin Knaipp

Person

Patents Grantslast 30 patents

Schottky barrier diode with improved Schottky contact for high volt...

Field effect transistor device with separate source and body contac...

Method of producing a high-voltage semiconductor drift device

High-voltage semiconductor device and method of producing the same

Method of producing a high-voltage transistor

High-voltage transistor device and production method

High-voltage field-effect transistor and method of making the same

High-voltage transistor and component containing the latter

Asymmetric high-voltage JFET and manufacturing process

High-voltage transistor device and production method

P-channel LDMOS transistor and method of producing a p-channel LDMO...

Semiconductor body and method for the design of a semiconductor bod...

Integration of multiple gate oxides with shallow trench isolation m...

High-voltage transistor with improved high stride performance

High-voltage transistor and method for its manufacture

Method for fabricating a transistor with reliable source doping

High-voltage NMOS-transistor and associated production method

Method for manufacturing a semiconductor body with a trench and sem...

Multiple mask and method for producing differently doped regions

High voltage depletion layer field effect transistor

High-voltage PMOS transistor

Patents Applicationslast 30 patents

SCHOTTKY BARRIER DIODE WITH IMPROVED SCHOTTKY CONTACT FOR HIGH VOLT...

FIELD EFFECT TRANSISTOR DEVICE WITH SEPARATE SOURCE AND BODY CONTAC...

METHOD OF PRODUCING A HIGH-VOLTAGE SEMICONDUCTOR DRIFT DEVICE

HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME

HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING THE SAME

HIGH-VOLTAGE TRANSISTOR DEVICE AND PRODUCTION METHOD

HIGH-VOLTAGE TRANSISTOR DEVICE AND PRODUCTION METHOD

P-CHANNEL LDMOS TRANSISTOR AND METHOD OF PRODUCING A P-CHANNEL LDMO...

Asymmetric High-Voltage JFET and Manufacturing Process

Integration of Multiple Gate Oxides with Shallow Trench Isolation M...

Semiconductor Body and Method for the Design of a Semiconductor Bod...

HIGH-VOLTAGE TRANSISTOR WITH IMPROVED HIGH STRIDE PERFORMANCE

High-Voltage Transistor and Component Containing the Latter

Arrangement with Two Transistors and Method for the Production Thereof

High-Voltage Transistor and Method for its Manufacture

Multiple mask and method for producing differently doped regions

Method for manufacturing a semiconductor body with a trench and sem...

High Voltage Depletion Layer Field Effect Transistor

High-Voltage Pmos Transistor

High-Voltage Nmos-Transistor and Associated Production Method