Martin Schrems

Person

Langenbrueck, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Process for fabrication of a semiconductor component having a tungs...
- Patent number 6,960,541
- Issue date Nov 1, 2005
- Infineon Technologies AG
- Dirk Drescher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with an insulation collar and method for producing...
- Patent number 6,828,191
- Issue date Dec 7, 2004
- Siemens Aktiengesellschaft
- Kai Wurster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a trench capacitor
- Patent number 6,750,111
- Issue date Jun 15, 2004
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a barrier layer
- Patent number 6,730,607
- Issue date May 4, 2004
- Infineon Technologies AG
- Helmut Wurzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing the capacitance in a storage trench
- Patent number 6,699,747
- Issue date Mar 2, 2004
- Infineon Technologies AG
- Alexander Ruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor and method for fabricating a trench capacitor
- Patent number 6,580,110
- Issue date Jun 17, 2003
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor configuration and method of producing it
- Patent number 6,548,850
- Issue date Apr 15, 2003
- Infineon Technologies AG
- Stefan Gernhard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for improving the thickness uniformity of a thin oxide laye...
- Patent number 6,537,926
- Issue date Mar 25, 2003
- Infineon Technologies, AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a trench capacitor
- Patent number 6,528,384
- Issue date Mar 4, 2003
- Infineon Technologies AG
- Gustav Beckmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with insulation collar and method for producing th...
- Patent number 6,509,599
- Issue date Jan 21, 2003
- Siemens Aktiengesellschaft
- Kai Wurster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage, low capacitance isolation material
- Patent number 6,465,370
- Issue date Oct 15, 2002
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined preanneal/oxidation step using rapid thermal processing
- Patent number 6,436,846
- Issue date Aug 20, 2002
- Siemens Aktiengesellscharft
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable polycide gate stack with reduced sheet resistance and thic...
- Patent number 6,376,348
- Issue date Apr 23, 2002
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact between a monocrystalline silicon region and a polycrystall...
- Patent number 6,329,703
- Issue date Dec 11, 2001
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating epitaxy layer
- Patent number 6,326,262
- Issue date Dec 4, 2001
- Infineon Technologies AG
- Dietmar Temmler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing methods
- Patent number 6,319,788
- Issue date Nov 20, 2001
- Infineon Technologies North America Corp.
- Ulrike Gruening
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with isolation collar and corresponding manufactur...
- Patent number 6,310,375
- Issue date Oct 30, 2001
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with epi buried layer
- Patent number 6,265,741
- Issue date Jul 24, 2001
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for a trench capacitor with an insulation collar
- Patent number 6,200,873
- Issue date Mar 13, 2001
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme enhancing deep trench capacitance in semiconduct...
- Patent number 6,177,696
- Issue date Jan 23, 2001
- International Business Machines Corporation
- Gary B. Bronner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a polycrystalline silicon structure and polycr...
- Patent number 6,068,928
- Issue date May 30, 2000
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors having defect denuded zones
- Patent number 6,040,211
- Issue date Mar 21, 2000
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottle-shaped trench capacitor with epi buried layer
- Patent number 6,018,174
- Issue date Jan 25, 2000
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a trench capacitor with a deposited isolation...
- Patent number 6,008,104
- Issue date Dec 28, 1999
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with epi buried layer
- Patent number 5,945,704
- Issue date Aug 31, 1999
- Siemens Aktiengesellschaft
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for fabricating a trench capacitor
- Publication number 20030181006
- Publication date Sep 25, 2003
- Infineon Technologies AG
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for increasing the capacitance in a storage trench and trenc...
- Publication number 20030073283
- Publication date Apr 17, 2003
- Infineon Technologies AG
- Alexander Ruf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component and process for its fabrication
- Publication number 20020070414
- Publication date Jun 13, 2002
- Dirk Drescher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing an oxidation-protected electrode for a capaciti...
- Publication number 20020068465
- Publication date Jun 6, 2002
- Anke Krasemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a barrier layer
- Publication number 20020055269
- Publication date May 9, 2002
- Helmut Wurzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low leakage capacitance isolation material
- Publication number 20020025622
- Publication date Feb 28, 2002
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a trench capacitor
- Publication number 20010055846
- Publication date Dec 27, 2001
- Gustav Beckmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench capacitor and method for fabricating a trench capacitor
- Publication number 20010044180
- Publication date Nov 22, 2001
- Martin Schrems
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for increasing the capacitance in a storage trench and trenc...
- Publication number 20010030352
- Publication date Oct 18, 2001
- Alexander Ruf
- H01 - BASIC ELECTRIC ELEMENTS

Martin Schrems

Person

Patents Grantslast 30 patents

Process for fabrication of a semiconductor component having a tungs...

Trench capacitor with an insulation collar and method for producing...

Method for fabricating a trench capacitor

Method for fabricating a barrier layer

Method for increasing the capacitance in a storage trench

Trench capacitor and method for fabricating a trench capacitor

Trench capacitor configuration and method of producing it

Process for improving the thickness uniformity of a thin oxide laye...

Method for manufacturing a trench capacitor

Trench capacitor with insulation collar and method for producing th...

Low leakage, low capacitance isolation material

Combined preanneal/oxidation step using rapid thermal processing

Reliable polycide gate stack with reduced sheet resistance and thic...

Contact between a monocrystalline silicon region and a polycrystall...

Method for fabricating epitaxy layer

Semiconductor structure and manufacturing methods

Trench capacitor with isolation collar and corresponding manufactur...

Trench capacitor with epi buried layer

Production method for a trench capacitor with an insulation collar

Integration scheme enhancing deep trench capacitance in semiconduct...

Method for producing a polycrystalline silicon structure and polycr...

Semiconductors having defect denuded zones

Bottle-shaped trench capacitor with epi buried layer

Method of fabricating a trench capacitor with a deposited isolation...

Trench capacitor with epi buried layer

Patents Applicationslast 30 patents

Method for fabricating a trench capacitor

Method for increasing the capacitance in a storage trench and trenc...

Semiconductor component and process for its fabrication

Method of producing an oxidation-protected electrode for a capaciti...

Method for fabricating a barrier layer

Low leakage capacitance isolation material

Method for manufacturing a trench capacitor

Trench capacitor and method for fabricating a trench capacitor

Method for increasing the capacitance in a storage trench and trenc...