Claims
- 1. A method for increasing a capacitance in a storage trench, which comprises the steps of:depositing a layer of silicon oxide in the storage trench; depositing a layer of silicon over the layer of silicon oxide by a deposition method suitable for sufficient coverage of walls of the storage trench; depositing a layer having an oxidizable metal over the layer of silicon; and oxidizing the layer of silicon and the layer having the oxidizable metal to form a layer having a metal oxide and a silicon oxide.
- 2. The method according to claim 1, which comprises using one of a chemical vapor deposition process and an atomic layer deposition process as the deposition method.
- 3. The method according to claim 2, which comprises depositing a further layer formed of a material selected from the group consisting of silicon oxide and silicon nitride over the layer having the metal oxide and the silicon oxide.
- 4. The method according to claim 1, which comprises using a metal selected from the group consisting of Ti, TiN, W, WN, Ta, TaN, WSi, TiSi and TaSi as the oxidizable metal of the layer having the oxidizable metal.
- 5. The method according to claim 1, which comprises carrying out the oxidizing step in an oxygen-containing atmosphere.
- 6. The method according to claim 1, which comprises filling the storage trench with silicon.
- 7. The method according to claim 1, which comprises forming the storage trench to have a width of less than 140 nm.
- 8. The method according to claim 1, which comprises forming the layer of silicon oxide to have a thickness of approximately 0.3 nm.
- 9. The method according to claim 3, which comprises forming the further layer to have a thickness of approximately 0.3 nm.
- 10. The method according to claim 3, which comprises depositing the layer of silicon oxide and the further layer by a chemical vapor deposition process.
- 11. The method according to claim 1, which comprises forming the layer of silicon to have a thickness of approximately 0.5 nm.
- 12. The method according to claim 1, which comprises using silicon in the layer of silicon which is particularly suitable for covering side walls of the storage trench.
- 13. The method according to claim 1, which comprises forming the layer having the oxidizable metal to a thickness of approximately 10 nm.
- 14. The method according to claim 1, which comprises depositing the layer having the oxidizable metal by a chemical vapor deposition process.
Priority Claims (1)
Number |
Date |
Country |
Kind |
100 10 821 |
Feb 2000 |
DE |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of U.S. application Ser. No. 09/796,213, filed Feb. 28, 2001, now abandoned.
US Referenced Citations (25)
Foreign Referenced Citations (2)
Number |
Date |
Country |
42 21 959 |
Jan 1993 |
DE |
43 37 889 |
May 1994 |
DE |
Non-Patent Literature Citations (1)
Entry |
L. Manchanda et al.: “Yttrium Oxide/Silicon Dioxide: A New Dielectric Structure for VLSI/ULSI Circuits”, IEEE Electron Device Letters, vol. 9, Apr. 1988, No. 4, pp. 180-182. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/796213 |
Feb 2001 |
US |
Child |
10/298394 |
|
US |