Mary CHEN

Person

Oak Park, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride P-channel transistor
- Patent number 9,812,532
- Issue date Nov 7, 2017
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ta based ohmic contact
- Patent number 9,646,839
- Issue date May 9, 2017
- HRL Laboratories, LLC
- Mary Y. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride insulating-gate transistors with passivation
- Patent number 9,337,332
- Issue date May 10, 2016
- HRL Laboratories, LLC
- Rongming Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum dots (QD) for semiconductor integrated circuit
- Patent number 9,117,763
- Issue date Aug 25, 2015
- HRL Laboratories, LLC
- Mary Y. Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
InP based heterojunction bipolar transistors with emitter-up and em...
- Patent number 8,697,532
- Issue date Apr 15, 2014
- HRL Laboratories, LLC
- Mary Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlGaN/GaN hybrid MOS-HFET
- Patent number 8,653,559
- Issue date Feb 18, 2014
- HRL Laboratories, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device coding using quantum dot technology
- Patent number 8,595,654
- Issue date Nov 26, 2013
- HRL Laboratories, LLC
- Mary Y. Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Group III-V compound semiconductor based heterojunction bipolar tra...
- Patent number 8,216,910
- Issue date Jul 10, 2012
- HRL Laboratories, LLC
- Mary Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a device with a diamond layer
- Patent number 7,892,881
- Issue date Feb 22, 2011
- Raytheon Company
- Mary Y. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InP based heterojunction bipolar transistors with emitter-up and em...
- Patent number 7,655,529
- Issue date Feb 2, 2010
- HRL Laboratories, LLC
- Mary Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with reduced interface charge between epitaxially...
- Patent number 7,582,536
- Issue date Sep 1, 2009
- HRL Laboratories, LLC
- Rajesh D. Rajavel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor based heterojuncton bipolar tran...
- Patent number 7,576,409
- Issue date Aug 18, 2009
- HRL Laboratories, LLC
- Mary Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device with reduced interface charge between epitaxially...
- Patent number 7,531,851
- Issue date May 12, 2009
- HRL Laboratories, LLC
- Rajesh D. Rajavel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect with high aspect ratio plugged vias
- Patent number 7,470,619
- Issue date Dec 30, 2008
- HRL Laboratories, LLC
- Mary Y. Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic device with patterned ion implant subcollector
- Patent number 7,259,444
- Issue date Aug 21, 2007
- HRL Laboratories, LLC
- Mary Y. Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TA BASED OHMIC CONTACT
- Publication number 20160276161
- Publication date Sep 22, 2016
- HRL LABORATORIES, LLC
- Mary Y. CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TA BASED AU-FREE OHMIC CONTACTS IN ADVANCED AIGAN/GAN BASED HFETS A...
- Publication number 20150364330
- Publication date Dec 17, 2015
- HRL LABORATORIES LLC
- Mary Y. CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION
- Publication number 20150349117
- Publication date Dec 3, 2015
- HRL LABORATORIES LLC
- Rongming CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALGaN/GaN HYBRID MOS-HFET
- Publication number 20130001646
- Publication date Jan 3, 2013
- HRL LABORATORIES, LLC
- Andrea Corrion
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING A DEVICE WITH A DIAMOND LAYER
- Publication number 20100216301
- Publication date Aug 26, 2010
- MARY Y. CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
InP BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH EMITTER-UP AND EM...
- Publication number 20100059793
- Publication date Mar 11, 2010
- HRL LABORATORIES, LLC
- Mary CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V COMPOUND SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR TRA...
- Publication number 20100047986
- Publication date Feb 25, 2010
- HRL LABORATORIES, LLC
- Mary CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure for a heterojunction bipolar transistor and...
- Publication number 20050035370
- Publication date Feb 17, 2005
- HRL Laboratories, LLC
- Mary Chen
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

III-nitride P-channel transistor

Ta based ohmic contact

III-Nitride insulating-gate transistors with passivation

Quantum dots (QD) for semiconductor integrated circuit

InP based heterojunction bipolar transistors with emitter-up and em...

AlGaN/GaN hybrid MOS-HFET

Semiconductor device coding using quantum dot technology

Group III-V compound semiconductor based heterojunction bipolar tra...

Fabricating a device with a diamond layer

InP based heterojunction bipolar transistors with emitter-up and em...

Electronic device with reduced interface charge between epitaxially...

Group III-V compound semiconductor based heterojuncton bipolar tran...

Electronic device with reduced interface charge between epitaxially...

Interconnect with high aspect ratio plugged vias

Optoelectronic device with patterned ion implant subcollector

Patents Applicationslast 30 patents

TA BASED OHMIC CONTACT

TA BASED AU-FREE OHMIC CONTACTS IN ADVANCED AIGAN/GAN BASED HFETS A...

III-NITRIDE INSULATING-GATE TRANSISTORS WITH PASSIVATION

ALGaN/GaN HYBRID MOS-HFET

FABRICATING A DEVICE WITH A DIAMOND LAYER

InP BASED HETEROJUNCTION BIPOLAR TRANSISTORS WITH EMITTER-UP AND EM...

GROUP III-V COMPOUND SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR TRA...

Semiconductor structure for a heterojunction bipolar transistor and...