Mary Weybright

Person

Pleasant Valley, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
SRAM design to facilitate single fin cut in double sidewall image t...
- Patent number RE49794
- Issue date Jan 9, 2024
- Adeia Semiconductor Solutions LLC
- Mary E. Weybright
Information Patent Grant
SRAM design to facilitate single fin cut in double sidewall image t...
- Patent number 10,096,521
- Issue date Oct 9, 2018
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM design to facilitate single fin cut in double sidewall image t...
- Patent number 9,564,446
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned drain/channel junction in vertical pass transistor DRA...
- Patent number 6,930,004
- Issue date Aug 16, 2005
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMOSFET device with localized nitrogen sidewall implantation
- Patent number 6,724,053
- Issue date Apr 20, 2004
- International Business Machines Corporation
- Rama Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric gates for high density DRAM
- Patent number 6,670,667
- Issue date Dec 30, 2003
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate processing method with reduced gate oxide corner and edge thin...
- Patent number 6,656,798
- Issue date Dec 2, 2003
- Infineon Technologies, AG
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified gate processing for optimized definition of array and logi...
- Patent number 6,548,357
- Issue date Apr 15, 2003
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully encapsulated damascene gates for Gigabit DRAMs
- Patent number 6,504,210
- Issue date Jan 7, 2003
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric gates for high density DRAM
- Patent number 6,458,646
- Issue date Oct 1, 2002
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified gate processing for optimized definition of array and logi...
- Patent number 6,403,423
- Issue date Jun 11, 2002
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit using damascene gate structure
- Patent number 6,388,294
- Issue date May 14, 2002
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual tox trench dram structures and process using V-groove
- Patent number 6,380,027
- Issue date Apr 30, 2002
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modified gate conductor processing for poly length control in high...
- Patent number 6,346,734
- Issue date Feb 12, 2002
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate prespacers for high density, high performance DRAMs
- Patent number 6,326,260
- Issue date Dec 4, 2001
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate oxide process for uniform oxide thickness
- Patent number 6,261,972
- Issue date Jul 17, 2001
- Infineon Technologies AG
- Helmut Horst Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dual sidewall oxidation in high density, high performanc...
- Patent number 6,197,632
- Issue date Mar 6, 2001
- International Business Machines Corporation
- Gary B. Bronner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit of logic and memory usi...
- Patent number 6,194,301
- Issue date Feb 27, 2001
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating dual workfunction devices on a semiconductor...
- Patent number 6,190,979
- Issue date Feb 20, 2001
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion strap semiconductor memory device
- Patent number 6,180,975
- Issue date Jan 30, 2001
- International Business Machines Corporation
- Carl J. Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor structures including a pair o...
- Patent number 6,096,664
- Issue date Aug 1, 2000
- Siemens Aktiengesellschaft
- Thomas S. Rupp
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SRAM DESIGN TO FACILITATE SINGLE FIN CUT IN DOUBLE SIDEWALL IMAGE T...
- Publication number 20170178963
- Publication date Jun 22, 2017
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRA...
- Publication number 20050037561
- Publication date Feb 17, 2005
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate processing method with reduced gate oxide corner and edge thin...
- Publication number 20030067035
- Publication date Apr 10, 2003
- Helmut Tews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric gates for high density DRAM
- Publication number 20020192912
- Publication date Dec 19, 2002
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modified gate processing for optimized difinition of array and logi...
- Publication number 20020111025
- Publication date Aug 15, 2002
- International Business Machines Corporation
- Mary E. Weybright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate prespacers for high density, high performance drams
- Publication number 20010054729
- Publication date Dec 27, 2001
- International Business Machines Corporation
- Ramachandra Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED GATE CONDUCTOR PROCESSING FOR POLY LENGTH CONTROL IN HIGH...
- Publication number 20010045609
- Publication date Nov 29, 2001
- RAMACHANDRA DIVAKARUNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TOX TRENCH DRAM STRUCTURES AND PROCESS USING V-GROOVE
- Publication number 20010014481
- Publication date Aug 16, 2001
- TOSHIHARU FURUKAWA
- H01 - BASIC ELECTRIC ELEMENTS

Mary Weybright

Person

Patents Grantslast 30 patents

SRAM design to facilitate single fin cut in double sidewall image t...

SRAM design to facilitate single fin cut in double sidewall image t...

SRAM design to facilitate single fin cut in double sidewall image t...

Self-aligned drain/channel junction in vertical pass transistor DRA...

PMOSFET device with localized nitrogen sidewall implantation

Asymmetric gates for high density DRAM

Gate processing method with reduced gate oxide corner and edge thin...

Modified gate processing for optimized definition of array and logi...

Fully encapsulated damascene gates for Gigabit DRAMs

Asymmetric gates for high density DRAM

Modified gate processing for optimized definition of array and logi...

Integrated circuit using damascene gate structure

Dual tox trench dram structures and process using V-groove

Modified gate conductor processing for poly length control in high...

Gate prespacers for high density, high performance DRAMs

Dual gate oxide process for uniform oxide thickness

Method for dual sidewall oxidation in high density, high performanc...

Method of fabricating an integrated circuit of logic and memory usi...

Method for fabricating dual workfunction devices on a semiconductor...

Depletion strap semiconductor memory device

Method of manufacturing semiconductor structures including a pair o...

Patents Applicationslast 30 patents

SRAM DESIGN TO FACILITATE SINGLE FIN CUT IN DOUBLE SIDEWALL IMAGE T...

SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRA...

Gate processing method with reduced gate oxide corner and edge thin...

Asymmetric gates for high density DRAM

Modified gate processing for optimized difinition of array and logi...

Gate prespacers for high density, high performance drams

MODIFIED GATE CONDUCTOR PROCESSING FOR POLY LENGTH CONTROL IN HIGH...

DUAL TOX TRENCH DRAM STRUCTURES AND PROCESS USING V-GROOVE