Masahiko Nakayama

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic memory device
- Patent number 11,980,104
- Issue date May 7, 2024
- Kioxia Corporation
- Masaru Toko
Information Patent Grant
Nonvolatile storage device
- Patent number 11,856,791
- Issue date Dec 26, 2023
- Kioxia Corporation
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 11,758,739
- Issue date Sep 12, 2023
- Kioxia Corporation
- Masayoshi Iwayama
Information Patent Grant
Storage device
- Patent number 11,742,020
- Issue date Aug 29, 2023
- Kioxia Corporation
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage device
- Patent number 11,676,661
- Issue date Jun 13, 2023
- Kioxia Corporation
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile storage device
- Patent number 11,367,748
- Issue date Jun 21, 2022
- Kioxia Corporation
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic device and memory device
- Patent number 11,171,175
- Issue date Nov 9, 2021
- TOSHIBA MEMORY CORPORATION
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 11,094,743
- Issue date Aug 17, 2021
- TOSHIBA MEMORY CORPORATION
- Masayoshi Iwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile storage device
- Patent number 10,985,210
- Issue date Apr 20, 2021
- TOSHIBA MEMORY CORPORATION
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile storage device
- Patent number 10,985,209
- Issue date Apr 20, 2021
- TOSHIBA MEMORY CORPORATION
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive memory device with different write pulse patterns
- Patent number 10,910,032
- Issue date Feb 2, 2021
- TOSHIBA MEMORY CORPORATION
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,446,739
- Issue date Oct 15, 2019
- TOSHIBA MEMORY CORPORATION
- Tsuneo Inaba
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device with different write pulse patterns
- Patent number 10,325,640
- Issue date Jun 18, 2019
- TOSHIBA MEMORY CORPORATION
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic storage device and memory system
- Patent number 9,984,736
- Issue date May 29, 2018
- TOSHIBA MEMORY CORPORATION
- Ahmetserdar Demiray
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjustable read reference voltage to reduce errors in memory devices
- Patent number 9,947,380
- Issue date Apr 17, 2018
- TOSHIBA MEMORY CORPORATION
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable change memory and the writing method of the same
- Patent number 9,858,973
- Issue date Jan 2, 2018
- TOSHIBA MEMORY CORPORATION
- Shintaro Sakai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory capable of reading data without accessing memo...
- Patent number 9,672,887
- Issue date Jun 6, 2017
- Kabushiki Kaisha Toshiba
- Hironobu Furuhashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device and manufacturing method of the same
- Patent number 9,647,034
- Issue date May 9, 2017
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 9,466,350
- Issue date Oct 11, 2016
- Kabushiki Kaisha Toshiba
- Akiyuki Murayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element with shift canceling layer having...
- Patent number 9,269,890
- Issue date Feb 23, 2016
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element
- Patent number 9,196,822
- Issue date Nov 24, 2015
- Kabushiki Kaisha Toshiba
- Shigeto Fukatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element
- Patent number 9,184,374
- Issue date Nov 10, 2015
- Kazuya Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and manufacturing method of the same
- Patent number 9,166,151
- Issue date Oct 20, 2015
- Kabushiki Kaisha Toshiba
- Akiyuki Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element
- Patent number 9,076,960
- Issue date Jul 7, 2015
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element, magnetic memory device, spin transistor, a...
- Patent number 8,958,239
- Issue date Feb 17, 2015
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 8,897,060
- Issue date Nov 25, 2014
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,884,389
- Issue date Nov 11, 2014
- Kabushiki Kaisha Toshiba
- Masaru Toko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and producing method thereof
- Patent number 8,878,321
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,665,639
- Issue date Mar 4, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory element having an adjustment layer for reducing a l...
- Patent number 8,634,238
- Issue date Jan 21, 2014
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC STORAGE DEVICE
- Publication number 20240090344
- Publication date Mar 14, 2024
- KIOXIA Corporation
- Takeo KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20230380183
- Publication date Nov 23, 2023
- KIOXIA Corporation
- Masayoshi IWAYAMA
Information Patent Application
STORAGE DEVICE
- Publication number 20230309428
- Publication date Sep 28, 2023
- KIOXIA Corporation
- Kenji FUKUDA
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING ELEMENT AND STORAGE DEVICE
- Publication number 20230189661
- Publication date Jun 15, 2023
- KIOXIA Corporation
- Shogo ITAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20230079445
- Publication date Mar 16, 2023
- KIOXIA Corporation
- Kenji FUKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20220301621
- Publication date Sep 22, 2022
- KIOXIA Corporation
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE DEVICE
- Publication number 20220293171
- Publication date Sep 15, 2022
- KIOXIA Corporation
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE STORAGE DEVICE
- Publication number 20220278168
- Publication date Sep 1, 2022
- KIOXIA Corporation
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20220085276
- Publication date Mar 17, 2022
- KIOXIA Corporation
- Masaru TOKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20210335888
- Publication date Oct 28, 2021
- Toshiba Memory Corporation
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE STORAGE DEVICE
- Publication number 20210210549
- Publication date Jul 8, 2021
- Toshiba Memory Corporation
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE AND MEMORY DEVICE
- Publication number 20200302984
- Publication date Sep 24, 2020
- Toshiba Memory Corporation
- Tadashi KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE STORAGE DEVICE
- Publication number 20200303453
- Publication date Sep 24, 2020
- Toshiba Memory Corporation
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE STORAGE DEVICE
- Publication number 20200303455
- Publication date Sep 24, 2020
- Toshiba Memory Corporation
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20200091227
- Publication date Mar 19, 2020
- Toshiba Memory Corporation
- Masayoshi IWAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20200075671
- Publication date Mar 5, 2020
- Toshiba Memory Corporation
- Jyunichi OZEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE WITH DIFFERENT WRITE PULSE PATTERNS
- Publication number 20190259438
- Publication date Aug 22, 2019
- Toshiba Memory Corporation
- Tatsuya KISHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20190096461
- Publication date Mar 28, 2019
- Toshiba Memory Corporation
- Masahiro Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20180277743
- Publication date Sep 27, 2018
- Toshiba Memory Corporation
- Tsuneo INABA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20180075895
- Publication date Mar 15, 2018
- Toshiba Memory Corporation
- Tatsuya KISHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STORAGE DEVICE AND MEMORY SYSTEM
- Publication number 20180053542
- Publication date Feb 22, 2018
- Toshiba Memory Corporation
- Ahmetserdar DEMIRAY
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20170263679
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND MEMORY DEVICE
- Publication number 20170263336
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY CAPABLE OF READING DATA WITHOUT ACCESSING MEMO...
- Publication number 20170069366
- Publication date Mar 9, 2017
- Kabushiki Kaisha Toshiba
- Hironobu FURUHASHI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20170069687
- Publication date Mar 9, 2017
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE CHANGE MEMORY AND THE WRITING METHOD OF THE SAME
- Publication number 20160379697
- Publication date Dec 29, 2016
- Kabushiki Kaisha Toshiba
- Shintaro SAKAI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE
- Publication number 20160267960
- Publication date Sep 15, 2016
- Kabushiki Kaisha Toshiba
- Akiyuki MURAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20140284735
- Publication date Sep 25, 2014
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20140284742
- Publication date Sep 25, 2014
- Kazuya SAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT
- Publication number 20140264669
- Publication date Sep 18, 2014
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS

Masahiko Nakayama

Person

Patents Grantslast 30 patents

Magnetic memory device

Nonvolatile storage device

Magnetic memory device

Storage device

Storage device

Nonvolatile storage device

Magnetic device and memory device

Magnetic memory device

Nonvolatile storage device

Nonvolatile storage device

Magnetoresistive memory device with different write pulse patterns

Semiconductor memory device

Magnetoresistive memory device with different write pulse patterns

Magnetic storage device and memory system

Adjustable read reference voltage to reduce errors in memory devices

Variable change memory and the writing method of the same

Semiconductor memory capable of reading data without accessing memo...

Magnetoresistive memory device and manufacturing method of the same

Magnetic memory device

Magnetoresistance effect element with shift canceling layer having...

Magnetoresistive effect element

Magnetoresistive element

Magnetoresistive element and manufacturing method of the same

Magnetic memory element

Magnetic memory element, magnetic memory device, spin transistor, a...

Magnetoresistance effect element and magnetic memory

Magnetoresistive element and method of manufacturing the same

Magnetoresistive element and producing method thereof

Magnetoresistive element and magnetic memory

Magnetic memory element having an adjustment layer for reducing a l...

Patents Applicationslast 30 patents

MAGNETIC STORAGE DEVICE

MAGNETIC MEMORY DEVICE

STORAGE DEVICE

SWITCHING ELEMENT AND STORAGE DEVICE

MEMORY DEVICE

STORAGE DEVICE

STORAGE DEVICE

NONVOLATILE STORAGE DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

NONVOLATILE STORAGE DEVICE

MAGNETIC DEVICE AND MEMORY DEVICE

NONVOLATILE STORAGE DEVICE

NONVOLATILE STORAGE DEVICE

MAGNETIC MEMORY DEVICE

MAGNETIC MEMORY DEVICE

MAGNETORESISTIVE MEMORY DEVICE WITH DIFFERENT WRITE PULSE PATTERNS

MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE

MAGNETIC STORAGE DEVICE AND MEMORY SYSTEM

MAGNETIC MEMORY DEVICE

MEMORY AND MEMORY DEVICE

SEMICONDUCTOR MEMORY CAPABLE OF READING DATA WITHOUT ACCESSING MEMO...

MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

VARIABLE CHANGE MEMORY AND THE WRITING METHOD OF THE SAME

MAGNETIC MEMORY DEVICE

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT

MAGNETIC MEMORY ELEMENT