Masaki Okajima

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Display device
- Patent number 5,739,946
- Issue date Apr 14, 1998
- Kabushiki Kaisha Toshiba
- Hiroki Iwanaga
- G02 - OPTICS
Information Patent Grant
Semiconductor laser device
- Patent number 5,406,574
- Issue date Apr 11, 1995
- Kabushiki Kaisha Toshiba
- John Rennie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Wavelength converting optical device
- Patent number 5,377,291
- Issue date Dec 27, 1994
- Kabushiki Kaisha Toshiba
- Genichi Hatakoshi
- G02 - OPTICS
Information Patent Grant
Semiconductor laser whose active layer has an ordered structure
- Patent number 5,305,341
- Issue date Apr 19, 1994
- Kabushiki Kaisha Toshiba
- Yukie Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,282,218
- Issue date Jan 25, 1994
- Kabushiki Kaisha Toshiba
- Masaki Okajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an active layer made of InGaAlP material
- Patent number 5,202,895
- Issue date Apr 13, 1993
- Kabushiki Kaisha Toshiba
- Koichi Nitta
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transverse-mode oscillation semiconductor laser device
- Patent number 5,065,404
- Issue date Nov 12, 1991
- Kabushiki Kaisha Toshiba
- Masaki Okajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Visible light emitting semiconductor laser with inverse mesa-shaped...
- Patent number 5,058,120
- Issue date Oct 15, 1991
- Kabushiki Kaisha Toshiba
- Koichi Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transverse-mode stabilized semiconductor laser diode with slab-coup...
- Patent number 4,799,228
- Issue date Jan 17, 1989
- Kabushiki Kaisha Toshiba
- Hiroko Nagasaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode formed of a compound semiconductor material
- Patent number 4,706,101
- Issue date Nov 10, 1987
- Kabushiki Kaisha Toshiba
- Masaru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device having current confining and built-in wa...
- Patent number 4,691,321
- Issue date Sep 1, 1987
- Kabushiki Kaisha Toshiba
- Nawoto Motegi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and method for manufacturing the same
- Patent number 4,647,953
- Issue date Mar 3, 1987
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masaki Okajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device having a double heterojunction structure
- Patent number 4,635,268
- Issue date Jan 6, 1987
- Kabushiki Kaisha Toshiba
- Nawoto Motegi
- H01 - BASIC ELECTRIC ELEMENTS

Masaki Okajima

Person

Patents Grantslast 30 patents

Display device

Semiconductor laser device

Wavelength converting optical device

Semiconductor laser whose active layer has an ordered structure

Semiconductor laser device

Semiconductor device having an active layer made of InGaAlP material

Transverse-mode oscillation semiconductor laser device

Visible light emitting semiconductor laser with inverse mesa-shaped...

Transverse-mode stabilized semiconductor laser diode with slab-coup...

Light emitting diode formed of a compound semiconductor material

Semiconductor laser device having current confining and built-in wa...

Semiconductor laser device and method for manufacturing the same

Semiconductor laser device having a double heterojunction structure