Masamichi Azuma

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit capacitors with barrier layer and process for ma...
- Patent number 6,447,838
- Issue date Sep 10, 2002
- Symetrix Corporation
- Masamichi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barium strontium titanate integrated circuit capacitors and process...
- Patent number 6,372,286
- Issue date Apr 16, 2002
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film capacitors on gallium arsenide substrate
- Patent number 6,327,135
- Issue date Dec 4, 2001
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Barium strontium titanate integrated circuit capacitors and process...
- Patent number 6,285,048
- Issue date Sep 4, 2001
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
UV radiation process for making electronic devices having low-leaka...
- Patent number 6,133,050
- Issue date Oct 17, 2000
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...
- Patent number 6,025,619
- Issue date Feb 15, 2000
- Masamichi Azuma
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuits having mixed layered superlattice materials and...
- Patent number 5,955,754
- Issue date Sep 21, 1999
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrical component having low-leakage current and low polarizatio...
- Patent number 5,909,042
- Issue date Jun 1, 1999
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
UV radiation process for making electronic devices having low-leaka...
- Patent number 5,871,853
- Issue date Feb 16, 1999
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuits having mixed layered superlattice materials and...
- Patent number 5,840,110
- Issue date Nov 24, 1998
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Encapsulated capacitor structure having a dielectric interlayer
- Patent number 5,822,175
- Issue date Oct 13, 1998
- Matsushita Electronics Corporation
- Masamichi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin films of ABO.sub.3 with excess B-site modifiers and method of...
- Patent number 5,814,849
- Issue date Sep 29, 1998
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuits having mixed layered superlattice materials and...
- Patent number 5,803,961
- Issue date Sep 8, 1998
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...
- Patent number 5,723,361
- Issue date Mar 3, 1998
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bottom electrode structure for dielectric capacitors
- Patent number 5,708,302
- Issue date Jan 13, 1998
- Symetrix Corporation
- Masamichi Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin films of ABO.sub.3 with excess B-site modifiers and method of...
- Patent number 5,690,727
- Issue date Nov 25, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Capacitor apparatus and method of manufacture of same
- Patent number 5,645,976
- Issue date Jul 8, 1997
- Matsushita Electronics Corporation
- Masamichi Azuma
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of forming ABO.sub.3 films with excess B-site modifiers
- Patent number 5,624,707
- Issue date Apr 29, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thin film capacitors on gallium arsenide substrate and process for...
- Patent number 5,620,739
- Issue date Apr 15, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Integrated circuit capacitors and process for making the same
- Patent number 5,614,018
- Issue date Mar 25, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for making metal oxides
- Patent number 5,612,082
- Issue date Mar 18, 1997
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH
Information Patent Grant
Specially doped precursor solutions for use in methods of producing...
- Patent number 5,516,363
- Issue date May 14, 1996
- Symetrix Corporation
- Masamichi Azuma
- C30 - CRYSTAL GROWTH

Masamichi Azuma

Person

Patents Grantslast 30 patents

Integrated circuit capacitors with barrier layer and process for ma...

Barium strontium titanate integrated circuit capacitors and process...

Thin film capacitors on gallium arsenide substrate

Barium strontium titanate integrated circuit capacitors and process...

UV radiation process for making electronic devices having low-leaka...

Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...

Integrated circuits having mixed layered superlattice materials and...

Electrical component having low-leakage current and low polarizatio...

UV radiation process for making electronic devices having low-leaka...

Integrated circuits having mixed layered superlattice materials and...

Encapsulated capacitor structure having a dielectric interlayer

Thin films of ABO.sub.3 with excess B-site modifiers and method of...

Integrated circuits having mixed layered superlattice materials and...

Thin films of ABO.sub.3 with excess A-site and B-site modifiers and...

Bottom electrode structure for dielectric capacitors

Thin films of ABO.sub.3 with excess B-site modifiers and method of...

Capacitor apparatus and method of manufacture of same

Method of forming ABO.sub.3 films with excess B-site modifiers

Thin film capacitors on gallium arsenide substrate and process for...

Integrated circuit capacitors and process for making the same

Process for making metal oxides

Specially doped precursor solutions for use in methods of producing...