Masanobu Tsuchitani

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 10,141,399
- Issue date Nov 27, 2018
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,020,362
- Issue date Jul 10, 2018
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with peripheral void space and method of makin...
- Patent number 9,865,680
- Issue date Jan 9, 2018
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 7,906,416
- Issue date Mar 15, 2011
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a plurality of gate electrodes
- Patent number 7,772,641
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a gate electrode including a pair of poly...
- Patent number 7,541,642
- Issue date Jun 2, 2009
- Kabushiki Kaisha Toshiba
- Keiko Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 7,507,630
- Issue date Mar 24, 2009
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,423,315
- Issue date Sep 9, 2008
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,420,245
- Issue date Sep 2, 2008
- Kabushiki Kaisha Toshiba
- Atsuko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,262,477
- Issue date Aug 28, 2007
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having vertical metal insulator semiconductor...
- Patent number 6,995,426
- Issue date Feb 7, 2006
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high breakdown voltage and method for m...
- Patent number 6,429,501
- Issue date Aug 6, 2002
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having directionally balanced gates and manufa...
- Patent number 6,337,498
- Issue date Jan 8, 2002
- Kabushiki Kaisha Toshiba
- Shigeru Hasegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor gate trench with covered open ends
- Patent number 6,239,464
- Issue date May 29, 2001
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of high breakdown voltage using semiconductive...
- Patent number 6,222,231
- Issue date Apr 24, 2001
- Kabushiki Kaisha Toshiba
- Shingo Satou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device having high breakdown voltage and method of manufactur...
- Patent number 6,084,263
- Issue date Jul 4, 2000
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,060,747
- Issue date May 9, 2000
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same with stab...
- Patent number 6,031,276
- Issue date Feb 29, 2000
- Kabushiki Kaisha Toshiba
- Akihiko Osawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a vertical transistor having a trench gate
- Patent number 5,770,514
- Issue date Jun 23, 1998
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power MOSFET and process of fabricating the same
- Patent number 5,578,508
- Issue date Nov 26, 1996
- Kabushiki Kaisha Toshiba
- Yoshiro Baba
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170263703
- Publication date Sep 14, 2017
- Kabushiki Kaisha Toshiba
- Hideki OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170069714
- Publication date Mar 9, 2017
- Kabushiki Kaisha Toshiba
- Masanobu TSUCHITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160276430
- Publication date Sep 22, 2016
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20100203688
- Publication date Aug 12, 2010
- KABUSHIKI KAISHA TOSHIBA
- Motoshige KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080299686
- Publication date Dec 4, 2008
- Kabushiki Kaisha Toshiba
- Motoshige KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20080296611
- Publication date Dec 4, 2008
- Kabushiki Kaisha Toshiba
- Motoshige KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080090391
- Publication date Apr 17, 2008
- Kabushiki Kaisha Toshiba
- Masanobu TSUCHITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METH...
- Publication number 20070210350
- Publication date Sep 13, 2007
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070023828
- Publication date Feb 1, 2007
- KABUSHIKI KAISHA TOSHIBA
- Keiko Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device
- Publication number 20060237786
- Publication date Oct 26, 2006
- KABUSHIKI KAISHA TOSHIBA
- Hideaki Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a semiconductor device
- Publication number 20060160320
- Publication date Jul 20, 2006
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20060145290
- Publication date Jul 6, 2006
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060108600
- Publication date May 25, 2006
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MIS device and method for manufacturing trench MIS device
- Publication number 20060091453
- Publication date May 4, 2006
- Kabushiki Kaisha Toshiba
- Noboru Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method of the same
- Publication number 20060043480
- Publication date Mar 2, 2006
- Kabushiki Kaisha Toshiba
- Masanobu Tsuchitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060043481
- Publication date Mar 2, 2006
- Kabushiki Kaisha Toshiba
- Atsuko Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050253190
- Publication date Nov 17, 2005
- Kabushiki Kaisha Toshiba
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040140521
- Publication date Jul 22, 2004
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040016962
- Publication date Jan 29, 2004
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having vertical metal insulator semiconductor...
- Publication number 20030122222
- Publication date Jul 3, 2003
- Hideki Okumura
- H01 - BASIC ELECTRIC ELEMENTS

Masanobu Tsuchitani

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device with peripheral void space and method of makin...

Method for manufacturing semiconductor device

Power semiconductor device with a plurality of gate electrodes

Semiconductor device with a gate electrode including a pair of poly...

Method of fabricating a semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Semiconductor device having high breakdown voltage and method for m...

Semiconductor device having directionally balanced gates and manufa...

Semiconductor gate trench with covered open ends

Semiconductor device of high breakdown voltage using semiconductive...

Power device having high breakdown voltage and method of manufactur...

Semiconductor device

Semiconductor device and method of manufacturing the same with stab...

Method for manufacturing a vertical transistor having a trench gate

Vertical power MOSFET and process of fabricating the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND METH...

Semiconductor device and method of manufacturing the same

Power semiconductor device

Method of fabricating a semiconductor device

Semiconductor device having vertical metal insulator semiconductor...

Semiconductor device and method for manufacturing the same

Trench MIS device and method for manufacturing trench MIS device

Semiconductor device and fabrication method of the same

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device having vertical metal insulator semiconductor...