Masanori Murakami

Person

Tsuduki-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
n-Electrode for III group nitride based compound semiconductor element
- Patent number 7,872,274
- Issue date Jan 18, 2011
- Toyoda Gosei Co., Ltd.
- Shunsuke Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor interconnections
- Patent number 7,781,339
- Issue date Aug 24, 2010
- Kobe Steel, Ltd.
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element and production method thereof
- Patent number 7,572,652
- Issue date Aug 11, 2009
- Toyoda Gosei Co., Ltd.
- Yuhei Ikemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type SiC
- Patent number 7,564,062
- Issue date Jul 21, 2009
- Toyoda Gosei, Co., Ltd.
- Tomohiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an undercoat layer and method of manufa...
- Patent number 7,550,782
- Issue date Jun 23, 2009
- Toyoda Gosei Co., Ltd.
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for semiconductor interconnections
- Patent number 7,538,027
- Issue date May 26, 2009
- Kobe Steel, Ltd.
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type Group III nitride compound semiconductor layer...
- Patent number 7,190,076
- Issue date Mar 13, 2007
- Toyoda Gosei Co., Ltd.
- Ippei Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring structure for semiconductor device
- Patent number 7,164,207
- Issue date Jan 16, 2007
- Toyoda Gosei Co., Ltd.
- Masahiro Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for form...
- Patent number 7,018,915
- Issue date Mar 28, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type SiC
- Patent number 6,943,376
- Issue date Sep 13, 2005
- Toyoda Gosei Co., Ltd.
- Osamu Nakatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride compound semiconductor element an electrode forming method
- Patent number 6,806,571
- Issue date Oct 19, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN related compound semiconductor and process for producing the same
- Patent number 6,573,117
- Issue date Jun 3, 2003
- Toyoda Gosei Co., Ltd.
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing GaN related compound semiconductor
- Patent number 6,500,689
- Issue date Dec 31, 2002
- Toyoda Gosei Co., Ltd.
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode, method of manufacturing the same and semiconductor...
- Patent number 6,365,969
- Issue date Apr 2, 2002
- Sumitomo Electric Industries, Ltd.
- Akira Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode, method and multi-layered structure for making same
- Patent number 6,313,534
- Issue date Nov 6, 2001
- Sony Corporation
- Mitsuhiro Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN related compound semiconductor light-emitting device
- Patent number 6,291,840
- Issue date Sep 18, 2001
- Toyoda Gosei Co., Ltd
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making II-VI group compound semiconductor device
- Patent number 6,033,929
- Issue date Mar 7, 2000
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode, its fabricating method and semiconductor device
- Patent number 6,033,976
- Issue date Mar 7, 2000
- Sony Corporation
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered structure for ohmic electrode fabrication
- Patent number 5,982,036
- Issue date Nov 9, 1999
- Sony Corporation
- Chihiro Uchibori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a copper wiring layer formed on a base...
- Patent number 5,973,400
- Issue date Oct 26, 1999
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating ohmic electrode and multi-layered structure...
- Patent number 5,904,554
- Issue date May 18, 1999
- Sony Corporation
- Chihiro Uchibori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming electrodes on gallium nitride group compound sem...
- Patent number 5,811,319
- Issue date Sep 22, 1998
- Toyoda Gosei Co., Ltd
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
II-VI group compound semiconductor device and method for manufactur...
- Patent number 5,786,269
- Issue date Jul 28, 1998
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
II-VI group compound semiconductor device
- Patent number 5,767,536
- Issue date Jun 16, 1998
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating ohmic electrode and multi-layered structure...
- Patent number 5,767,007
- Issue date Jun 16, 1998
- Sony Corporation
- Chihiro Uchibori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode, its fabrication method and semiconductor device
- Patent number 5,747,878
- Issue date May 5, 1998
- Sony Corporation
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having copper layer
- Patent number 5,744,394
- Issue date Apr 28, 1998
- Sharp Kabushiki Kaisha
- Katsuji Iguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
II-VI group compound semiconductor device metallic nitride ohmic co...
- Patent number 5,587,609
- Issue date Dec 24, 1996
- Sharp Kabushiki Kaisha
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR INTERCONNECTION
- Publication number 20110121459
- Publication date May 26, 2011
- Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR INTERCONNECTIONS
- Publication number 20080014743
- Publication date Jan 17, 2008
- Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR SEMICONDUCTOR INTERCONNECTIONS
- Publication number 20070218690
- Publication date Sep 20, 2007
- Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
- Takashi Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting element and production method thereof
- Publication number 20070210320
- Publication date Sep 13, 2007
- Toyoda Gosei Co., Ltd.
- Yuhei Ikemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode for p-type SiC
- Publication number 20060169985
- Publication date Aug 3, 2006
- TOYODA GOSEI CO., LTD
- Tomohiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060065898
- Publication date Mar 30, 2006
- TOYODA GOSEI CO., LTD
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED STRUCTURE FOR FABRICATING AN OHMIC ELECTRODE AND OHMI...
- Publication number 20040238891
- Publication date Dec 2, 2004
- MITSUHIRO NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group lll nitride compound semiconductor device and method for form...
- Publication number 20040222499
- Publication date Nov 11, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wiring structure for semiconductor device
- Publication number 20040183201
- Publication date Sep 23, 2004
- Toyoda Gosei Co., Ltd.
- Masahiro Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode for p-type Group III nitride compound semiconductor and m...
- Publication number 20040130025
- Publication date Jul 8, 2004
- TOYODA GOSEI CO., LTD
- Ippei Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
n-Electrode for III group nitride based compound semiconductor element
- Publication number 20040026701
- Publication date Feb 12, 2004
- Shunsuke Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode for p-type sic
- Publication number 20040016929
- Publication date Jan 29, 2004
- Osamu Nakatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III nitride compound semiconductor element an electrode forming method
- Publication number 20030155575
- Publication date Aug 21, 2003
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN related compound semiconductor and process for producing the same
- Publication number 20020072204
- Publication date Jun 13, 2002
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing GaN related compound semiconductor
- Publication number 20010018226
- Publication date Aug 30, 2001
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS

Masanori Murakami

Person

Patents Grantslast 30 patents

n-Electrode for III group nitride based compound semiconductor element

Method of fabricating semiconductor interconnections

Light emitting element and production method thereof

Electrode for p-type SiC

Semiconductor device having an undercoat layer and method of manufa...

Fabrication method for semiconductor interconnections

Electrode for p-type Group III nitride compound semiconductor layer...

Wiring structure for semiconductor device

Group III nitride compound semiconductor device and method for form...

Electrode for p-type SiC

III nitride compound semiconductor element an electrode forming method

GaN related compound semiconductor and process for producing the same

Process for producing GaN related compound semiconductor

Ohmic electrode, method of manufacturing the same and semiconductor...

Ohmic electrode, method and multi-layered structure for making same

GaN related compound semiconductor light-emitting device

Method for making II-VI group compound semiconductor device

Ohmic electrode, its fabricating method and semiconductor device

Multi-layered structure for ohmic electrode fabrication

Semiconductor device having a copper wiring layer formed on a base...

Method for fabricating ohmic electrode and multi-layered structure...

Methods of forming electrodes on gallium nitride group compound sem...

II-VI group compound semiconductor device and method for manufactur...

II-VI group compound semiconductor device

Method for fabricating ohmic electrode and multi-layered structure...

Ohmic electrode, its fabrication method and semiconductor device

Method for fabricating a semiconductor device having copper layer

II-VI group compound semiconductor device metallic nitride ohmic co...

Patents Applicationslast 30 patents

SEMICONDUCTOR INTERCONNECTION

METHOD OF FABRICATING SEMICONDUCTOR INTERCONNECTIONS

FABRICATION METHOD FOR SEMICONDUCTOR INTERCONNECTIONS

Light emitting element and production method thereof

Electrode for p-type SiC

Semiconductor device and method of manufacturing the same

MULTI-LAYERED STRUCTURE FOR FABRICATING AN OHMIC ELECTRODE AND OHMI...

Group lll nitride compound semiconductor device and method for form...

Wiring structure for semiconductor device

Electrode for p-type Group III nitride compound semiconductor and m...

n-Electrode for III group nitride based compound semiconductor element

Electrode for p-type sic

III nitride compound semiconductor element an electrode forming method

GaN related compound semiconductor and process for producing the same

Process for producing GaN related compound semiconductor