Masaru Saito

Person

Nagano, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device, switching power supply control IC, and switch...
- Patent number 11,276,683
- Issue date Mar 15, 2022
- Fuji Electric Co., Ltd.
- Masaru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance element and manufacturing method of resistance element
- Patent number 11,189,685
- Issue date Nov 30, 2021
- Fuji Electric Co., Ltd.
- Masaru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy element and method of examining defect of resistive element
- Patent number 11,114,351
- Issue date Sep 7, 2021
- Fuji Electric Co., Ltd.
- Osamu Sasaki
- G01 - MEASURING TESTING
Information Patent Grant
Resistive element and method of manufacturing the resistive element
- Patent number 10,727,180
- Issue date Jul 28, 2020
- Fuji Electric Co., Ltd.
- Taichi Karino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated device and gate screening test method of t...
- Patent number 10,725,087
- Issue date Jul 28, 2020
- Fuji Electric Co., Ltd.
- Takahiro Mori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Resistive element
- Patent number 10,388,717
- Issue date Aug 20, 2019
- Fuji Electric Co., Ltd.
- Masaru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor circuit device
- Patent number 10,325,905
- Issue date Jun 18, 2019
- Fuji Electric Co., Ltd.
- Masaru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, control IC for switching power supply, and sw...
- Patent number 10,083,953
- Issue date Sep 25, 2018
- Fuji Electric Co., Ltd.
- Masaru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,711,659
- Issue date Jul 18, 2017
- Fuji Electric Co., Ltd.
- Taichi Karino
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device with serially and spirally connected diodes
- Patent number 9,667,242
- Issue date May 30, 2017
- Fuji Electric Co., Ltd.
- Masaru Saito
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 9,660,014
- Issue date May 23, 2017
- Fuji Electric Co., Ltd.
- Masaru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor, integrated circuit for switching...
- Patent number 9,461,115
- Issue date Oct 4, 2016
- Fuji Electric Co., Ltd.
- Masaru Saito
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device, integrated circuit including the semiconducto...
- Patent number 8,860,145
- Issue date Oct 14, 2014
- Fuji Electric Co., Ltd.
- Masaru Saito
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device, integrated circuit including the semiconducto...
- Patent number 8,680,622
- Issue date Mar 25, 2014
- Fuji Electric Co., Ltd.
- Masaru Saito
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Junction field effect transistor, integrated circuit for switching...
- Patent number 8,283,705
- Issue date Oct 9, 2012
- Fuji Electric Co., Ltd.
- Masaru Saito
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Junction field effect transistor, integrated circuit for switching...
- Patent number 7,982,248
- Issue date Jul 19, 2011
- Fuji Electric Systems Co., Ltd.
- Masaru Saito
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device exhibiting a high breakdown voltage and the me...
- Patent number 7,687,385
- Issue date Mar 30, 2010
- Fuji Electric Holdings Co., Ltd.
- Kazuo Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device exhibiting a high breakdown voltage and the me...
- Patent number 7,195,980
- Issue date Mar 27, 2007
- Fuji Electric Co., Ltd.
- Kazuo Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device exhibiting a high breakdown voltage and the me...
- Patent number 6,853,034
- Issue date Feb 8, 2005
- Fuji Electric Co., Ltd.
- Kazuo Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high breakdown voltage MOSFET and device provided therewith
- Patent number 6,844,598
- Issue date Jan 18, 2005
- Fuji Electric Co., Ltd.
- Gen Tada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral high breakdown voltage MOSFET and device provided therewith
- Patent number 6,818,954
- Issue date Nov 16, 2004
- Fuji Electric Co., Ltd.
- Gen Tada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High withstand voltage semiconductor device
- Patent number 6,740,952
- Issue date May 25, 2004
- Fuji Electric Co., Ltd.
- Naoto Fujishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS semiconductor device with low on resistance and high breakdown...
- Patent number 6,525,390
- Issue date Feb 25, 2003
- Fuji Electric Co., Ltd.
- Gen Tada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUMMY ELEMENT AND METHOD OF EXAMINING DEFECT OF RESISTIVE ELEMENT
- Publication number 20200051874
- Publication date Feb 13, 2020
- Fuji Electric Co., Ltd.
- Osamu SASAKI
- G01 - MEASURING TESTING
Information Patent Application
RESISTANCE ELEMENT AND MANUFACTURING METHOD OF RESISTANCE ELEMENT
- Publication number 20200044011
- Publication date Feb 6, 2020
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE ELEMENT
- Publication number 20190181216
- Publication date Jun 13, 2019
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE RESISTIVE ELEMENT
- Publication number 20190181089
- Publication date Jun 13, 2019
- Fuji Electric Co., Ltd.
- Taichi Karino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED DEVICE AND GATE SCREENING TEST METHOD OF T...
- Publication number 20180372791
- Publication date Dec 27, 2018
- Fuji Electric Co., Ltd.
- Takahiro MORI
- G05 - CONTROLLING REGULATING
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT DEVICE
- Publication number 20180366459
- Publication date Dec 20, 2018
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160276425
- Publication date Sep 22, 2016
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160133704
- Publication date May 12, 2016
- Fuji Electric Co., Ltd.
- Taichi KARINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160104724
- Publication date Apr 14, 2016
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SWITCHING POWER SUPPLY CONTROL IC, AND SWITCH...
- Publication number 20150311197
- Publication date Oct 29, 2015
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SEMICONDUCTOR DEVICE, CONTROL IC FOR SWITCHING POWER SUPPLY, AND SW...
- Publication number 20150228641
- Publication date Aug 13, 2015
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING...
- Publication number 20120319177
- Publication date Dec 20, 2012
- Fuji Electric Co., Ltd.
- Masaru SAITO
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING...
- Publication number 20110228575
- Publication date Sep 22, 2011
- Fuji Electric Systems Co., Ltd.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT INCLUDING THE SEMICONDUCTO...
- Publication number 20090323376
- Publication date Dec 31, 2009
- Fuji Electric Device Technology Co., LTD.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device, Integrated Circuit Including the Semiconducto...
- Publication number 20080117653
- Publication date May 22, 2008
- Fuji Electric Device Technology Co., LTD.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING...
- Publication number 20070221963
- Publication date Sep 27, 2007
- Fuji Electric Device Technology Co., LTD.
- Masaru SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE EXHIBITING A HIGH BREAKDOWN VOLTAGE AND THE ME...
- Publication number 20070155144
- Publication date Jul 5, 2007
- FUJI ELECTRIC HOLDING CO., LTD.
- Kazuo Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device exhibiting a high breakdown voltage and the me...
- Publication number 20050127439
- Publication date Jun 16, 2005
- Kazuo Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral high breakdown voltage MOSFET and device provided therewith
- Publication number 20040159856
- Publication date Aug 19, 2004
- Fuji Electric Co., Ltd.
- Gen Tada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral high breakdown voltage MOSFET and device provided therewith
- Publication number 20030122195
- Publication date Jul 3, 2003
- Fuji Electric Co., Ltd.
- Gen Tada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High withstand voltage semiconductor device
- Publication number 20020145172
- Publication date Oct 10, 2002
- Naoto Fujishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010048122
- Publication date Dec 6, 2001
- Gen Tada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device exhibiting a high breakdown voltage and the me...
- Publication number 20010038122
- Publication date Nov 8, 2001
- Kazuo Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS

Masaru Saito

Person

Patents Grantslast 30 patents

Semiconductor device, switching power supply control IC, and switch...

Resistance element and manufacturing method of resistance element

Dummy element and method of examining defect of resistive element

Resistive element and method of manufacturing the resistive element

Semiconductor integrated device and gate screening test method of t...

Resistive element

Semiconductor device and semiconductor circuit device

Semiconductor device, control IC for switching power supply, and sw...

Semiconductor device

Semiconductor device with serially and spirally connected diodes

Semiconductor device

Junction field effect transistor, integrated circuit for switching...

Semiconductor device, integrated circuit including the semiconducto...

Semiconductor device, integrated circuit including the semiconducto...

Junction field effect transistor, integrated circuit for switching...

Junction field effect transistor, integrated circuit for switching...

Semiconductor device exhibiting a high breakdown voltage and the me...

Semiconductor device exhibiting a high breakdown voltage and the me...

Semiconductor device exhibiting a high breakdown voltage and the me...

Lateral high breakdown voltage MOSFET and device provided therewith

Lateral high breakdown voltage MOSFET and device provided therewith

High withstand voltage semiconductor device

MIS semiconductor device with low on resistance and high breakdown...

Patents Applicationslast 30 patents

DUMMY ELEMENT AND METHOD OF EXAMINING DEFECT OF RESISTIVE ELEMENT

RESISTANCE ELEMENT AND MANUFACTURING METHOD OF RESISTANCE ELEMENT

RESISTIVE ELEMENT

RESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE RESISTIVE ELEMENT

SEMICONDUCTOR INTEGRATED DEVICE AND GATE SCREENING TEST METHOD OF T...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE, SWITCHING POWER SUPPLY CONTROL IC, AND SWITCH...

SEMICONDUCTOR DEVICE, CONTROL IC FOR SWITCHING POWER SUPPLY, AND SW...

JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING...

JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING...

SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT INCLUDING THE SEMICONDUCTO...

Semiconductor Device, Integrated Circuit Including the Semiconducto...

JUNCTION FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT FOR SWITCHING...

SEMICONDUCTOR DEVICE EXHIBITING A HIGH BREAKDOWN VOLTAGE AND THE ME...

Semiconductor device exhibiting a high breakdown voltage and the me...

Lateral high breakdown voltage MOSFET and device provided therewith

Lateral high breakdown voltage MOSFET and device provided therewith

High withstand voltage semiconductor device

Semiconductor device

Semiconductor device exhibiting a high breakdown voltage and the me...