Masashi Shima

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,865,734
- Issue date Jan 9, 2018
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,577,098
- Issue date Feb 21, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,401,427
- Issue date Jul 26, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 9,123,742
- Issue date Sep 1, 2015
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,112,027
- Issue date Aug 18, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,987,106
- Issue date Mar 24, 2015
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,853,673
- Issue date Oct 7, 2014
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 8,846,478
- Issue date Sep 30, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having channel dose region and method for manu...
- Patent number 8,841,725
- Issue date Sep 23, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,741,724
- Issue date Jun 3, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture method of a high voltage MOS semiconductor device
- Patent number 8,735,254
- Issue date May 27, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,735,945
- Issue date May 27, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having stress/strain...
- Patent number 8,697,531
- Issue date Apr 15, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high voltage transistor
- Patent number 8,686,501
- Issue date Apr 1, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 8,674,437
- Issue date Mar 18, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high voltage transistor
- Patent number 8,633,075
- Issue date Jan 21, 2014
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,603,874
- Issue date Dec 10, 2013
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,552,511
- Issue date Oct 8, 2013
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 8,497,178
- Issue date Jul 30, 2013
- Fujitsu Semiconductor Limited
- Masashi Shima
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,466,450
- Issue date Jun 18, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Breakdown voltage MOS semiconductor device
- Patent number 8,410,550
- Issue date Apr 2, 2013
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,362,522
- Issue date Jan 29, 2013
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,329,528
- Issue date Dec 11, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and semiconductor integrated circuit device
- Patent number 8,222,701
- Issue date Jul 17, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 8,188,553
- Issue date May 29, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Grant
P-channel MOS transistor and fabrication process thereof
- Patent number 8,158,498
- Issue date Apr 17, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,143,675
- Issue date Mar 27, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having carrier mobility raised by generating s...
- Patent number 8,106,467
- Issue date Jan 31, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,080,845
- Issue date Dec 20, 2011
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and semiconductor integrated circuit device
- Patent number 8,072,031
- Issue date Dec 6, 2011
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20170117412
- Publication date Apr 27, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160308053
- Publication date Oct 20, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150295086
- Publication date Oct 15, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140361340
- Publication date Dec 11, 2014
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20140004673
- Publication date Jan 2, 2014
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20130248930
- Publication date Sep 26, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130241005
- Publication date Sep 19, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE TRANSISTOR
- Publication number 20130189820
- Publication date Jul 25, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130181288
- Publication date Jul 18, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130178036
- Publication date Jul 11, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130178032
- Publication date Jul 11, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD
- Publication number 20130171791
- Publication date Jul 4, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120214287
- Publication date Aug 23, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20120208354
- Publication date Aug 16, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- A23 - FOODS OR FOODSTUFFS THEIR TREATMENT, NOT COVERED BY OTHER CLASSES
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20120208336
- Publication date Aug 16, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20120149188
- Publication date Jun 14, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120132964
- Publication date May 31, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL MOS TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
- Publication number 20120038001
- Publication date Feb 16, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120007147
- Publication date Jan 12, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110233687
- Publication date Sep 29, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20110221000
- Publication date Sep 15, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110133273
- Publication date Jun 9, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE TRANSISTOR
- Publication number 20110108917
- Publication date May 12, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20100301394
- Publication date Dec 2, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD
- Publication number 20100244965
- Publication date Sep 30, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MISFET, SEMICONDUCTOR DEVICE HAVING THE MISFET AND METHOD FOR MANUF...
- Publication number 20100237445
- Publication date Sep 23, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20100240177
- Publication date Sep 23, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100102365
- Publication date Apr 29, 2010
- Fujitsu Microelectronics Limited
- Masashi SHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090321824
- Publication date Dec 31, 2009
- Fujitsu Microelectronics Limited
- Masashi SHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090309166
- Publication date Dec 17, 2009
- Fujitsu Microelectronics Limited
- Masashi SHIMA
- H01 - BASIC ELECTRIC ELEMENTS

Masashi Shima

Person

Patents Grantslast 30 patents

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device and fabrication method thereof

Semiconductor device manufacturing method

Semiconductor device and fabrication method thereof

Manufacturing method of semiconductor device

Semiconductor device having channel dose region and method for manu...

Method of manufacturing semiconductor device

Manufacture method of a high voltage MOS semiconductor device

Semiconductor device

Method for fabricating a semiconductor device having stress/strain...

Semiconductor device with high voltage transistor

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device with high voltage transistor

Method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method for making the same

Semiconductor device and fabrication method thereof

Breakdown voltage MOS semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

P-channel MOS transistor and semiconductor integrated circuit device

Semiconductor device and method for making the same

P-channel MOS transistor and fabrication process thereof

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device having carrier mobility raised by generating s...

Semiconductor device

P-channel MOS transistor and semiconductor integrated circuit device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

P-CHANNEL MOS TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH HIGH VOLTAGE TRANSISTOR

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD

MISFET, SEMICONDUCTOR DEVICE HAVING THE MISFET AND METHOD FOR MANUF...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE