Masatomo Shibata

Person

Hitachi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride crystal substrate having a diameter of 4 inches o...
- Patent number 11,718,927
- Issue date Aug 8, 2023
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride laminated substrate and semiconductor device
- Patent number 10,998,188
- Issue date May 4, 2021
- HOSEI UNIVERSITY
- Tomoyoshi Mishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor substrate, semiconductor laminate, laminated...
- Patent number 10,978,296
- Issue date Apr 13, 2021
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal substrate
- Patent number 10,584,031
- Issue date Mar 10, 2020
- SCIOCS COMPANY LIMITED
- Takehiro Yoshida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing group-III nitride semiconductor crystal su...
- Patent number 10,309,036
- Issue date Jun 4, 2019
- Osaka University
- Yusuke Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group-III nitride substrate and group-III...
- Patent number 10,290,489
- Issue date May 14, 2019
- Sciocs Company Limited
- Toshio Kitamura
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for producing group-III nitride crystal, group-III nitride c...
- Patent number 10,266,965
- Issue date Apr 23, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride crystal substrate and substrate fo...
- Patent number 10,260,165
- Issue date Apr 16, 2019
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing method
- Patent number 10,253,432
- Issue date Apr 9, 2019
- Sumitomo Chemical Company, Limited
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor single crystal substrate manufacturing method
- Patent number 10,100,434
- Issue date Oct 16, 2018
- Sumitomo Chemical Company, Limited
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor substrate, substrate for group III...
- Patent number 8,207,054
- Issue date Jun 26, 2012
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single-crystal substrate and method for producing GaN single cr...
- Patent number 8,101,939
- Issue date Jan 24, 2012
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-V nitride-based semiconductor substrate, group III-V nitr...
- Patent number 7,981,713
- Issue date Jul 19, 2011
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V nitride semiconductor substrate and its production method
- Patent number 7,935,615
- Issue date May 3, 2011
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III-V nitride-based semiconductor substrate and group III-V n...
- Patent number 7,847,313
- Issue date Dec 7, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Porous substrate and its manufacturing method, and gan semiconducto...
- Patent number 7,829,913
- Issue date Nov 9, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V group nitride system semiconductor self-standing substrate, m...
- Patent number 7,790,489
- Issue date Sep 7, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III group nitride semiconductor substrate, substrate for group III...
- Patent number 7,674,699
- Issue date Mar 9, 2010
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor substrate
- Patent number 7,622,791
- Issue date Nov 24, 2009
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor self-standing substrate, m...
- Patent number 7,435,608
- Issue date Oct 14, 2008
- Hitachi Cable, Ltd.
- Masatomo Shibata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-V nitride semiconductor substrate and its production method
- Patent number 7,288,830
- Issue date Oct 30, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor substrate
- Patent number 7,276,779
- Issue date Oct 2, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V nitride-based semiconductor substrate and method of mak...
- Patent number 7,271,404
- Issue date Sep 18, 2007
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor self-standing substrate, m...
- Patent number 7,253,499
- Issue date Aug 7, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor self-standing substrate, m...
- Patent number 7,230,282
- Issue date Jun 12, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown nitride-based compound semiconductor crystal subs...
- Patent number 7,196,399
- Issue date Mar 27, 2007
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor substrate and its manufacturing method
- Patent number 7,189,588
- Issue date Mar 13, 2007
- NEC Corporation
- Akira Usui
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Porous substrate for epitaxial growth, method for manufacturing sam...
- Patent number 7,118,934
- Issue date Oct 10, 2006
- Hitachi Cable, Ltd.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride based semiconductor substrate and process for man...
- Patent number 7,097,920
- Issue date Aug 29, 2006
- NEC Corporation
- Akira Usui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V group nitride system semiconductor substrate
- Patent number 7,057,204
- Issue date Jun 6, 2006
- Hitachi Cable, Ltd.
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240376636
- Publication date Nov 14, 2024
- Sumitomo Chemical Company, Limited
- Takashi SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20190348276
- Publication date Nov 14, 2019
- Hosei University
- Tomoyoshi MISHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING CRYSTAL SUBSTRATE AND CRYSTAL SUBSTRATE
- Publication number 20190292682
- Publication date Sep 26, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, LAMINATED...
- Publication number 20190198312
- Publication date Jun 27, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE CRYSTAL SUBSTRATE
- Publication number 20190119112
- Publication date Apr 25, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD FOR MANUFACTURING GROUP-III NITRIDE SUBSTRATE AND GROUP-III...
- Publication number 20180114692
- Publication date Apr 26, 2018
- SCIOCS Company Limited
- Toshio KITAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...
- Publication number 20180038010
- Publication date Feb 8, 2018
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...
- Publication number 20170314157
- Publication date Nov 2, 2017
- Osaka University
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...
- Publication number 20170191186
- Publication date Jul 6, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...
- Publication number 20170073839
- Publication date Mar 16, 2017
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE MANUFACTURING METHOD
- Publication number 20170067182
- Publication date Mar 9, 2017
- Sumitomo Chemical Company, Limited
- Masatomo SHIBATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD
- Publication number 20170009378
- Publication date Jan 12, 2017
- Sumitomo Chemical Company, Limited
- Masatomo SHIBATA
- C30 - CRYSTAL GROWTH
Information Patent Application
EQUIPMENT AND METHOD FOR PRODUCING CRYSTAL BY VERTICAL BOAT METHOD
- Publication number 20140109825
- Publication date Apr 24, 2014
- Hitachi Metals, Ltd.
- Hiroshi SASABE
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR GROUP III...
- Publication number 20090289330
- Publication date Nov 26, 2009
- HITACHI CABLE, LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III-V NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, GROUP III-V NITR...
- Publication number 20090098677
- Publication date Apr 16, 2009
- HITACHI CABLE, LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN single-crystal substrate and method for producing GaN single cr...
- Publication number 20090090917
- Publication date Apr 9, 2009
- Hitachi Cable, Ltd.
- Yuichi Oshima
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride-based semiconductor substrate and group III-V n...
- Publication number 20080042160
- Publication date Feb 21, 2008
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION METHOD
- Publication number 20080014723
- Publication date Jan 17, 2008
- HITACHI CABLE LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V group nitride system semiconductor substrate
- Publication number 20080001174
- Publication date Jan 3, 2008
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride-based semiconductor substrate, group III-V nitr...
- Publication number 20070221954
- Publication date Sep 27, 2007
- HITACHI CABLE, LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride-based semiconductor substrate and method of fab...
- Publication number 20070215901
- Publication date Sep 20, 2007
- HITACHI CABLE, LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V group nitride system semiconductor self-standing substrate, m...
- Publication number 20070212803
- Publication date Sep 13, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride-based group III-V semiconductor substrate and fabrication m...
- Publication number 20070176199
- Publication date Aug 2, 2007
- HITACHI CABLE, LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V nitride-based semiconductor substrate and method of mak...
- Publication number 20070051969
- Publication date Mar 8, 2007
- HITACHI CABLE, LTD.
- Yuichi Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V group nitride system semiconductor self-standing substrate, m...
- Publication number 20070040219
- Publication date Feb 22, 2007
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III group nitride semiconductor substrate, substrate for group III...
- Publication number 20060270200
- Publication date Nov 30, 2006
- HITACHI CABLE, LTD.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE BASED SEMICONDUCTOR SUBSTRATE AND PROCESS FOR MAN...
- Publication number 20060191467
- Publication date Aug 31, 2006
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride semiconductor substrate and its manufacturing method
- Publication number 20060046325
- Publication date Mar 2, 2006
- NEC Corporation
- Akira Usui
- C30 - CRYSTAL GROWTH
Information Patent Application
Porous substrate and its manufacturing method, and gan semiconducto...
- Publication number 20060046511
- Publication date Mar 2, 2006
- Masatomo Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III-V group nitride system semiconductor self-standing substrate, m...
- Publication number 20060033119
- Publication date Feb 16, 2006
- Hitachi Cable, Ltd.
- Masatomo Shibata
- C30 - CRYSTAL GROWTH

Masatomo Shibata

Person

Patents Grantslast 30 patents

Group III nitride crystal substrate having a diameter of 4 inches o...

Gallium nitride laminated substrate and semiconductor device

Nitride semiconductor substrate, semiconductor laminate, laminated...

Nitride crystal substrate

Method for manufacturing group-III nitride semiconductor crystal su...

Method for manufacturing group-III nitride substrate and group-III...

Method for producing group-III nitride crystal, group-III nitride c...

Method for manufacturing nitride crystal substrate and substrate fo...

Semiconductor substrate manufacturing method

Nitride semiconductor single crystal substrate manufacturing method

Group III nitride semiconductor substrate, substrate for group III...

GaN single-crystal substrate and method for producing GaN single cr...

Group III-V nitride-based semiconductor substrate, group III-V nitr...

III-V nitride semiconductor substrate and its production method

Group III-V nitride-based semiconductor substrate and group III-V n...

Porous substrate and its manufacturing method, and gan semiconducto...

III-V group nitride system semiconductor self-standing substrate, m...

III group nitride semiconductor substrate, substrate for group III...

III-V group nitride system semiconductor substrate

III-V group nitride system semiconductor self-standing substrate, m...

III-V nitride semiconductor substrate and its production method

III-V group nitride system semiconductor substrate

Group III-V nitride-based semiconductor substrate and method of mak...

III-V group nitride system semiconductor self-standing substrate, m...

III-V group nitride system semiconductor self-standing substrate, m...

Epitaxially grown nitride-based compound semiconductor crystal subs...

Group III nitride semiconductor substrate and its manufacturing method

Porous substrate for epitaxial growth, method for manufacturing sam...

Group III nitride based semiconductor substrate and process for man...

III-V group nitride system semiconductor substrate

Patents Applicationslast 30 patents

GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

GALLIUM NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING CRYSTAL SUBSTRATE AND CRYSTAL SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR LAMINATE, LAMINATED...

NITRIDE CRYSTAL SUBSTRATE

METHOD FOR MANUFACTURING GROUP-III NITRIDE SUBSTRATE AND GROUP-III...

METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SU...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...

METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FO...

METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE C...

NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE MANUFACTURING METHOD

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

EQUIPMENT AND METHOD FOR PRODUCING CRYSTAL BY VERTICAL BOAT METHOD

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR GROUP III...

GROUP III-V NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, GROUP III-V NITR...

GaN single-crystal substrate and method for producing GaN single cr...

Group III-V nitride-based semiconductor substrate and group III-V n...

III-V NITRIDE SEMICONDUCTOR SUBSTRATE AND ITS PRODUCTION METHOD

III-V group nitride system semiconductor substrate

Group III-V nitride-based semiconductor substrate, group III-V nitr...

Group III-V nitride-based semiconductor substrate and method of fab...

III-V group nitride system semiconductor self-standing substrate, m...

Nitride-based group III-V semiconductor substrate and fabrication m...

Group III-V nitride-based semiconductor substrate and method of mak...

III-V group nitride system semiconductor self-standing substrate, m...

III group nitride semiconductor substrate, substrate for group III...

GROUP III NITRIDE BASED SEMICONDUCTOR SUBSTRATE AND PROCESS FOR MAN...

Group III nitride semiconductor substrate and its manufacturing method

Porous substrate and its manufacturing method, and gan semiconducto...

III-V group nitride system semiconductor self-standing substrate, m...