Masayoshi Koike

Person

Aichi-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride semiconductor device and method for manufacturing...
- Patent number 9,142,619
- Issue date Sep 22, 2015
- El-Seed Corporation
- Tsukasa Kitano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating group III nitride compound semiconductors an...
- Patent number 7,560,725
- Issue date Jul 14, 2009
- Toyoda Gosei Co., Ltd
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating group III nitride compound semiconductors an...
- Patent number 7,491,984
- Issue date Feb 17, 2009
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a group III nitride compound semiconductor laser
- Patent number 7,186,579
- Issue date Mar 6, 2007
- Toyoda Gosei Co., Ltd.
- Takashi Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group-III nitride compound semiconductor,...
- Patent number 7,163,876
- Issue date Jan 16, 2007
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of III nitride compound semiconductor and III nit...
- Patent number 7,141,444
- Issue date Nov 28, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Group III nitride compound semiconductor
- Patent number 7,112,243
- Issue date Sep 26, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting device using group III nitride group compound semico...
- Patent number 7,084,421
- Issue date Aug 1, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using Group III nitride compound
- Patent number 7,045,829
- Issue date May 16, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride compound semiconductor and g...
- Patent number 6,979,584
- Issue date Dec 27, 2005
- Toyoda Gosei Co, Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a light-emitting device
- Patent number 6,962,828
- Issue date Nov 8, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor crystal producing method
- Patent number 6,946,370
- Issue date Sep 20, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting element
- Patent number 6,946,788
- Issue date Sep 20, 2005
- Toyoda Gosei Co., Ltd
- Yoshinobu Suehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing group III nitride compound semic...
- Patent number 6,897,138
- Issue date May 24, 2005
- Toyoda Gosei Co., Ltd.
- Hiroshi Watanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing group III nitride compound semiconductor
- Patent number 6,860,943
- Issue date Mar 1, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating group III nitride compound semiconductors a...
- Patent number 6,861,305
- Issue date Mar 1, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating Group III nitride compound semiconductor sub...
- Patent number 6,855,620
- Issue date Feb 15, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride compound semiconductor and g...
- Patent number 6,830,948
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,821,800
- Issue date Nov 23, 2004
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor laser
- Patent number 6,801,559
- Issue date Oct 5, 2004
- Toyoda Gosei Co., Ltd.
- Takashi Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor a...
- Patent number 6,790,279
- Issue date Sep 14, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor element and method for pro...
- Patent number 6,716,655
- Issue date Apr 6, 2004
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 6,679,947
- Issue date Jan 20, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor laser
- Patent number 6,680,957
- Issue date Jan 20, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitride compound
- Patent number 6,645,785
- Issue date Nov 11, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor a...
- Patent number 6,645,295
- Issue date Nov 11, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...
- Publication number 20130126907
- Publication date May 23, 2013
- EL-SEED Corporation
- Tsukasa Kitano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIght-emitting semiconductor device using group III nitrogen compound
- Publication number 20050224834
- Publication date Oct 13, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating group III nitride compound semiconductors an...
- Publication number 20050093099
- Publication date May 5, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor laser
- Publication number 20050032344
- Publication date Feb 10, 2005
- Toyoda Gosei Co., Ltd.
- Takashi Hatano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor crystal producing method
- Publication number 20040241966
- Publication date Dec 2, 2004
- Masayoshi Koike
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group-III nitride compound semiconductor,...
- Publication number 20040219702
- Publication date Nov 4, 2004
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor subst...
- Publication number 20040107891
- Publication date Jun 10, 2004
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method of lll nitride compound semiconductor substrate a...
- Publication number 20040048448
- Publication date Mar 11, 2004
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitride compound
- Publication number 20040018657
- Publication date Jan 29, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting semiconductor device using group III nitride compound
- Publication number 20030205718
- Publication date Nov 6, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor laser
- Publication number 20030169794
- Publication date Sep 11, 2003
- Toyoda Gosei Co., Ltd.
- Takashi Hatano
- B82 - NANO-TECHNOLOGY
Information Patent Application
Production method of III nitride compound semiconductor and III nit...
- Publication number 20030134446
- Publication date Jul 17, 2003
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting element
- Publication number 20030122478
- Publication date Jul 3, 2003
- Yoshinobu Suehiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20030124789
- Publication date Jul 3, 2003
- TOYODA GOSEI CO., LTD
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Production method of III nitride compound semiconductor and III nit...
- Publication number 20030119239
- Publication date Jun 26, 2003
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor and g...
- Publication number 20030092230
- Publication date May 15, 2003
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor and g...
- Publication number 20030092263
- Publication date May 15, 2003
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for producing group III nitride compound semiconductor
- Publication number 20030070607
- Publication date Apr 17, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITRIDE COMPOUND
- Publication number 20030057433
- Publication date Mar 27, 2003
- MASAYOSHI KOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor
- Publication number 20030027407
- Publication date Feb 6, 2003
- Masayoshi Koike
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride compound semiconductor device and group III nitri...
- Publication number 20030022028
- Publication date Jan 30, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor substrate
- Publication number 20030010281
- Publication date Jan 16, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for producing group III nitride compound semic...
- Publication number 20020197830
- Publication date Dec 26, 2002
- Hiroshi Watanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Group III nitride compound semiconductor element and method for pro...
- Publication number 20020197841
- Publication date Dec 26, 2002
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group III nitride compound semiconductor a...
- Publication number 20020179005
- Publication date Dec 5, 2002
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS

Masayoshi Koike

Person

Patents Grantslast 30 patents

Group III nitride semiconductor device and method for manufacturing...

Light-emitting semiconductor device using group III nitrogen compound

Method for fabricating group III nitride compound semiconductors an...

Method for fabricating group III nitride compound semiconductors an...

Light-emitting semiconductor device using group III nitrogen compound

Method for producing a group III nitride compound semiconductor laser

Method for manufacturing group-III nitride compound semiconductor,...

Production method of III nitride compound semiconductor and III nit...

Light-emitting semiconductor device using group III nitrogen compound

Method for producing Group III nitride compound semiconductor

Light-emitting device using group III nitride group compound semico...

Light-emitting semiconductor device using Group III nitride compound

Light-emitting aluminum gallium indium nitride compound semiconduct...

Method for producing group III nitride compound semiconductor and g...

Methods for manufacturing a light-emitting device

Semiconductor crystal producing method

Light-emitting element

Method and apparatus for producing group III nitride compound semic...

Method for producing group III nitride compound semiconductor

Methods for fabricating group III nitride compound semiconductors a...

Method for fabricating Group III nitride compound semiconductor sub...

Method for producing group III nitride compound semiconductor and g...

Semiconductor light-emitting device and manufacturing method thereof

Group III nitride compound semiconductor laser

Method for manufacturing group III nitride compound semiconductor a...

Group III nitride compound semiconductor element and method for pro...

Semiconductor substrate

Group III nitride compound semiconductor laser

Light-emitting semiconductor device using group III nitride compound

Method for manufacturing group III nitride compound semiconductor a...

Patents Applicationslast 30 patents

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING...

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

LIght-emitting semiconductor device using group III nitrogen compound

Method for fabricating group III nitride compound semiconductors an...

Group III nitride compound semiconductor laser

Semiconductor crystal producing method

Method for manufacturing group-III nitride compound semiconductor,...

Method for producing group III nitride compound semiconductor subst...

Production method of lll nitride compound semiconductor substrate a...

Light-emitting semiconductor device using group III nitride compound

Light-emitting semiconductor device using group III nitride compound

Group III nitride compound semiconductor laser

Production method of III nitride compound semiconductor and III nit...

Light-emitting element

Semiconductor light-emitting device and manufacturing method thereof

Production method of III nitride compound semiconductor and III nit...

Method for producing group III nitride compound semiconductor and g...

Method for producing group III nitride compound semiconductor and g...

Method for producing group III nitride compound semiconductor

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITRIDE COMPOUND

Method for producing group III nitride compound semiconductor

Group III nitride compound semiconductor device and group III nitri...

Semiconductor substrate

Method and apparatus for producing group III nitride compound semic...

Group III nitride compound semiconductor element and method for pro...

Method for manufacturing group III nitride compound semiconductor a...