Masayoshi Naito

Person

Katsuta, JP

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage thyristor with optimized doping, thickness, and sheet...
- Patent number 4,682,199
- Issue date Jul 21, 1987
- Hitachi, Ltd.
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET-bipolar switching device and circuit
- Patent number 4,604,535
- Issue date Aug 5, 1986
- Hitachi, Ltd.
- Takao Sasayama
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor devices of multi-emitter type
- Patent number 4,542,398
- Issue date Sep 17, 1985
- Hitachi, Ltd.
- Tsutomu Yatsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light activated semiconductor device
- Patent number 4,404,580
- Issue date Sep 13, 1983
- Hitachi, Ltd.
- Nobutake Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage semiconductor device
- Patent number 4,388,635
- Issue date Jun 14, 1983
- Hitachi, Ltd.
- Atsuo Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled thyristor with dual resistivity field layer
- Patent number 4,223,328
- Issue date Sep 16, 1980
- Hitachi, Ltd.
- Yoshio Terasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor having low on-state voltage with low areal doping emitter...
- Patent number 4,219,832
- Issue date Aug 26, 1980
- Hitachi, Ltd.
- Masayoshi Naito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon doped with cadmium to reduce lifetime
- Patent number 4,107,731
- Issue date Aug 15, 1978
- Hitachi, Ltd.
- Masayoshi Naito
- H01 - BASIC ELECTRIC ELEMENTS

Masayoshi Naito

Person

Patents Grantslast 30 patents

High voltage thyristor with optimized doping, thickness, and sheet...

FET-bipolar switching device and circuit

Semiconductor devices of multi-emitter type

Light activated semiconductor device

High breakdown voltage semiconductor device

Field controlled thyristor with dual resistivity field layer

Thyristor having low on-state voltage with low areal doping emitter...

Silicon doped with cadmium to reduce lifetime